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Patent # Description
US-9,923,132 Solid state lighting component package with conformal reflective coating
A solid state lighting package is provided. The package comprising at least one LED element positioned on a top surface of a substrate and a conformal...
US-9,923,131 Illumination device
There is proposed an illuminating device, comprising (a) a luminous element, (b) a support, and (c) a primary optical element, characterized in that (i) said...
US-9,923,130 Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
An optoelectronic semiconductor component has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has at least one...
US-9,923,129 Method for producing an LED module and LED module
Various embodiments may relate to a method for producing an LED module, including providing a housing implemented as a hollow body, having an opening on a light...
US-9,923,128 Light emitting device package and backlight unit having the same
Provided are a light emitting device package in which lens tilting is prevented to reduce luminance and color deviations and a backlight unit having the same....
US-9,923,127 Display device and method for manufacturing the same
An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from...
US-9,923,126 Light emitting device having high color rendering using three phosphor types
The light emitting device includes at least one light emitting element that emits light having a peak emission wavelength in a wavelength range from 380 nm to...
US-9,923,125 Method for improving defect-free rate of LED light source, phosphor powder, and LED light source
A method for improving optical performance of an LED light source, a light conversion filter obtained by using the method, and the corresponding LED light...
US-9,923,124 Display device
A display device (utilizing quantum dots, photonic crystals, microlight emitting diodes/vertical cavity surface emitting lasers and electrically switchable...
US-9,923,123 Printed circuit board and light-emitting device including same
A printed circuit board having an improved heat radiation performance, and a light-emitting device including the same are provided. The printed circuit board...
US-9,923,121 Light-emitting diode and manufacturing method therefor
A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least...
US-9,923,120 Semiconductor light emitting element and method of producing the same
A method of producing a semiconductor light emitting element includes providing a semiconductor stack including a first semiconductor layer, an active layer, a...
US-9,923,119 White LED chip and white LED packaging device
A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is...
US-9,923,118 Semiconductor structure with inhomogeneous regions
A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a...
US-9,923,117 Semiconductor structure with inhomogeneous regions
A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a...
US-9,923,116 Method for producing solar cells having simultaneously etched-back doped regions
A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a...
US-9,923,115 Particle detector and method of making the same
A particle detector includes a support member. A front electrode layer is disposed over the support member. A semiconductor heterojunction is disposed over the...
US-9,923,114 Infrared detector and method of detecting one or more bands of infrared radiation
An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band,...
US-9,923,113 Luminescent solar concentrator comprising tetra-substituted benzoheterodiazole compounds
A luminescent solar concentrator (LSC) comprising at least one tetra-substituted benzoheterodiazole compound having general formula (I): wherein: R.sub.1 and...
US-9,923,112 Concentrated photovoltaic system modules using III-V semiconductor solar cells
A solar cell receiver for use in a concentrating solar system which concentrates the solar energy onto a solar cell for converting solar energy to electricity....
US-9,923,111 Illumination and radiative cooling
Aspects of the present disclosure are directed to providing and/or controlling electromagnetic radiation. As may be implemented in accordance with one or more...
US-9,923,110 Solar battery module and method of manufacture thereof
A solar cell module having a good appearance after lamination and a method for producing such a solar cell module are provided by specifying the combination...
US-9,923,109 Self-powered light-seeking apparatus and photovoltaic cells with light concentrating means
A self-powered light seeking apparatus and method for directing a target-plane towards a light source. The apparatus includes a photovoltaic powering...
US-9,923,108 Solar power generation method and apparatus
A solar power generation apparatus includes a stationary horizontal base. A stator is housed in the base, and a vertical column extends upward from the base. A...
US-9,923,107 Photovoltaic module, photovoltaic apparatus, and method for producing photovoltaic module
A photovoltaic module includes: a flexible printed circuit; and a plurality of power generating elements mounted on the flexible printed circuit, wherein the...
US-9,923,106 Method for fabricating a photosensitive device
A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within...
US-9,923,105 Processing of a direct-bandgap chip after bonding to a silicon photonic device
A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a...
US-9,923,104 Photosensor including multiple detection mode and method of operating the same
Provided are a photosensor and a method of operating the same. The photosensor includes a lower electrode, a semiconductor layer, a 2-dimensional material...
US-9,923,103 Detachable package structure
A detachable package structure that includes an assembly substrate, a first semiconductor substrate, a second semiconductor substrate, and a combination element...
US-9,923,102 Solar cell
A solar cell includes a semiconductor substrate, a passivation layer, a back electrode layer, and several bus bars. The semiconductor substrate has an upper...
US-9,923,101 Semiconductor structure
A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating...
US-9,923,100 Flash memory structure and fabrication method thereof
A method is provided for fabricating a flash memory structure. The method includes providing a substrate; and forming a gate structure and a hard mask layer....
US-9,923,099 TFT with oxide layer on IGZO semiconductor active layer
A method for manufacturing a thin-film transistor (TFT) is provided, including the following steps. A gate is formed on a substrate. A gate insulating layer is...
US-9,923,097 Semiconductor device
A semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film with a gate insulating film therebetween,...
US-9,923,096 Gate-all-around fin device
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality...
US-9,923,095 Manufacturing method of non-planar FET
The present invention provides a non-planar FET and a method of manufacturing the same. The non-planar FET includes a substrate, a fin structure, a gate and a...
US-9,923,094 Source/drain regions for fin field effect transistors and methods of forming same
A method for forming a semiconductor device includes forming a fin extending upwards from a semiconductor substrate and forming a sacrificial layer on sidewalls...
US-9,923,093 Field effect transistors and methods of forming same
Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the...
US-9,923,092 Method of forming a semiconductor device
In one embodiment, a method of forming a semiconductor device may include forming a buried region within a semiconductor region, including forming an opening in...
US-9,923,091 Semiconductor device including power MOS transistor
An n-channel power MOS transistor having a gate electrode is formed in an element formation region defined in a semiconductor substrate. A p-type guard ring...
US-9,923,090 Silicon carbide semiconductor element and method for manufacturing the same
In the silicon carbide semiconductor element, a second silicon carbide semiconductor layer that is in contact with the surface of a first silicon carbide...
US-9,923,089 Switching device
The switching device includes an electron transport layer; an electron supply layer provided on the electron transport layer and being in contact with the...
US-9,923,088 Semiconductor device with vertically integrated pHEMTs
The present disclosure relates to a semiconductor device with vertically integrated pseudomorphic high electron mobility transistors (pHEMTs). The disclosed...
US-9,923,087 Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain...
US-9,923,086 CMOS device having carbon nanotubes
A method, and the resulting structure, of making a CMOS device from carbon nanotube substrate, where a carbide contact is formed in a source drain region. The...
US-9,923,085 Method for manufacturing a thin film transistor and an array substrate, and corresponding devices
The present invention relates to a method for manufacturing a thin film transistor and an array substrate, and corresponding devices. In the thin film...
US-9,923,084 Forming a fin using double trench epitaxy
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a fin using double trench epitaxy....
US-9,923,083 Embedded endpoint fin reveal
A method for fabricating a semiconductor structure includes forming a cut mask over a set of fin hard masks formed on a substrate. At least one gap defined at...
US-9,923,082 Junction butting structure using nonuniform trench shape
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a partially depleted ...
US-9,923,081 Selective process for source and drain formation
A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of...
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