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Patent # Description
US-9,859,592 Power storage apparatus and method of operating power storage apparatus
A battery chamber is formed inside a sealed container. A module battery and a charging/discharging path outside a battery are housed in the battery chamber. In...
US-9,859,590 Battery
A battery is provided. The battery includes a positive electrode; a negative electrode; a separator between the positive and negative electrodes; a polymeric...
US-9,859,585 Power storage device
To provide a sheet-like power storage device which can be curved or bent in at least one axis direction. A power storage device includes a power storage element...
US-9,859,570 Electronic apparatus and associated methods
An apparatus comprising an insulating substrate (101); at least two charge collectors (102, 103) spaced apart on the substrate (101) surface; a...
US-9,859,568 Fuel cell electrode and method for manufacturing membrane-electrode assembly using the same
The present invention provides a fuel cell electrode, which has increased physical and chemical durability, and a method for manufacturing a membrane-electrode...
US-9,859,551 Anode for secondary battery comprising additive for improving low-temperature characteristics, and secondary...
The present disclosure refers to an anode for a secondary battery that comprises a low-temperature additive, and an electrochemical device using the anode. More...
US-9,859,541 Rechargeable lithium battery and method of fabricating same
In an aspect, a rechargeable lithium battery that includes a positive electrode; negative electrode; a separator interposed between the positive electrode and...
US-9,859,539 Method for producing separator and device for producing separator
A method for producing a separator in accordance with an embodiment of the present invention includes: a removing step of removing both end parts of a separator...
US-9,859,536 Nonaqueous electrolyte battery including a sealed case, battery pack and storage battery apparatus
A nonaqueous electrolyte battery of the embodiment includes: an electrode group; a pair of electrode leads connected electrically to the positive electrode and...
US-9,859,534 Secondary battery
A thermal expansion coefficient of a battery case may be lower than those of an insulating film and a separator. Portions of the insulating film, which are held...
US-9,859,508 Condensed polycyclic aromatic compound and use thereof
[Problem] To provide: a novel compound which has high mobility and on/off ratio and is useful for organic electronic devices; and a method for producing the...
US-9,859,498 Organic light emitting device
An OLED comprising a hole-transporting layer and light-emitting layer wherein the hole-transporting layer comprises a hole-transporting polymer wherein no more...
US-9,859,497 Method for manufacturing a thin film consisting of a colloidal crystal infiltrated with the luminescent...
he present invention relates to a method for manufacturing thin films consisting of SiO.sub.2 spheres of 250 nm in diameter, packed in a simple cubic structure...
US-9,859,484 Light emitting apparatus
A ceramic insulating film (150) having a heat conducting property and a light reflecting property is formed on a front surface of a substrate (100), and a light...
US-9,859,474 Addition curable organopolysiloxane composition, and semiconductor package
An addition curable organopolysiloxane composition comprising (A) an organopolysiloxane having at least two alkenyl groups per molecule, (B) a silphenylene...
US-9,859,469 Light emitting diode for surface mount technology, method of manufacturing the same, and method of...
A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first...
US-9,859,464 Lighting emitting diode with light extracted from front and back sides of a lead frame
This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with...
US-9,859,446 Non-volatile semiconductor memory device
According to one embodiment, a non-volatile semiconductor memory device includes: a tunnel insulation film provided on a semiconductor substrate; a floating...
US-9,859,423 Hetero-channel FinFET
A hetero-channel FinFET device provides enhanced switching performance over a FinFET device having a silicon channel, and is easier to integrate into a...
US-9,859,393 Integrated circuit device and method of fabricating the same
A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact...
US-9,859,383 Schottky diode with reduced forward voltage
A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms...
US-9,859,338 Three-dimensional resistive memory
Provided is a three-dimensional resistive memory including a channel pillar, a first gate pillar, a first gate dielectric layer, first and second stacked...
US-9,859,334 Display apparatus
A display apparatus includes a protective layer, a substrate including a non-display area adjacent to a display area, and a sub-pixel in the display area and...
US-9,859,315 Radiation image-pickup device and radiation image-pickup display system
A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor used to...
US-9,859,312 Feedback capacitor formed by bonding-via in pixel level bond
An image sensor includes a photodiode disposed in a first semiconductor material, and the photodiode is positioned to absorb image light through the backside of...
