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Patent # Description
US-9,805,966 Wafer scale packaging
A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor...
US-9,805,965 Pixelated capacitance controlled ESC
Implementations described herein provide a chucking circuit for a pixilated electrostatic chuck which enables both lateral and azimuthal tuning of the RF...
US-9,805,964 System and method for multi-location zapping
A system for zapping a wafer, the system may include a pulse generation unit that is configured to generate (a) first zapping pulses for causing a breakdown in...
US-9,805,963 Electrostatic chuck with thermal choke
Apparatuses, systems, and techniques for providing enhanced electrostatic chucks are provided. Such apparatuses, systems, and techniques may include, for...
US-9,805,962 Substrate conveyance method, and substrate conveyance device
The purpose of the present invention is to accurately deal with a variety of processing conditions and variations thereof, and to improve total throughput by...
US-9,805,961 Transfer system
In a transfer system, at least one of a plurality of process apparatuses is connected to a station as a connected process apparatus. A station control unit...
US-9,805,960 Substrate conveyance method
When an edge of a wafer passes above a right sensor and a left sensor disposed in a conveyance route of the wafer to a substrate processing chamber, four edge...
US-9,805,959 Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface...
US-9,805,958 Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium
A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that...
US-9,805,957 Substrate processing apparatus, substrate processing method and computer-readable storage medium recording...
A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate...
US-9,805,956 Lead frame and a method of fabrication thereof
Disclosed is a method of manufacturing a lead frame, which comprises the steps of: providing an electrically-conductive base material having first and second...
US-9,805,955 Semiconductor package with multiple molding routing layers and a method of manufacturing the same
Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing...
US-9,805,954 Semiconductor device and manufacturing method thereof
A manufacturing method forms an oxide insulating layer and a first plasma etching treatment forms a depressed portion therein. A second plasma etching treatment...
US-9,805,953 Substrate separation apparatus for stacked body
A wedge-shaped jig (6) is inserted into a gap between a first substrate (21) and a second substrate (22) at a corner (221) of the second substrate (22) and...
US-9,805,952 Method for manufacturing semiconductor device
Provided are an oxide semiconductor layer in which the number of defects is reduced and a highly reliable semiconductor device including the oxide ...
US-9,805,951 Method of integration process for metal CMP
A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate. The substrate has an edge region...
US-9,805,950 Semiconductor device and method of manufacturing the same
A method of manufacturing a semiconductor device including: (a) forming a first insulation film on a semiconductor substrate; (b) forming a first coil on the...
US-9,805,949 High .kappa. gate stack on III-V compound semiconductors
A method of forming a high k gate stack on a surface of a III-V compound semiconductor, such GaAs, is provided. The method includes subjecting a III-V compound...
US-9,805,948 Selective etching process of a mask disposed on a silicon substrate
The method includes the steps of: a) providing a silicon substrate including a first portion covered by the mask made from a carbonaceous material and a second...
US-9,805,947 Electronic devices having semiconductor memory units and method for fabricating the same
The disclosed technology provides an electronic device and a fabrication method thereof. An electronic device according to an implementation of the disclosed...
US-9,805,946 Photoresist removal
Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the...
US-9,805,945 Etching method
Disclosed is a method for selectively etching a first region made of silicon oxide to a second region made of silicon nitride. The method includes: performing a...
US-9,805,944 Method of manufacturing silicon carbide semiconductor device
A p-type base region, n.sup.+-type source region, p.sup.+-type contact region, and n-type JFET region are formed on a front surface side of a silicon carbide...
US-9,805,943 Polymer for resist under layer film composition, resist under layer film composition, and patterning process
The invention provides a polymer for a resist under layer film composition, containing a repeating unit shown by the formula (1) and a repeating unit shown by...
US-9,805,942 Method of modifying epitaxial growth shape on source drain area of transistor
Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes...
US-9,805,941 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve...
US-9,805,940 Plasma processing apparatus and plasma processing method
A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has...
