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Patent # Description
US-9,865,489 Substrate support chuck cooling for deposition chamber
A substrate support chuck for use in a substrate processing system is provided herein. In some embodiments, a substrate support for use in a substrate...
US-9,865,488 Processing method and processing apparatus
A method of processing an object to by using a processing apparatus is provided. The apparatus includes a plurality of containers to contain the object, a...
US-9,865,487 Substrate storage container
A substrate storing container that stores substrates composed of semiconductor wafers includes: a locked portion that is arranged at a center portion of an...
US-9,865,486 Timing/power risk optimized selective voltage binning using non-linear voltage slope
Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated...
US-9,865,485 Apparatus and method for determining the location of plate elements of a wafer boat
An apparatus and method determines the location of wafer boat plate elements having a plurality of plate elements arranged substantially parallel to each other....
US-9,865,484 Selective etch using material modification and RF pulsing
Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The...
US-9,865,483 Substrate liquid processing method, substrate liquid processing apparatus, and recording medium
Disclosed is a substrate liquid processing method. The method includes: supplying a first processing liquid to a central portion of a substrate at a first flow...
US-9,865,482 Semiconductor device and method of forming a fan-out structure with integrated passive device and discrete...
A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) is mounted to the...
US-9,865,481 Package and method for integration of heterogeneous integrated circuits
A package for holding a plurality of heterogeneous integrated circuits includes a first chip having a first conductive pad and a first substrate including a...
US-9,865,480 Printed circuit board including under-fill dam and fabrication method thereof
The present invention relates to an under-fill dam with high detection probability that is composed of a dry film solder resist and provided in the form of a...
US-9,865,479 Method of attaching components to printed cirucuit board with reduced accumulated tolerances
A method is provided for attaching components to pads on a PCB, where total accumulated tolerances are reduced by separating accumulated tolerances into...
US-9,865,478 Shielding design for metal gap fill
The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the...
US-9,865,477 Backside polisher with dry frontside design and method using the same
The present disclosure provides a semiconductor fabrication apparatus in accordance with one embodiment. The apparatus includes a wafer stage that is operable...
US-9,865,476 Method and apparatus for pulse electrochemical polishing
A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all...
US-9,865,475 Dry separation method using high-speed particle beam
A dry separation method is a dry separation method for ashing a photoresist, including a spraying and separating step of spraying sublimation particles on the...
US-9,865,474 Etching method using plasma, and method of fabricating semiconductor device including the etching method
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at...
US-9,865,473 Methods of forming semiconductor devices using semi-bidirectional patterning and islands
Devices and methods of fabricating integrated circuit devices using semi-bidirectional patterning are provided. One method includes, for instance: obtaining an...
US-9,865,472 Fabrication of a silicon structure and deep silicon etch with profile control
A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine...
US-9,865,471 Etching method and etching apparatus
A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF.sub.3 gas, and O.sub.2 gas into a chamber and performing a plurality of...
US-9,865,470 Processing apparatus and processing method
A processing apparatus includes a rotary table that causes a workpiece to rotate around a rotary axis, a roller-shaped member that rotates on an axis orthogonal...
US-9,865,469 Epitaxial lift-off process with guided etching
A method for performing epitaxial lift-off allowing reuse of a III-V substrate to grow III-V devices is presented. A sample is received comprising a growth...
US-9,865,468 Method of positioning cutting member to semiconductor chip with grooves
Provided is a method for manufacturing a semiconductor chip including forming a groove on a front surface side along a cut area of a substrate, and a concave...
US-9,865,467 Recess filling method and processing apparatus
There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface...
US-9,865,466 Silicide phase control by confinement
Implementations described herein generally relate to methods of selective deposition of metal silicides. More specifically, implementations described herein...
US-9,865,465 Nanocrystal thin film fabrication methods and apparatus
Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant...
US-9,865,464 Nanocrystalline diamond carbon film for 3D NAND hardmask application
A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a...
