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Patent # Description
US-9,768,031 Semiconductor device manufacturing methods
Semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming a first pattern...
US-9,768,030 Method for forming tunnel MOSFET with ferroelectric gate stack
A Tunnel Field-Effect Transistor (TFET) includes a source region in a semiconductor substrate, and a drain region in the semiconductor substrate. The source...
US-9,768,029 Method of forming a semiconductor structure
A method of forming a semiconductor device is disclosed. A substrate having a dielectric layer thereon is provided. The dielectric layer has a gate trench...
US-9,768,028 Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of...
Disclosed are methods that employ a mask with openings arranged in a pattern of elongated trenches and holes of varying widths to achieve a linearly graded...
US-9,768,027 FinFET having controlled dielectric region height
Embodiments are directed to a method of forming a dielectric region of a fin-type field effect transistor (FinFET). The method includes forming at least one...
US-9,768,026 Structures having isolated graphene layers with a reduced dimension
Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a...
US-9,768,025 Semiconductor device and method of fabricating the same
A method of fabricating a semiconductor device includes forming a target layer on a substrate, forming a plurality of reference patterns at uniform intervals on...
US-9,768,024 Multi-layer mask and method of forming same
A method includes forming a first insulating layer over a substrate, the first insulating layer having a non-planar top surface, the first insulating layer...
US-9,768,023 Method for structuring a substrate
According to various embodiments, a method of processing a substrate may include: disposing a viscous material over a substrate including at least one...
US-9,768,022 Advanced cross-linkable layer over a substrate
A lithography method is provided in accordance with some embodiments. The lithography method includes providing a substrate, forming a crosslinked layer over...
US-9,768,021 Methods of forming semiconductor device structures including metal oxide structures
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for...
US-9,768,020 Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with...
A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit...
US-9,768,019 Laser crystallization method
A laser crystallization method includes forming a plurality of first protrusions and depressions on a surface of an amorphous silicon layer, wherein a first...
US-9,768,018 Semiconductor devices and methods of fabricating the same
The inventive concepts provide semiconductor devices and methods of fabricating the same. According to the method, sub-stack structures having a predetermined...
US-9,768,017 Method of epitaxial structure formation in a semiconductor
The invention provides a method of epitaxial structure formation in a semiconductor, comprising: providing a substrate; performing a dry etch to form a first...
US-9,768,016 Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer...
US-9,768,015 Methods of forming CIGS films
Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes...
US-9,768,014 Wafer coating
Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask...
US-9,768,013 Apparatus and method for selective deposition
Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on...
US-9,768,012 Method for processing substrate and substrate processing apparatus
There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated;...
US-9,768,011 Substrate treatment method and substrate treatment apparatus
The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a...
US-9,768,010 Liquid treatment apparatus
A liquid treatment apparatus includes a substrate holder (21) that holds a substrate horizontally and rotates the substrate, a treatment liquid nozzle (82) that...
US-9,768,009 Systems and methods for arbitrary quadrupole transmission windowing
Systems and methods are provided for shaping an effective transmission window used to select precursor ions for a precursor mass range of a sequential windowed...
US-9,768,008 Ion trap mass spectrometer
An ion trap mass spectrometer including an ion trap analyzer, an ion packet injector, and an ion detector is disclosed, along with a method of mass...
US-9,768,007 Ion trap mass spectrometer
A novel MS-MS apparatus utilizing electrostatic traps is disclosed, along with an associated method of analysis. The apparatus may include a chromatograph, an...
US-9,768,006 Ion transfer tube flow and pumping system load
A mass spectrometer system can include an ion source, a vacuum chamber; a mass analyzer within the vacuum chamber, a transfer tube between the ion source and...
US-9,768,005 Electrospray ionizer for mass spectrometry of aerosol particles
A device and method are disclosed to apply ESI-based mass spectroscopy to submicrometer and nanometer scale aerosol particles. Unipolar ionization is utilized...
US-9,768,004 Systems, devices, and methods for connecting a chromatography system to a mass spectrometer
The invention provides interfaces between analytical instruments, e.g., between chromatography systems and mass spectrometers. In an exemplary embodiment, an...
US-9,768,003 Detector and slit configuration in an isotope ratio mass spectrometer
A method of configuring a Faraday detector in a mass spectrometer is described. The mass spectrometer defines a central ion beam axis, and the Faraday detector...
US-9,768,002 Parsing events during MS3 experiments
Systems and methods are provided for reducing the time period of a CID event of an MS.sup.3 experiment and making the overall fragmentation event more generic....
US-9,768,001 Compositions, methods, and kits for quantifying target analytes in a sample
A method of quantifying a target analyte by mass spectrometry includes obtaining a mass spectrometer signal comprising a first calibrator signal, comprising a...
US-9,768,000 Systems and methods for acquiring data for mass spectrometry images
Systems and methods are provided for maximizing the data acquired from a sample in a mass spectrometry imaging experiment. An ion source device is instructed to...
US-9,767,999 Refractory metal plates
A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as...
US-9,767,998 Sputtering target
A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive...
US-9,767,997 Plasma processing apparatus and operational method thereof
A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing...
US-9,767,996 Application of powered electrostatic faraday shield to recondition dielectric window in ICP plasmas
Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A...
US-9,767,995 Plasma treatment device and method for plasma treatment
A plasma treatment device having an electrode arrangement (3) for generating a plasma in a supplied gas stream. The electrode arrangement has at least one...
US-9,767,994 Shower plate sintered integrally with gas release hole member and method for manufacturing the same
A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to...
US-9,767,993 Plasma processing apparatus
This microwave plasma processing apparatus has, as a gas introduction mechanism for introducing a working gas inside a chamber (10), electrical discharge...
US-9,767,992 Microwave chemical processing reactor
A processing reactor includes a microwave energy source and a field-enhancing waveguide. The field-enhancing waveguide has a field-enhancing zone between a...
US-9,767,991 Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma...
For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the...
US-9,767,990 Apparatus for treating a gas in a conduit
Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a...
US-9,767,989 Methods of forming features
A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of...
US-9,767,988 Method of controlling the switched mode ion energy distribution system
Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary...
US-9,767,987 Method and system for modifying substrate relief features using ion implantation
A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the...
US-9,767,986 Scanning electron microscope and methods of inspecting and reviewing samples
A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or...
US-9,767,985 Device and method for optimizing diffusion section of electron beam
Provided is a device for optimizing a diffusion section of an electron beam, comprising two groups of permanent magnets, a magnetic field formed by the four...
US-9,767,984 Chicane blanker assemblies for charged particle beam systems and methods of using the same
A chicane blanker assembly for a charged particle beam system includes an entrance and an exit, at least one neutrals blocking structure, a plurality of chicane...
US-9,767,983 Rotary X-ray anode and production method
A rotary X-ray anode has a support body and a focal track formed on the support body. The support body and the focal track are produced as a composite by powder...
US-9,767,982 Multiple X-ray beam tube
A multiple X-ray beam X-ray source includes an anode structure and a cathode structure. The anode structure includes a plurality of liquid metal jets providing...
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