US-9,805,939 Dual endpoint detection for advanced phase shift and binary photomasks
The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical...
US-9,805,938 Substrate processing apparatus and substrate processing method
A substrate processing apparatus includes a rotating holder for a substrate, a first nozzle used to eject a jet flow, a second nozzle used to discharge a...
US-9,805,937 Method of manufacturing semiconductor device and semiconductor device
Reliability of a semiconductor device is improved. A power device includes: a semiconductor chip; a chip mounting part; a solder material electrically coupling...
US-9,805,936 Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for...
A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a...
US-9,805,935 Bottom source/drain silicidation for vertical field-effect transistor (FET)
A method for manufacturing a semiconductor device includes forming a first active region on a semiconductor substrate, forming a semiconductor layer on the...
US-9,805,934 Formation of contact/via hole with self-alignment
In a method for manufacturing a semiconductor device, a substrate is provided, and a dielectric layer is formed to cover the substrate. A recess portion is...
US-9,805,933 Vertical power transistor with deep floating termination regions
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
US-9,805,932 Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light
First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is...
US-9,805,931 Liquid immersion doping
Methods for processing of a workpiece are disclosed. A fluid that contains a desired dopant is prepared. The workpiece is immersed in this fluid, such that the...
US-9,805,930 Method of manufacturing nitride semiconductor device using laminated cap layers
A method of manufacturing a nitride semiconductor device is provided, comprising: forming, on a substrate, a first laminated body where a first nitride...
US-9,805,929 Method of forming fine patterns in a semiconductor device and method of manufacturing an electronic device
Methods of forming fine patterns having a width and a pitch in semiconductor devices may be used to form a semiconductor device or electronic device. The fine...
US-9,805,928 Low temperature nanowire growth on arbitrary substrates
The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a...
US-9,805,927 Nonvolatile semiconductor memory device
According to one embodiment, a nonvolatile semiconductor memory device includes a first structure having a first insulating layer, a semiconductor layer, and a...
US-9,805,926 Vibration resistant automotive front lighting lamp
A lamp for automotive front lighting and a vehicle headlight comprising the lamp are described, as well as a method of manufacturing the lamp. The lamp 10...
US-9,805,925 Electrodeless high intensity discharge lamp with field suppression probes
In electrodeless HID lamps the radio frequency (RF) source is separated from a lamp housing in which vessel containing plasma arc is mounted. This lamp housing...
US-9,805,924 High-intensity discharge lamp assembly and method
A lamp assembly including a housing defining an internal volume and a lamp positioned in the internal volume, the lamp including a first electrode and a second...
US-9,805,923 Mass separators, mass selective detectors, and methods for optimizing mass separation within mass selective...
Mass separators are provided that can include at least one electrode component having a surface, in one cross section, defining at least two runs associated via...
US-9,805,922 System and method for rapid evaporative ionization of liquid phase samples
According to some embodiments, systems and methods for rapid evaporation of liquid phase samples are provided. The method includes directing liquid samples to a...
US-9,805,921 Ambient infrared laser ablation mass spectrometry (AIRLAB-MS) with plume capture by continuous flow solvent probe
A new experimental setup for spatially resolved ambient infrared laser ablation mass spectrometry (AIRLAB-MS) that uses an infrared microscope with an...
US-9,805,920 Dynamic resolution correction of quadrupole mass analyser
A method of mass spectrometry is disclosed comprising automatically correcting the mass or mass to charge ratio resolution of a quadrupole mass filter or mass...
US-9,805,919 RF detector with double balanced linear mixer and corresponding method of operation
A RF detector is provided and includes LO and RF paths, a mixer and a filter. The LO path includes a first buffer and a sine-to-square wave converter. The first...
US-9,805,918 Plasma source
The invention relates to a plasma source (1) for depositing a coating onto a substrate (9), which is connectable to a power source (P) and includes: an...
US-9,805,917 Plasma processing method
In a plasma processing method, first processes and second processes are performed alternately. In each first process, a first gas is supplied into a processing...
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