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Patent # Description
US-9,929,029 Substrate carrier system
Embodiments described herein relate to a substrate carrier system. The substrate carrier system includes a carrier for transferring a substrate within a...
US-9,929,028 Service tunnel for use on capital equipment in semiconductor manufacturing and research fabs
A system for processing substrates is provided, comprising: a wafer transport assembly that is configured to transport wafers to and from one or more process...
US-9,929,027 Easy access lamphead
Embodiments described herein generally relate to an improved power distribution assembly for a lamphead assembly used in a thermal processing chamber. In one...
US-9,929,026 Methods and apparatuses for deuterium recovery
Novel methods, systems, and apparatuses for reclaiming annealing gases from a high pressure annealing processing system are disclosed. According to an...
US-9,929,025 Cassette fixture for holding film frames with affixed thin substrates during liquid chemical batch removal of...
The invention describes the ability to conduct multiple carrier substrate removal practices simultaneously. The fixture design is slotted in a manner to hold...
US-9,929,024 Encapsulated dies with enhanced thermal performance
The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip...
US-9,929,023 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device may include forming first trenches that define active patterns extending in a first direction on a substrate,...
US-9,929,022 Semiconductor chip package and method of manufacturing the same
A method of manufacturing a semiconductor package includes: providing a package substrate having a first surface and a second surface opposite the first...
US-9,929,021 Dry etching method and dry etching agent
A dry etching method provided to involve the steps of: (a) disposing a substrate within a chamber, the substrate having an amorphous carbon film; (b) preparing...
US-9,929,020 Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
A method of making a semiconductor device includes disposing a first hard mask (HM), amorphous silicon, and second HM on a substrate; disposing oxide and...
US-9,929,019 Patterns forming method
A patterns forming method begins with performing a lithography process on a photoresist film with a photomask having first apertures in a first mask region and...
US-9,929,018 Semiconductor wafer and method for producing same
A semiconductor wafer (12) with a thinned central portion (2) has a first side (3) and a second side (4) and at least one reinforcement structure for increasing...
US-9,929,017 Etching method using hydrogen peroxide solution containing tungsten
An etching method according to an embodiment, includes performing etching on a material having tungsten (W) as a main component by using as an etchant a...
US-9,929,016 Material removal process for self-aligned contacts
A method is disclosed of removing a first material disposed over a second material adjacent to a field effect transistor gate having a gate sidewall layer that...
US-9,929,015 High efficiency apparatus and method for depositing a layer on a three dimensional structure
In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel...
US-9,929,014 Dopant precursors for mono-layer doping
A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding...
US-9,929,013 Methods of fabricating a semiconductor device
Methods of fabricating a semiconductor device are provided. The methods may include etching a bulk pattern on a peripheral region to form patterns and then...
US-9,929,012 Resist having tuned interface hardmask layer for EUV exposure
A method is disclosed to prepare a substrate for photolithography. The method includes forming an underlayer over a surface of the substrate; depositing an...
US-9,929,011 Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer...
US-9,929,010 Method for manufacturing semiconductor device
A highly reliable semiconductor device including an oxide semiconductor film with high crystallinity is provided. A first oxide semiconductor film and a second...
US-9,929,009 Cyclical deposition of germanium
In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is...
US-9,929,008 Substrate processing method and substrate processing apparatus
A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of...
US-9,929,007 e-Flash Si dot nitrogen passivation for trap reduction
The present disclosure relates to a structure and method for reducing dangling bonds around quantum dots in a memory cell. In some embodiments, the structure...
US-9,929,006 Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of...
A silicon chalcogenate precursor comprising the chemical formula of Si(XR.sup.1).sub.nR.sup.2.sub.4-n, where X is sulfur, selenium, or tellurium, R.sup.1 is...
US-9,929,005 Method of manufacturing semiconductor device
Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films...
