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Patent # Description
US-9,735,316 Method for manufacturing high voltage LED flip chip
A method for manufacturing a high voltage LED flip chip is provided, including: providing a substrate; forming an epitaxy stacking layer on the substrate;...
US-9,735,315 Semiconductor heterostructure with stress management
A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding...
US-9,735,314 Nitride semiconductor light emitting device
A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or...
US-9,735,313 Semiconductor light emitting device package and method for manufacturing the same
A method for manufacturing a semiconductor light emitting device package includes forming a light emitting structure including a first conductivity-type...
US-9,735,312 Semiconductor light emitting device and method of fabricating the same
A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the...
US-9,735,311 Method for producing semiconductor light receiving device
A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer including a light-receiving layer...
US-9,735,310 Damage-and-resist-free laser patterning of dielectric films on textured silicon
In accordance with embodiments disclosed herein, there are provided methods and systems for implementing damage-and-resist-free laser patterning of dielectric...
US-9,735,309 Monolithically integrated thin-film electronic conversion unit for lateral multijunction thin-film solar cells
An integrated thin-film lateral multi-junction solar device and fabrication method are provided. The device includes, for instance, a substrate, and a plurality...
US-9,735,308 Foil-based metallization of solar cells using removable protection layer
Approaches for foil-based metallization of solar cells are described. For example, a method of fabricating a solar cell involves placing a metal foil over a...
US-9,735,307 Method of manufacturing thin-film solar cell
A method of manufacturing a thin-film solar cell includes forming a first electrode on a substrate; forming a first petition groove for dividing the first...
US-9,735,306 Wustite-based photoelectrodes with lithium, hydrogen, sodium, magnesium, manganese, zinc and nickel additives
A photoelectrode, photovoltaic device and photoelectrochemical cell and methods of making are disclosed. The photoelectrode includes an electrode at least...
US-9,735,305 Monolithically integrated fluorescence on-chip sensor
After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop...
US-9,735,304 Photo detector systems and methods of operating same
A monolithic photo detector device disposed on a bulk substrate, comprising a photo detector disposed integrated in the bulk substrate including: (1) a p-type...
US-9,735,303 Color imaging using color OLED or LED array as color light-field imaging sensor
A color light field imaging sensor array for use as a lensless imaging camera, tactile or proximate gesture user interface, image display, or combination. Each...
US-9,735,302 Method for manufacturing photovoltaic cells with multiple junctions and multiple electrodes
A photovoltaic device and method of manufacture of a photovoltaic device including an assembly of at least two photovoltaic cells; and a lamination material...
US-9,735,301 Manufacture of N-type chalcogenide compositions and their uses in photovoltaic devices
A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to...
US-9,735,300 Thermal management
A solar energy receiver can include a heat sink configured to cool or otherwise dissipate heat. The heat sink can include a plurality of fin members, each...
US-9,735,299 Reactive conductive pressure-sensitive adhesive tape
A reactive pressure sensitive adhesive composition is disclosed. A tape formed using the reactive pressure sensitive adhesive is also disclosed. In its cured...
US-9,735,298 Backing sheet for photovoltaic modules
The present invention provides a protective backing sheet for photovoltaic modules. The backing sheet has a layer including fluoropolymer which is cured on a...
US-9,735,297 Method for preparing light absorption layer of copper-indium-gallium-sulfur-selenium thin film solar cells
A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum...
US-9,735,296 Semiconductor light receiving device
A semiconductor light receiving device includes a substrate, a semiconductor fine line waveguide provided on the substrate, and a light receiving circuit that...
US-9,735,295 Electrode having excellent light transmittance, method for manufacturing same, and electronic element including...
An electronic device with an electrode having a superior light transmittance and including a substrate, an amine group-containing compound layer formed on the...
US-9,735,294 Solar cell and manufacturing method thereof
A solar cell according to an embodiment includes a substrate; a barrier layer of a nano rod structure on the substrate; a back electrode layer disposed on the...
US-9,735,293 Solar cell element
This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, includes a semiconductor substrate in which a...
US-9,735,292 High-voltage gallium nitride schottky diode
A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first...