US-9,865,463 Method of manufacturing a semiconductor device
In a method of manufacturing a semiconductor device, a first photoresist layer is applied on a polycrystalline silicon layer formed on a semiconductor...
US-9,865,462 Strain relaxed buffer layers with virtually defect free regions
A strain relaxed buffer layer of a second semiconductor material and of a second lattice constant and containing misfit dislocation defects and threading...
US-9,865,461 Process for producing structured coatings
The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate...
US-9,865,460 Semiconductor device having fin-type channel and method for forming the same
A method for forming a semiconductor device having a fin-type channel is provided. The method may include the following operations: forming a first buffer layer...
US-9,865,459 Plasma treatment to improve adhesion between hardmask film and silicon oxide film
The present disclosure relates to methods for improving adhesion between a hardmask layer and a subsequent layer on the hardmask layer. Particularly, embodiment...
US-9,865,458 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle...
US-9,865,457 Nitride film forming method using nitrading active species
There is provided a method of forming a nitride film, including: repeating a cycle including an adsorption process of adsorbing a film forming precursor gas...
US-9,865,456 Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about...
US-9,865,455 Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
Provided are methods and apparatuses for depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal...
US-9,865,454 Substrate processing apparatus and substrate processing method
A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas...
US-9,865,453 Semiconductor devices including device isolation structures and methods of manufacturing the same
A method of manufacturing a semiconductor device includes forming a plurality of recess regions on an upper surface of a substrate, forming a first oxide layer...
US-9,865,452 Substrate processing method and substrate processing apparatus
Disclosed is a substrate processing method that includes a water-repellency step, a rinse step, and a dry step. In the water-repellency step, a water-repellent...
US-9,865,451 Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method for cleaning an interior of a process chamber after performing a process of forming a carbon-containing film on a substrate in the process chamber...
US-9,865,450 Low-pressure discharge lamp with fluorescent particles having a small particle size
In different embodiments, a low-pressure discharge lamp (1) is provided. The low-pressure discharge lamp has a discharge vessel (2) and a coating structure (7)....
US-9,865,449 Illuminant and illuminant lamp comprising said illuminant
A phosphor for low-pressure discharge lamps is disclosed, wherein the phosphor is present in the form of phosphor grains coated with a protective layer, wherein...
US-9,865,448 Excimer light source
A light source, with electrodes of alternating polarity attached to a substrate in an excimer ultraviolet (UV) lamp, for generating a plasma discharge between...
US-9,865,447 High brightness laser-sustained plasma broadband source
The broadband light source includes a gas containment structure and a pump laser for generating a pump beam including illumination of a wavelength near that of...
US-9,865,446 Systems and methods for reducing the kinetic energy spread of ions radially ejected from a linear ion trap
A system for analyzing a sample includes a linear ion trap, an insert DC electrode, a voltage controller, and an RF control circuitry. The linear ion trap...
US-9,865,445 Multi-reflecting mass spectrometer
To improve spatial and energy acceptance of multi-reflecting time-of-flight, open traps, and electrostatic trap analyzers, a novel ion mirror is disclosed....
US-9,865,444 Time-of-flight mass spectrometer
Ions ejected substantially simultaneously from a collision cell after being temporarily held inside the collision cell arrive at an orthogonal acceleration unit...
US-9,865,443 Mass analysis method and inductively coupled plasma mass spectrometer
An Inductively Coupled Plasma Mass Spectrometer including: a plasma ionization part; a mass analysis part; a storage part that stores ion information about...
US-9,865,442 Curved ion guide with non mass to charge ratio dependent confinement
A non-linear ion guide is disclosed comprising a plurality of electrodes. An ion guiding region is arranged between the electrodes, and the ion guiding region...
US-9,865,441 Mass spectrometer
The present disclosure provides a mass spectrometer for performing an analysis of sample ions, and a method for operating a mass spectrometer. The mass...
US-9,865,440 Sputtering shield
A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture...
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