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Patent # Description
US-9,929,285 Super-junction schottky diode
The present invention relates to the field of semiconductor technology, particularly to a super-junction schottky diode. According to the present invention, the...
US-9,929,284 Power schottky diodes having local current spreading layers and methods of forming such devices
A Schottky diode includes a drift region doped with dopants having a first conductivity type, first and second blocking junctions that are doped with dopants...
US-9,929,283 Junction field effect transistor (JFET) with first and second top layer of opposite conductivity type for high...
A semiconductor device includes a semiconductor substrate, a first well region, and a second well region. The semiconductor substrate has a first conductivity...
US-9,929,282 Field-effect transistors having black phosphorus channel and methods of making the same
Various transistors, such as field-effect transistors, and methods of fabricating the transistors are disclosed herein. An exemplary transistor includes a...
US-9,929,281 Transisitor comprising oxide semiconductor
A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source...
US-9,929,280 Semiconductor device including oxide semiconductor film containing indium
A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film,...
US-9,929,279 Semiconductor device and manufacturing method thereof
The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The...
US-9,929,277 Thin film transistor and fabrication method thereof, array substrate and display
Embodiments of the disclosure provide a thin film transistor and a fabrication method thereof, an array substrate and a display. The thin film transistor...
US-9,929,276 Semiconductor device and method for manufacturing the same
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided....
US-9,929,274 Thin-film transistor, method for fabricating thin-film transistor, and display device
Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the...
US-9,929,273 Apparatus and methods of forming fin structures with asymmetric profile
An embodiment includes a microelectronic device comprising: a substrate comprising a raised portion and a non-raised portion, wherein a dielectric material is...
US-9,929,272 Fin structure of FinFET
A fin structure disposed over a substrate and a method of forming a fin structure are disclosed. The fin structure includes a mesa, a channel disposed over the...
US-9,929,271 Semiconductor device and method
A representative method for manufacturing a semiconductor device (e.g., a fin field-effect transistor) includes the steps of forming a gate structure having a...
US-9,929,270 Gate all-around FinFET device and a method of manufacturing same
A method for manufacturing a fin field-effect transistor (FinFET) device, comprises patterning a first layer on a substrate to form at least one fin, patterning...
US-9,929,269 FinFET having an oxide region in the source/drain region
Embodiments of the present disclosure include a semiconductor device, a FinFET device, and methods for forming the same. An embodiment is a semiconductor device...
US-9,929,268 Fin field effect transistor and method for fabricating the same
A method of fabricating a FinFET includes at last the following steps. A <551> direction is determined by tilting 8.05.+-.2 degrees from a normal vector...
US-9,929,267 N-type fin field-effect transistor and fabrication method thereof
The present disclosure provides N-type fin field-effect transistors and fabrication methods thereof. A method for fabricating an N-type fin field-effect...
US-9,929,266 Method and structure for incorporating strain in nanosheet devices
A semiconductor structure includes a plurality of stacked and suspended semiconductor nanosheets located above a semiconductor substrate. Each semiconductor...
US-9,929,265 Semiconductor device
A semiconductor device includes: three or more transistors, which are formed on a semiconductor substrate and arranged in one direction; and a PN junction...
US-9,929,264 Field-effect transistor and method of making the same
A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially...
US-9,929,263 Semiconductor device and method of making a semiconductor device
A semiconductor device and a method of making the same. The device includes a substrate having an AlGaN layer located on one or more GaN layers, for forming a...
US-9,929,262 3-5 device with doped regions and method of fabricating
A semiconductor device includes a carrier transit layer including a first region and second and third regions having a density of a donor impurity element...
US-9,929,261 Electronic device including a HEMT with a segmented gate electrode
An electronic device can include a low-side HEMT including a segmented gate electrode; and a high-side HEMT coupled to the low-side HEMT, wherein the low-side...
US-9,929,260 IGBT semiconductor device
A semiconductor device includes a semiconductor substrate, a base region formed in the semiconductor substrate on a front surface side thereof, a gate trench...