US-9,929,004 High frequency, repetitive, compact toroid-generation for radiation production
Systems and methods are discussed to create radiation from one or more compact toroids. Compact toroids can be created from plasma of gases within a confinement...
US-9,929,003 Ion source filter
An ion source filter for use in the source region is disclosed. The ion source filter includes four rod electrodes having circular cross sections. The rod...
US-9,929,002 High pressure mass resolving ion guide with axial field
A mass spectrometer is disclosed comprising a first mass filter comprising a plurality of electrodes and a first device arranged and adapted to generate an...
US-9,929,001 Mass spectrometer
In a mass spectrometer according to the present invention, when MRM measurements for a plurality of MRM transitions need to be performed within one cycle, a...
US-9,929,000 Method and an apparatus for ionizing a sample
A method of ionizing a sample includes providing an aqueous liquid and directing a jet comprising carbon dioxide to interact with the provided aqueous liquid....
US-9,928,999 Flagging ADC coalescence
A method of mass spectrometry is disclosed comprising digitising at least one individual signal or transient, determining in relation to the digitized signal or...
US-9,928,998 Sputtering apparatus
The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The...
US-9,928,997 Apparatus for PVD dielectric deposition
Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber...
US-9,928,996 Magnetron sputtering target and process for producing the same
A process for producing a magnetron sputtering target includes: mixing and dispersing an oxide powder and a magnetic metal powder, the magnetic metal powder...
US-9,928,995 Methods for preventing plasma un-confinement events in a plasma processing chamber
A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a...
US-9,928,994 Methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films
A method for depositing an amorphous carbon hardmask film includes arranging a substrate in a processing chamber, supplying a carrier gas to the processing...
US-9,928,993 Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide
A microwave antenna includes a first spiral conduit having a first conduit end, first plural ports in a floor of the first spiral conduit spaced apart along the...
US-9,928,992 Plasma generation device
A plasma generation device includes: a pair of electrodes that cause plasma to be generated in atmospheric pressure by a voltage being applied between the pair...
US-9,928,991 Cross sectional depth composition generation utilizing scanning electron microscopy
A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an...
US-9,928,990 Cross sectional depth composition generation utilizing scanning electron microscopy
A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an...
US-9,928,989 Method for automatic correction of astigmatism
The method is for automatic astigmatism correction of a lens system. A first image of a first frequency spectrum in a microscope is provided. The first image of...
US-9,928,988 Ion source
An ion source includes an ion source chamber having a longitudinal axis, the ion source chamber operative to define a plasma therein. The ion source also...
US-9,928,987 Inductively coupled plasma source with symmetrical RF feed
A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry.
US-9,928,986 Emitter arrangement
An emitter arrangement contains at least one emitter and at least one vaporizer element spaced apart therefrom. At least one of the emitters contains at least...
US-9,928,985 Robust emitter for minimizing damage from ion bombardment
In the present invention, an X-ray tube is provided including a cathode assembly with a cathode cup, and an emitter disposed within the cup configured to emit...
US-9,928,984 Gas inlet for an ion thruster
A gas inlet suitable in particular for use in an ion thruster includes a housing which is made of a gas-tight ceramics material, and an insert which is arranged...
US-9,928,983 Vaporizer for ion source
A vaporizer with several novel features to prevent vapor condensation and the clogging of the nozzle is disclosed. The vaporizer is designed such that there is...
US-9,928,982 Multiple configuration switching assembly
A switching assembly includes an operating assembly and a fixed contact assembly including a first fixed contact, a second fixed contact, a third fixed contact,...
US-9,928,981 Apparatus and method for powering a coil of latching relays and hybrid switches
Apparatus and method for latching one pole contact of at least one springy pole in a relay or hybrid switch for maintaining an engaging or disengaging state of...
US-9,928,980 Method of electricity leakage detection and prevention of electrical equipment's outer surface and system thereof
Disclosed in the present invention are a method of electricity leakage detection and prevention of electrical equipment's outer surface and system thereof. The...
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