US-9,735,291 Semiconductor device and Zener diode
A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a...
US-9,735,290 Semiconductor device
An integrated diode (100) comprising a substrate (102); a Schottky cell (104) on the substrate (102); a heterojunction cell (106) on the substrate (102); a...
US-9,735,289 Ion implantation-assisted etch-back process for improving spacer shape and spacer width control
Disclosed herein is a semiconductor device including a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed...
US-9,735,288 One time programmable non-volatile memory device
A one-time programmable non-volatile memory device includes a first conductivity type well region located in a semiconductor substrate, a selection gate...
US-9,735,287 Memory devices, methods of manufacturing the same, and methods of accessing the same
Memory devices, methods of manufacturing the same, and methods of accessing the same are provided. In one embodiment, the memory device may include a substrate,...
US-9,735,286 Thin film transistor substrate having high reliability metal oxide semiconductor material
The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor...
US-9,735,285 Semiconductor device
An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current....
US-9,735,284 Semiconductor device comprising oxide semiconductor
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain...
US-9,735,283 Fabrication of IGZO oxide TFT on high CTE, low retardation polymer films for LDC-TFT applications
The present invention provides a TFT on a polymer substrate and a method for producing the TFT. The TFT is, due to its characteristics, particularly suited for...
US-9,735,282 Semiconductor device and display device having semiconductor device
Luminance variation due to change of current through a light-emitting element caused by change in environmental temperature is suppressed. Current through a...
US-9,735,281 Crystallization method for oxide semiconductor layer, semiconductor device manufactured using the same, and...
An oxide semiconductor crystallization method may include depositing an In--Ga--Zn oxide over the substrate while heating a substrate to a temperature of 200 to...
US-9,735,280 Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the...
US-9,735,279 Gas sensor and method of manufacturing the same
A gas sensor includes: a channel layer in which a F-terminated GNR, a H-terminated GNR, and a F-terminated GNR whose edge portions are terminated with different...
US-9,735,278 Array substrate, display panel and method of manufacturing thin film transistor
An array substrate, a display panel and a method of manufacturing a thin film transistor (TFT) are provided. The array substrate includes a base substrate and a...
US-9,735,277 Partially dielectric isolated fin-shaped field effect transistor (FinFET)
One embodiment provides a method comprising etching a fin of a fin-shaped field effect transistor (FinFET) to form a reduced fin, and laterally etching the...
US-9,735,276 Non-planar transistors and methods of fabrication thereof
Non-planar transistors and methods of fabrication thereof are described. In an embodiment, a method of forming a non-planar transistor includes forming a...
US-9,735,275 Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced...
A method includes removing a top portion of a substrate after implantation of a punch through stopper into the substrate; epitaxially growing undoped material...
US-9,735,274 Semiconductor device including a stacked wire structure
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a stacked wire structure formed over the substrate....
US-9,735,273 Method of forming a III-V compound semiconductor channel post replacement gate
After forming a sacrificial gate structure straddling a stacking of a semiconductor mandrel structure and a dielectric mandrel cap and spacers present on...
US-9,735,272 Method to controllably etch silicon recess for ultra shallow junctions
A method of forming a semiconductor device that includes forming a germanium including material on source and drain region portions of a silicon containing fin...
US-9,735,271 Semiconductor device
A semiconductor device includes an isolation feature in a substrate. The semiconductor device further includes a first source/drain feature in the substrate,...
US-9,735,269 Integrated strained stacked nanosheet FET
Transistors and methods of forming the same include forming a fin of alternating layers of a channel material and a sacrificial material. Stress liners are...
US-9,735,268 Method for forming metal semiconductor alloys in contact holes and trenches
A semiconductor device is provided that includes a gate structure on a channel region of a substrate. A source region and a drain region are present on opposing...
US-9,735,267 Structure and formation method of semiconductor device structure
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure at least...
US-9,735,266 Self-aligned contact for trench MOSFET
A trench metal oxide semiconductor field effect transistor (MOSFET) includes an epitaxial layer over a substrate a first trench in the epitaxial layer and a...
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