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Patent # Description
US-9,666,698 Method for manufacturing semiconductor device
A transistor with stable electrical characteristics is provided. Provided is a method for manufacturing a semiconductor device that includes, over a substrate,...
US-9,666,696 Method of manufacturing a vertical junction field effect transistor
A method of manufacturing a vertical junction field effect transistor (JFET) includes forming a drain in a semiconductor substrate, forming a compound...
US-9,666,693 Structure and method to minimize junction capacitance in NANO sheets
A method of making a semiconductor device includes forming a nanosheet stack including a first layer and a second layer; patterning a gate stack on the...
US-9,666,691 Epitaxy profile engineering for FinFETs
A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the...
US-9,666,690 Integrated circuit and method for fabricating the same having a replacement gate structure
An integrated circuit includes a first replacement gate structure. The first replacement gate structure includes a layer of a first barrier material that is...
US-9,666,687 Method for forming semiconductor structure
The present invention provides a method for forming a semiconductor structure, at least including the following steps: first, four sacrificial patterns are...
US-9,666,686 MOS devices having epitaxy regions with reduced facets
An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the...
US-9,666,685 RF power transistor
A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain...
US-9,666,681 Silicon carbide semiconductor device and method for manufacturing same
A trench has first to third side surfaces respectively constituted of first to third semiconductor layers. A first side wall portion included in a first...
US-9,666,680 Flash cell and forming process thereof
A flash cell includes a gate and an erase gate. The gate is disposed on a substrate, wherein the gate includes a control gate on the substrate and a floating...
US-9,666,679 Transistor with a low-k sidewall spacer and method of making same
A transistor is formed by defining a gate stack on top of a semiconductor layer. The gate stack includes a gate dielectric and a gate electrode. A layer of a...
US-9,666,678 Semiconductor device and manufacturing method thereof
An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as...
US-9,666,677 Manufacturable thin film gallium and nitrogen containing devices
A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface...
US-9,666,676 Method for manufacturing a semiconductor device by exposing, to a hydrogen plasma atmosphere, a semiconductor...
A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an...
US-9,666,675 Graphene device and method of operating the same
A graphene device and a method of operating the same are provided. The graphene device includes: an active layer including a plurality of meta atoms spaced...
US-9,666,674 Formation of large scale single crystalline graphene
A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer...
US-9,666,673 Electronic device having carbon layer and method for manufacturing the same
According to one embodiment of the present invention, an electronic device includes: a carbon layer including graphene, a thin film layer formed on the carbon...
US-9,666,672 FinFET device
A device includes a first fin including a first semiconductor material. A first dielectric layer is disposed over a top surface of the first fin. A sidewall of...
US-9,666,671 Semiconductor device with composite drift region and related fabrication method
A device includes a semiconductor substrate, a body region in the semiconductor substrate having a first conductivity type and in which a channel is formed...
US-9,666,670 Method and structure of making enhanced UTBB FDSOI devices
An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of...
US-9,666,669 Superlattice lateral bipolar junction transistor
A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of...
US-9,666,668 Semiconductor device structure and method for forming the same
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a trench surrounding an active island of the...
US-9,666,667 Apparatuses and methods including a superjunction transistor
Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and...
US-9,666,664 Semiconductor device
An object is to achieve an increase in gain by reducing a current collapse, and reducing Cgd and Rg. A semiconductor device according to the present invention...
US-9,666,663 Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
First and second cell trench structures extend from a first surface into a semiconductor substrate. The first cell trench structure includes a first buried...
US-9,666,657 Display device having static electricity shielding member
A display device includes: a substrate; a static electricity shielding member formed on the substrate; a scan line formed on the substrate and transferring a...
US-9,666,650 Flexible display and manufacturing method thereof
Disclosed are a flexible display and a manufacturing method thereof. The flexible display includes a first flexible substrate, a pixel defining layer and a...
US-9,666,646 Light emitting element disposed in a display region of a substrate
A light-emitting device includes a light-emitting element disposed in a display region and including a first electrode, a second electrode, and a light-emitting...
US-9,666,645 Display device
A display device includes: a substrate; a first light emitting layer extending in a first direction along a column or a row of a plurality of sub-pixels...
US-9,666,642 Variable resistance memory device and method of driving the same
A variable resistance memory device and a driving method thereof are provided. The variable resistance memory device includes a base layer and a pillar-shaped...
US-9,666,640 High thermal budget magnetic memory
Semiconductor devices and methods for forming a semiconductor device are disclosed. The method includes forming a storage unit of a magnetic memory cell. A...
US-9,666,637 Integrated sensor chip package with directional light sensor, apparatus including such a package and method of...
Disclosed is an integrated sensor chip package comprising an integrated sensor chip enveloped in a packaging layer (30), the integrated circuit comprising a...
US-9,666,635 Fingerprint sensing circuit
Fingerprint sensing circuit packages and methods of making such packages may comprise a first substrate having a top side and a bottom side; the top side...
US-9,666,632 Solid-state imaging device, method of manufacturing the same, and electronic equipment
A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of...
US-9,666,631 Photodiode and filter configuration for high dynamic range image sensor
An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are...
US-9,666,628 Solid-state imaging device and method for manufacturing the same
A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part...
US-9,666,623 Imaging element, method for manufacturing imaging element, pixel design method, and electronic apparatus with...
An imaging element includes a plurality of pixels that are two-dimensionally arranged and each have a light receiving part including a photoelectric conversion...
US-9,666,622 Semiconductor integrated circuit device
Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide...
US-9,666,616 Image sensor, image processing system including the same, and portable electronic device including the same
An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first...
US-9,666,608 Array substrate and display device
An array substrate includes a first electrode located above a switching element through a first insulating film, a second electrode located above the first...
US-9,666,606 Semiconductor device and electronic device
Decrease of the output voltage of the logic circuit is inhibited by raising the gate voltage using a capacitor. In a first transistor, a drain and a gate are...
US-9,666,604 Display device
A display device includes a first pixel, a second pixel, a first substrate, and a second substrate. The first pixel includes a first pixel electrode, a first...
US-9,666,602 Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate
A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting...
US-9,666,600 Direct bandgap substrates and methods of making and using
An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can...
US-9,666,599 Display device having a multilayered undercoating layer of silicon oxide and silicon nitride
According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed...
US-9,666,598 Semiconductor device with an integrated heat sink array
An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more...
US-9,666,597 Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; a charge storage layer; a first conductor; a second...
US-9,666,596 Semiconductor memory device and method for manufacturing the same
According to one embodiment a semiconductor memory device includes a first stacked body, a pillar, a memory film, a capacitive element, a first wiring, and a...
US-9,666,595 Semiconductor memory device and method of manufacturing the same
A semiconductor memory device includes a first layer, a plurality of memory areas, a plurality of contact wires, a first shunt wire, and a second shunt wire....
US-9,666,592 Memory devices and methods of fabricating the same
A memory device includes a substrate having common source regions thereon, common source lines extending along a surface of the substrate and contacting the...
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