US-9,859,298 Amorphous silicon layer in memory device which reduces neighboring word line interference
Techniques for fabricating a memory device which has reduced neighboring word line interference, and a corresponding memory device. The memory device comprises...
US-9,859,289 Non-volatile push-pull non-volatile memory cell having reduced operation disturb and process for manufacturing same
A non-volatile memory cell includes a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel and an...
US-9,859,288 Semiconductor devices including an air-gap and methods of manufacturing the same
A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating...
US-9,859,281 Dual FIN integration for electron and hole mobility enhancement
A technique for forming a semiconductor device is provided. Sacrificial mandrels are formed over a hardmask layer on a semiconductor layer. Spacers are formed...
US-9,859,256 Ink printed wire bonding
An integrated circuit package with improved reliability and methods for creating the same are disclosed. More specifically, integrated circuit packages are...
US-9,859,250 Substrate and the method to fabricate thereof
The present invention discloses a substrate where the lateral surface of the substrate is formed to expose at least one portion of a via(s) for circuit...
US-9,859,244 Chip alignment utilizing superomniphobic surface treatment of silicon die
Certain embodiments of the present disclosure provide a method for soldering a chip onto a surface. The method generally includes forming a bonding pad on the...
US-9,859,243 Electronic component package and electronic device including the same
An electronic component package includes an electronic component, a redistribution layer electrically connected to the electronic component and having terminal...
US-9,859,218 Selective surface modification of interconnect structures
Semiconductor structures including copper interconnect structures and methods include selective surface modification of copper by providing a ...
US-9,859,201 Wiring substrate, semiconductor device, and method for manufacturing wiring substrate
A wiring substrate includes a first wiring structure and a second wiring structure stacked thereon. The first wiring structure includes a first insulation layer...
US-9,859,194 Semiconductor device and method for manufacturing the same
A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106b of a semiconductor chip 106, and a second insulating...
US-9,859,190 Resin structure, and electronic component and electronic device using the structure
Provided herein is a resin structure having high heat dissipation, and desirable adhesion at the interface with a heat generating device. The resin structure is...
US-9,859,176 Semiconductor device, test system and method of the same
A semiconductor device is disclosed. The semiconductor device includes: a System on Chip (SoC) die; an integrated passive device (IPD); and a first switch,...
US-9,859,171 Semiconductor device and method for manufacturing the same
A semiconductor device includes a first active region including at least one first recess; a second active region including at least one second recess; an...
US-9,859,166 Vertical field effect transistor having U-shaped top spacer
A method is presented for forming a semiconductor structure. The method includes forming a plurality of fins over a source/drain region, forming a first spacer...
US-9,859,157 Method for forming improved liner layer and semiconductor device including the same
A method for manufacturing a semiconductor device includes conformally depositing a liner layer on a top surface of a dielectric layer, and on sidewall and...
US-9,859,153 Deposition of aluminum oxide etch stop layers
Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5...
US-9,859,152 Protecting layer in a semiconductor structure
A method for forming a protecting layer includes determining an expected concentration of metal ions in a dielectric layer. The method also includes determining...
US-9,859,125 Block patterning method enabling merged space in SRAM with heterogeneous mandrel
Methodologies and a device for SRAM patterning are provided. Embodiments include forming a spacer layer over a fin channel, the fin channel being formed in four...
US-9,859,123 Method for fabricating semiconductor device
A method for fabricating a semiconductor device is disclosed. A substrate having a conductive region is provided. A metal layer is deposited on the conductive...
US-9,859,121 Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure
Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate...
US-9,859,112 Bonded semiconductor structures
A method is disclosed that includes the steps outlined below. An epitaxial layer is formed on a first semiconductor substrate. At least one implant species is...
US-9,859,108 Substrate regeneration method and regenerated substrate
Disclosed are a substrate regeneration method and a regenerated substrate. The substrate regeneration method comprises preparing a substrate having a surface...
US-9,859,096 Inspection apparatus and inspection method
An inspection apparatus according to an embodiment includes an irradiation part configured to irradiate an inspection target substrate with multiple beams...
US-9,859,074 Locking device for rocker switch
A locking device for a rocker switch that has an elongated member having a top edge, a bottom edge, opposite ends, a front facing surface and a rear facing...
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