US-9,929,259 Semiconductor device and manufacturing method for semiconductor device
A semiconductor device including: a P-type base region provided; an N-type emitter region provided inside the P-type base region; a P-type collector region that...
US-9,929,258 Method of junction control for lateral bipolar junction transistor
A method of controlling formation of junctions in a lateral bipolar junction transistor comprises: providing a starting substrate comprising a bulk silicon...
US-9,929,257 Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
Devices, and methods of forming such devices, having a material that is semimetal when in bulk but is a semiconductor in the devices are described. An example...
US-9,929,256 Fabrication of an isolated dummy fin between active vertical fins with tight fin pitch
A method of forming an arrangement of active and inactive fins on a substrate, including forming at least three vertical fins on the substrate, forming a...
US-9,929,255 Robust gate spacer for semiconductor devices
After formation of a gate structure and a lower dielectric spacer laterally surrounding the gate structure, a disposable material layer is deposited and...
US-9,929,254 Method of manufacturing semiconductor device
A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A...
US-9,929,253 Method for making a semiconductor device with sidewal spacers for confinig epitaxial growth
A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed...
US-9,929,252 Method of forming thin film and method of manufacturing semiconductor device
A method of forming a thin film includes forming an interface layer stack on a semiconductor substrate. Forming the interface layer stack may include performing...
US-9,929,251 Polysilicon design for replacement gate technology
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over...
US-9,929,250 Semiconductor device including optimized gate stack profile
A semiconductor device is provided with an electrically conductive gate having an enhanced gate profile. The semiconductor device includes a semiconductor...
US-9,929,249 Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes: forming a semiconductor structure including a pattern; forming an epitaxial layer having a first...
US-9,929,248 Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same
An embodiment high electron mobility transistor (HEMT) includes a gate electrode over a semiconductor substrate and a multi-layer semiconductor cap over the...
US-9,929,247 Etch stop for airgap protection
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides...
US-9,929,246 Forming air-gap spacer for vertical field effect transistor
A method is presented for forming a semiconductor structure. The method includes forming a fin over a bottom source/drain region, forming a high-k metal gate...
US-9,929,245 Semiconductor structures and methods for multi-level work function
Semiconductor devices and methods for forming semiconductor devices are provided. A vertical channel structure extends from a substrate and is formed as a...
US-9,929,244 Semiconductor device and method for producing a semiconductor device
A method for producing a semiconductor device includes: depositing a barrier layer on a first surface of a semiconductor body having active regions of a...
US-9,929,243 Stepped field plate wide bandgap field-effect transistor and method
A method of making a stepped field gate for an FET including forming a first passivation layer on a barrier layer, defining a first field plate by using...
US-9,929,242 Semiconductor device and manufacturing method thereof
A Fin FET semiconductor device includes a fin structure extending in a first direction and extending from an isolation insulating layer. The Fin FET device also...
US-9,929,241 Semiconductor device structure for improved performance and related method
A semiconductor device includes a vertical gate electrode in a gate trench in a semiconductor substrate, and a lateral gate electrode over the semiconductor...
US-9,929,240 Memory transistor with multiple charge storing layers and a high work function gate electrode
An example memory device includes a channel positioned between and electrically connecting a first diffusion region and a second diffusion region, and a tunnel...
US-9,929,239 Semiconductor device and method of fabricating the same
The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric...
US-9,929,238 Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance
Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of...
US-9,929,237 Method for manufacturing graphine film electronic device
A GNR is a ribbon-shaped graphene film which includes: five or more (for example, five, seven, or nine) six-membered rings of carbon atoms which are bonded and...
US-9,929,236 Active area shapes reducing device size
Methods form structures to include a first pair of complementary transistors (having first and second transistors) and a second pair of complementary...
US-9,929,235 Semiconductor device and method for fabricating the same
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first...
US-9,929,234 Semiconductor device having a cap layer with V-shape
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is...
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