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Patent # Description
US-9,646,849 Semiconductor device with nano-gaps and method for manufacturing the same
A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a substrate, a first capping layer formed above the...
US-9,646,848 Etching method, etching apparatus and storage medium
A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base...
US-9,646,847 Method for manufacturing array substrate, film-etching monitoring method and device
A method for manufacturing an array substrate, a film-etching monitoring and a film-etching monitoring device. The monitoring method comprises: monitoring and...
US-9,646,846 Method for producing a multilevel microelectronic structure
A method for producing a multilevel microelectronic structure includes formation of a first layer, production of at least one second layer at least partially...
US-9,646,845 Method of forming a mask for substrate patterning
Techniques herein include using acid-diffusion--controllable to specific diffusion lengths--to create sacrificial structures that, when removed, define a...
US-9,646,844 Method for forming stair-step structures
A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall...
US-9,646,843 Tunable magnetic field to improve uniformity
Implementations described herein provide a magnetic ring which enables both lateral and azimuthal tuning of the plasma in a processing chamber. In one...
US-9,646,842 Germanium smoothing and chemical mechanical planarization processes
Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is...
US-9,646,841 Group III arsenide material smoothing and chemical mechanical planarization processes
A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a...
US-9,646,840 Method for CMP of high-K metal gate structures
A method for manufacturing a semiconductor device includes providing a substrate containing a front-end device and forming a dielectric layer on the substrate....
US-9,646,839 Ta based ohmic contact
A method of forming an Ohmic contact including forming a Ta layer in a contact area of a barrier, forming a Ti layer on the first Ta layer, and forming an Al...
US-9,646,838 Method of forming a semiconductor structure including silicided and non-silicided circuit elements
A method includes providing a semiconductor structure including at least one first circuit element including a first semiconductor material and at least one...
US-9,646,837 Ion implantation method and ion implantation apparatus
An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing...
US-9,646,836 Semiconductor device manufacturing method
Provided is a semiconductor device manufacturing method such that miniaturization of a parallel p-n layer can be achieved, and on-state resistance can be...
US-9,646,835 Wafer structure for electronic integrated circuit manufacturing
A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device...
US-9,646,834 Method for manufacturing semiconductor device
There are prepared a semiconductor substrate having a first main surface and a second main surface, and an adhesive tape having a third main surface and a...
US-9,646,833 Forming patterned graphene layers
An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure on a substrate;...
US-9,646,832 Porous fin as compliant medium to form dislocation-free heteroepitaxial films
A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer...
US-9,646,831 Advanced excimer laser annealing for thin films
The present disclosure relates to a new generation of laser-crystallization approaches that can crystallize Si films for large displays at drastically increased...
US-9,646,830 Semiconductor structure and fabrication method thereof
According to a semiconductor structure fabrication method, a semiconductor substrate having gate structures is provided. Sidewalls of the gate structures may be...
US-9,646,829 Manufacturing method of semiconductor device
A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be...
US-9,646,828 Reacted particle deposition (RPD) method for forming a compound semi-conductor thin-film
A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw...
US-9,646,827 Method for smoothing surface of a substrate containing gallium and nitrogen
Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various...
US-9,646,826 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a...
US-9,646,825 Method for fabricating a composite structure to be separated by exfoliation
The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation...
US-9,646,824 Method for manufacturing semiconductor device
To form a MOSFET over a silicon carbide substrate, when a heat treatment accompanied by nitration is carried out to reduce the interface state density in the...
US-9,646,823 Semiconductor dielectric interface and gate stack
A semiconductor/dielectric interface having reduced interface trap density and a method of manufacturing the interface are disclosed. In an exemplary...
US-9,646,822 Active regions with compatible dielectric layers
A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure...
US-9,646,821 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes processing a substrate accommodated in a process container accommodated in a housing by supplying a...
US-9,646,820 Methods for forming conductive titanium oxide thin films
The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films...
US-9,646,819 Method for forming surface oxide layer on amorphous silicon
The invention provides a method for forming a surface oxide layer on an amorphous silicon including steps: using a HF acid to clean a surface of the amorphous...
US-9,646,818 Method of forming planar carbon layer by applying plasma power to a combination of hydrocarbon precursor and...
Aspects of the disclosure pertain to methods of forming planar amorphous carbon layers on patterned substrates. Layers formed according to embodiments outlined...
US-9,646,817 Semiconductor cleaner systems and methods
In an embodiment, the present invention discloses a EUV cleaner system and process for cleaning a EUV carrier. The euv cleaner system comprises separate dirty...
US-9,646,815 Integrated nanospray system
Integrated nanospray ionization package, comprising a nanospray emitter, a push button carriage with button element projecting through a bore in said package,...
US-9,646,814 Method and apparatus for reacting ions
A method of mass spectrometry is disclosed having a mode comprising: providing a source of precursor ions and reagent ions for reacting with said precursor...
US-9,646,813 Mass spectrometer
A mass spectrometer is disclosed comprising a first quadrupole rod set mass filter, a collision cell, an ion mobility spectrometer or separator, an ion guide or...
US-9,646,812 MALDI sample preparation methods and targets
The present invention is concerned with a method of preparing a MALDI sample, the method comprising the steps of: (a) mixing a solid sample precursor comprising...
US-9,646,811 Miniaturized ion mobility spectrometer
By utilizing the combination of a unique electronic ion injection control circuit in conjunction with a particularly designed drift cell construction, the...
US-9,646,810 Method for improving mass spectrum reproducibility and quantitative analysis method using same
Methods are described for improving reproducibility of mass spectrum and quantitative analysis method using the same. More particularly, methods for improving...
US-9,646,809 Intaglio printing plate coating apparatus
There is described an intaglio printing plate coating apparatus (1) comprising a vacuum chamber (3) having an inner space (30) adapted to receive at least one...
US-9,646,808 Cold plasma annular array methods and apparatus
Methods and apparatus are described that use an array of two or more cold plasma jet ports oriented to converge at a treatment area. The use of an array permits...
US-9,646,807 Sealing groove methods for semiconductor equipment
In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes...
US-9,646,806 Plasma electrode device and method for manufacturing the same
Provided are a plasma electrode device and a manufacturing method thereof. The plasma electrode device includes a first substrate including a first substrate...
US-9,646,805 Focused ion beam system and method of making focal adjustment of ion beam
A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a...
US-9,646,804 Method for calibration of a CD-SEM characterisation technique
A calibration method for a CD-SEM technique, includes determining a match function converting at least one parameter obtained by modelling a measurement...
US-9,646,803 Transmission electron microscopy supports and methods of making
A method of making a Transmission Electron Microscopy support comprising depositing a sacrificial layer to the top side of a lacey or holey carbon structure or...
US-9,646,802 Method and apparatus for electron beam lithography
Disclosed is an apparatus in a semiconductor lithography system. The apparatus comprises a multiplexer and a plurality of imaging elements. The plurality is...
US-9,646,801 Multilayer X-ray source target with high thermal conductivity
In various embodiments, a multi-layer X-ray source target is provided having two or more layers of target material at different depths and different...
US-9,646,800 Traveling wave tube system and control method of traveling wave tube
A traveling wave tube system includes a traveling wave tube, and a power supply device for supplying required power supply voltages to the respective electrodes...
US-9,646,799 Apparatus for sealing arc-tube
Provided is an apparatus for sealing an arc-tube including a jig body including an electrode pin hole into which an end part of the electrode pin inserted into...
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