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Patent # Description
US-9,761,679 Performance optimized gate structures having memory device and logic device, the memory device with silicided...
A performance optimized CMOS FET structure and methods of manufacture are disclosed. The method includes forming source and drain regions for a first type...
US-9,761,678 Gallium arsenide heterojunction semiconductor structure
Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure...
US-9,761,677 Gate contact structure of FinFET
An embodiment includes a substrate, wherein a portion of the substrate extends upwards forming a fin, a gate dielectric over a top surface and at least portions...
US-9,761,676 Power semiconductor device with embedded field electrodes
A power semiconductor device is disclosed. The power semiconductor device includes an upper drift region situated over a lower drift region, a field electrode...
US-9,761,675 Resistive field structures for semiconductor devices and uses therof
The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular,...
US-9,761,673 Amorphous p-type oxide for a semiconductor device
A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu.sub.2O where x denotes a proportion by mole of AO and y...
US-9,761,672 Semiconductor component including aluminum silicon nitride layers
There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor...
US-9,761,671 Engineered substrates for use in crystalline-nitride based devices
A spalling process can be employed to generate a fracture at a predetermined depth within a high quality crystalline nitride substrate, such as a bulk GaN...
US-9,761,670 Semiconductor device composed of AlGaInN layers with inactive regions
A semiconductor device having: a substrate; a nitride semiconductor layer including a first semiconductor layer made of GaN or In.sub.xGa.sub.1-xN ...
US-9,761,669 Seed-mediated growth of patterned graphene nanoribbon arrays
Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays, and electronic and photonic devices incorporating the graphene nanoribbon arrays are...
US-9,761,668 Semiconductor device
A semiconductor device includes a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer which is formed on the...
US-9,761,667 Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure
A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate....
US-9,761,666 Strained channel field effect transistor
The present disclosure provides a semiconductor device with a strained SiGe channel and a method for fabricating such a device. In an embodiment, a...
US-9,761,665 Method of manufacturing an integrated circuit having field effect transistors including a peak in a body dopant...
An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second...
US-9,761,664 Integrated circuits with lateral bipolar transistors and methods for fabricating the same
Integrated circuits with lateral bipolar transistors and methods for fabricating the same are provided. An exemplary integrated circuit includes a semiconductor...
US-9,761,663 Semiconductor device
A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the...
US-9,761,662 Active area shapes reducing device size
Methods form structures to include a first pair of complementary transistors (having first and second transistors) and a second pair of complementary...
US-9,761,661 Stacked strained and strain-relaxed hexagonal nanowires
A method for forming nanowires includes forming a plurality of epitaxial layers on a substrate, the layers including alternating material layers with high and...
US-9,761,660 Manufacturable spin and spin-polaron interconnects
Manufacturable spin and spin-polaron interconnects are disclosed that do not exhibit the same increase in resistivity shown by Cu interconnects associated with...
US-9,761,659 Method of forming a semiconductor device having a conductor in a sidewall of the substrate
A semiconductor device and methods of formation are provided herein. A semiconductor device includes a conductor concentrically surrounding an insulator, and...
US-9,761,658 Shallow trench isolation structure with raised portion between active areas and manufacturing method thereof
A semiconductor structure includes a semiconductor substrate, a first active area, a second active area, a first trench, at least one raised portion, and a...
US-9,761,657 Metal-oxide-semiconductor transistor and method of forming gate layout
A metal-oxide-semiconductor transistor includes a substrate, a gate insulating layer disposed on the surface of the substrate layer, a metal gate disposed on...
US-9,761,656 Semiconductor device having buried region and method of fabricating same
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate,...
US-9,761,655 Stacked planar capacitors with scaled EOT
Stacked planar capacitor structures and methods of fabricating the same generally include stacking two or more capacitors with three electrodes by sharing a...
US-9,761,654 Display device
A display device includes a first substrate arranged with a plurality of pixels on a first surface, the plurality of pixels having a display element including a...
