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Patent # Description
US-9,911,821 Semiconductor device structure and method for forming the same
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes...
US-9,911,820 Method for fabrication of a field-effect with reduced stray capacitance
A method of fabrication, including the steps for supplying a substrate including a layer of semiconductor material covered by a sacrificial gate including a...
US-9,911,819 Circuits using gate-all-around technology
A semiconductor structure includes a first GAA transistor and a second GAA transistor. The first GAA transistor includes: a first top OD region, a first bottom...
US-9,911,818 Semiconductor device
A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of...
US-9,911,817 Field-plate structures for semiconductor devices
Field-plate structures are disclosed for electrical field management in semiconductor devices. A field-plate semiconductor structure includes a semiconductor...
US-9,911,816 Semiconductive device and associated method of manufacture
A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an...
US-9,911,815 Extended-drain structures for high voltage field effect transistors
Planar and non-planar field effect transistors with extended-drain structures, and techniques to fabricate such structures. In an embodiment, a field plate...
US-9,911,814 Semiconductor device and manufacturing method thereof
A semiconductor device includes a P-type semiconductor substrate, a plurality of N-type buried diffusion layers that are arranged in the semiconductor...
US-9,911,813 Reducing leakage current in semiconductor devices
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second...
US-9,911,812 Semiconductor device having a fin shell covering a fin core
According to an exemplary embodiment, a method of forming a fin structure is provided. The method includes the following operations: etching a first dielectric...
US-9,911,811 Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base,...
A method for manufacturing a silicon carbide semiconductor device comprises: a step for forming a front-surface electrode (30) on a front surface side of a...
US-9,911,810 Process for manufacturing a semiconductor power device comprising charge-balance column structures and...
Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is...
US-9,911,809 Semiconductor device having impurity region
A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed...
US-9,911,808 Method for forming a semiconductor device and a semiconductor device
A method for forming a semiconductor device includes incorporating first dopant atoms of a first conductivity type into a semiconductor substrate to form a...
US-9,911,807 Strain compensation in transistors
Transistor structures having channel regions comprising alternating layers of compressively and tensilely strained epitaxial materials are provided. The...
US-9,911,806 Solvent-based oxidation on germanium and III-V compound semiconductor materials
A method to provide an isolation feature over a semiconductor structure is disclosed. The method includes forming a fin structure over a semiconductor...
US-9,911,805 Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)
Some embodiments of the present disclosure relate to a method. In this method, a semiconductor substrate, which has an active region disposed in the...
US-9,911,804 Vertical fin field effect transistor with air gap spacers
A fin field effect transistor device with air gaps, including a source/drain layer on a substrate, one or more vertical fin(s) in contact with source/drain...
US-9,911,803 Semiconductor device
A semiconductor device includes a semiconductor substrate. The element region of the semiconductor substrate includes a first body region having a first...
US-9,911,802 Display device and method for manufacturing the same
A method for manufacturing a display device, according to an exemplary embodiment of the present inventive concept, includes forming a semiconductor of a...
US-9,911,801 Light emitting device
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture...
US-9,911,800 Light emitting device
An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect...
US-9,911,799 Organic light-emitting display apparatus and method of repairing the same
Provided is an organic light-emitting display apparatus and a method of repairing the same. The organic light-emitting display apparatus includes: an emission...
US-9,911,798 Display device having a wavy line
A display device includes a substrate including an outer area neighboring a border; and an insulating layer positioned over the substrate and including a...
US-9,911,797 Light emitting display apparatus
There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting...
US-9,911,796 Display device and method of manufacturing a display device
A display device, which includes a plurality of unit pixels, includes a plurality of first electrodes respectively corresponding to the plurality of unit...
US-9,911,795 Pixel unit and method of manufacturing the same, light emitting device and display device
The present invention discloses a pixel unit, which comprises a pixel defining layer defining a pixel region, a first electrode within a central area of the...
US-9,911,794 Organic light emitting display device
The present invention provides an organic light emitting display device, belonging to the field of display technology, being capable of solving the problem, in...
US-9,911,793 Foldable display apparatus and method of manufacturing the same
A foldable display apparatus includes a flexible display panel and a case. The flexible display panel includes a protection film, and the case supports the...
US-9,911,792 Display unit
A display unit includes a plurality of light emitting devices, each of the light emitting devices including a function layer including at least an organic layer...
US-9,911,791 Display device
In a display device, light emitting areas and colored areas each have a predetermined planar shape having no rotational symmetry so that rotation of the area by...
US-9,911,790 Resistive RAM including air gaps between word lines and between vertical bit lines
A plurality of alternating stacks laterally spaced apart by line trenches is provided over a substrate. Each alternating stack includes respective word lines...
US-9,911,789 1-Selector n-Resistor memristive devices
A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector...
US-9,911,788 Selectors with oxide-based layers
A selector with an oxide-based layer includes an oxide-based layer that has a first region and a second region. The first region contains a metal oxide in a...
US-9,911,787 Semiconductor device and method of forming the same
A semiconductor device includes an active region defining an isolation region. First and second cell interconnection structures are on the active region and the...
US-9,911,786 Semiconductor optoelectronic device with an insulative protection layer and the manufacturing method thereof
The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the...
US-9,911,785 Method for making a device for detecting electromagnetic radiation comprising a layer of getter material
A method makes an electromagnetic radiation detecting device including at least one thermal detector with an absorbent membrane suspended above a substrate,...
US-9,911,784 Monolithic visible-infrared focal plane array on silicon
A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting...
US-9,911,783 Solid-state image pickup device
A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is...
US-9,911,782 Semiconductor device and method for driving the same
The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels....
US-9,911,781 Photosensitive imaging devices and associated methods
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate...
US-9,911,780 Backside metal grid and metal pad simplification
An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a...
US-9,911,779 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip...
US-9,911,778 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion...
US-9,911,777 Image sensors using different photoconversion region isolation structures for different types of pixel regions
An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first...
US-9,911,776 Solid-state imaging apparatus
A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member...
US-9,911,775 Image sensor and method for fabricating the same
An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the...
US-9,911,774 Photodiode placement for cross talk suppression
There is provided a photodiode array. The photodiode array includes a substrate that has an optical interface surface arranged for accepting external input...
US-9,911,773 Virtual high dynamic range large-small pixel image sensor
An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor...
US-9,911,772 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the...
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