US-9,761,653 Electronic device including an organic optoelectronic component and an organic transistor
An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer...
US-9,761,652 Display apparatus having reduced signal distortion
A display apparatus includes a data line extending in a first direction, a main scan line disposed substantially parallel to the data line, a sub scan line...
US-9,761,651 Transparent organic light emitting display apparatus and method of manufacturing the same
A transparent organic light emitting display apparatus include a base substrate, a light blocking pattern disposed on the base substrate, a thin film transistor...
US-9,761,650 Thin-film transistor, method for manufacturing the same and display device comprising the same
A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film...
US-9,761,649 Thin film transistor array substrate, method of manufacturing the same, and organic light-emitting diode (OLED)...
A thin film transistor (TFT) array substrate is disclosed. In one aspect, the substrate includes a buffer layer formed over a substrate, a storage capacitor...
US-9,761,648 Image display apparatus
An image display apparatus includes: a first pixel circuit including a driving transistor that drives a light emitting element and includes a gate electrode on...
US-9,761,647 Organic light emitting display device and method of manufacturing the same
An organic light emitting display and a method of manufacturing the same. The organic light-emitting display is a transparent display where one can see through...
US-9,761,646 Organic light-emitting diode display
An organic light-emitting diode display is disclosed. The display includes a semiconductor layer formed over a substrate, a scan line formed over the...
US-9,761,645 Luminescent device having light emitting element and transistor
In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as...
US-9,761,644 Organic electroluminescent device and repairing method thereof
An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a...
US-9,761,643 Hybrid display assembly including a solar cell
Assembly for the display of at least one piece of information for a portable object, this display assembly (1) including a first, at least partially...
US-9,761,642 Transflective OLED display
A display includes first and second substrates spaced apart from one another, an organic light emitting diode (OLED) structure supported by the first substrate,...
US-9,761,641 Color filter substrate and method for manufacturing the same, OLED display panel and display apparatus
Embodiments of the present invention disclose a color filter substrate including: a base plate, and a black matrix layer and a barrier pad layer disposed...
US-9,761,640 Display panel
A display panel is disclosed. The display panel includes a substrate, a plurality of first unit pixel and a plurality of second unit pixel. The substrate...
US-9,761,639 Organic light emitting diode array substrate, and display device
The present invention provides an organic light emitting diode array substrate, and a display device, which belongs to the field of display technology, and can...
US-9,761,638 Organic EL display panel, display device using same, and method for producing organic EL display panel
An organic EL display panel includes: a first pixel electrode and a red organic light-emitting layer sequentially disposed in red subpixel region; a second...
US-9,761,637 Display device
In one example embodiment, a display device for suppressing reflected light includes a driving circuit and a display region which includes a plurality of...
US-9,761,636 Image sensors including semiconductor channel patterns
The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer...
US-9,761,635 Selector device for two-terminal memory
Disclosed is a solid state memory having a non-linear current-voltage (I-V) response. By way of example, the solid state memory can be used as a selector...
US-9,761,634 Electronic device
This patent document provides an electronic device capable of improving the characteristics of a variable resistance element. An electronic device in accordance...
US-9,761,633 Method for etching MTJ using co process chemistries
A method for fabricating a magnetic film structure is provided. The method comprises forming a magnetic structure on a bottom electrode layer, the magnetic...
US-9,761,632 Display substrate and method of manufacturing the same, and display device
Embodiments of the present invention disclose a display substrate and a method of manufacturing the same, and a display device comprising the display substrate....
US-9,761,631 Radiation image sensor
A radiation image sensor includes a charge generation section and, a circuit board accumulating and transferring charge generated in the charge generation...
US-9,761,630 Method for manufacturing image pickup module
The present invention achieves reduction in size and thickness while removing the cause of defective image and the like. According to an image pickup module...
US-9,761,629 Image sensor device and method
A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first ...
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