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Patent # Description
US-9,935,243 Multistep deposition of zinc oxide on gallium nitride
A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO...
US-9,935,242 Semiconductor light emitting device with light extraction structures
Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some...
US-9,935,241 Solvent for manufacture of self-assembled nano-scale LED electrode assembly and method for manufacturing...
The present disclosure relates to a method for manufacturing a self-assembled nano-scale LED electrode assembly and more particularly, to a method for...
US-9,935,240 Near-infrared light emitting device using semiconductor nanocrystals
A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include...
US-9,935,239 Plasmonic light emitting diode
A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the...
US-9,935,238 Light-emitting element and lighting system
An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system. A light-emitting...
US-9,935,237 Solid state lighting devices with dielectric insulation and methods of manufacturing
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first...
US-9,935,236 Monolithic nano-cavity light source on lattice mismatched semiconductor substrate
An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice...
US-9,935,235 Method for manufacturing a semiconductor device
The performances of a semiconductor device are improved. A method for manufacturing a semiconductor device includes the steps of: providing a semiconductor...
US-9,935,234 Methods for manufacturing photoelectrosynthetically active heterostructures
A photoelectrosynthetically active heterostructure (PAH) is manufactured by forming or providing cavities in an electrically insulating material; forming or...
US-9,935,232 Method of manufacturing semiconductor device
According to one embodiment, a method of manufacturing a semiconductor device includes a step of grinding to thin a first semiconductor wafer on which a...
US-9,935,231 Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element
A method for manufacturing a semiconductor element comprising a single photon avalanche diode having a multiplication zone (AR) a guard ring structure with a...
US-9,935,230 Type IV semiconductor based high voltage laterally stacked multijunction photovoltaic cell
A method of forming a photovoltaic device that includes ion implanting a first conductivity type dopant into first regions of a semiconductor layer of an SOI...
US-9,935,229 Solar cell and method of fabricating the same
A solar cell according to the disclosure includes a back electrode layer; and a light absorbing layer on the back electrode layer, wherein the light absorbing...
US-9,935,228 Solar cell and method for manufacturing the same
A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer...
US-9,935,227 Solar cell module and method of manufacturing same
A solar cell module includes: solar cells, each of which includes first and second principal surfaces, on which a first and second bus bar electrodes are...
US-9,935,226 Photovoltaic module with simplified connection
Photovoltaic module (11) comprising a plurality of electrically connected photovoltaic cells (12), characterized in that it has a square shape and comprises at...
US-9,935,225 Electrical connectors of building integrable photovoltaic modules
Provided are novel building integrable photovoltaic (BIP) modules and methods of fabricating thereof. A module may be fabricated from an insert having one or...
US-9,935,224 Encapsulating layer adapted to be applied to back-sheets for photovoltaic modules including back-contact cells
The present invention provides for a multi-layered structure adapted to be applied to the surface of a back-contact back-sheet for a photovoltaic module...
US-9,935,223 Monolithic integration of heterojunction solar cells
A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the...
US-9,935,222 Shingled array solar cells and method of manufacturing solar modules including the same
A solar cell is provided including a substrate having a front and back side, a metallization pattern deposited on the front side, the metallization pattern...
US-9,935,221 Shingled array solar cells and method of manufacturing solar modules including the same
A solar cell is provided including a substrate having a front and back side, a metallization pattern deposited on the front side, the metallization pattern...
US-9,935,220 High efficiency quantum dot sensitized thin film solar cell with absorber layer
A photovoltaic (PV) device having a quantum dot sensitized interface includes a first conductor layer and a second conductor layer. At least one of the...
US-9,935,219 Photoelectric conversion device
It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion...
US-9,935,218 Generation of flexible high power pulsed waveforms
A method for generating high power pulsed RF waveforms comprises the steps of charging a transmission line in a pulse forming network with a high-voltage and...
US-9,935,217 High efficiency photovoltaic cells and manufacturing thereof
Novel structures of photovoltaic cells are provided. The cells are based on nanometer or micrometer-scaled wires, tubes, and/or rods, which are made of...
US-9,935,216 Wafer for solar cell, method of producing wafer for solar cell, method of producing solar cell, and method of...
Provided is a wafer for solar cell which can be produced using a polycrystalline semiconductor wafer cut out using a bonded abrasive wire, which wafer can be...
US-9,935,215 Transparent conductive electrode for three dimensional photovoltaic device
A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first...
US-9,935,214 Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber...
US-9,935,213 Wire-based metallization for solar cells
Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a...
US-9,935,212 Solar cell and method for manufacturing the same
A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a first conductive type substrate, an emitter layer of a second...
US-9,935,211 Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells
A back contact configuration for a CIGS-type photovoltaic device is provided. According to certain examples, the back contact configuration includes an optical...
US-9,935,210 Microelectronics package with integrated sensors
The present disclosure relates to a microelectronics package with optical sensors and/or thermal sensors. The disclosed microelectronics package includes a...
US-9,935,209 Multijunction metamorphic solar cell for space applications
A multijunction solar cell assembly and its method of manufacture including interconnected first and second discrete semiconductor body subassemblies disposed...
US-9,935,208 Energy storage device with large charge separation
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high...
US-9,935,207 Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by...
US-9,935,206 Packaged overvoltage protection circuit for triggering thyristors
In a first embodiment, an ultra-fast breakover diode has a turn on time T.sub.ON that is less than 0.3 microseconds, where the forward breakover voltage is...
US-9,935,205 Internal spacers for nanowire transistors and method of fabrication thereof
A nanowire transistor of the present description may be produced with internal spacers formed by using sacrificial spacers during the fabrication thereof. Once...
US-9,935,204 Static random access memory (SRAM) device for improving electrical characteristics and logic device including...
A static random access memory (SRAM) device includes a circuit element that includes a first inverter having a first load transistor and a first drive...
US-9,935,203 Semiconductor device and manufacturing method thereof
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A...
US-9,935,202 Transistor and display device comprising oxide semiconductor layer
To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a...
US-9,935,201 High doped III-V source/drain junctions for field effect transistors
A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts...
US-9,935,200 Annealed metal source drain overlapping the gate of a fin field effect transistor
A method of forming a field effect transistor is provided. The method of forming a field effect transistor may include forming a dummy gate perpendicular to and...
US-9,935,199 FinFET with source/drain structure
A semiconductor device includes a substrate including a first fin element, a second fin element, and a third fin element. A first source/drain epitaxial feature...
US-9,935,198 Method for inducing strain in vertical semiconductor columns
A vertical Metal-Oxide-Semiconductor (MOS) transistor includes a substrate and a nano-wire over the substrate. The nano-wire comprises a semiconductor material....
US-9,935,197 Semiconductor devices with low junction capacitances
Semiconductor devices with low junction capacitances and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor...
US-9,935,196 Semiconductor device and multiple gate field effect transistor
The present invention provides a semiconductor device, which includes a substrate, a first gate electrode, a second gate electrode, a source region and a drain...
US-9,935,195 Reduced resistance source and drain extensions in vertical field effect transistors
Semiconductor devices and methods of forming the same include forming semiconductor fins on a semiconductor substrate. A bottom source/drain region is formed in...
US-9,935,194 3D semiconductor integrated circuit device and method of manufacturing the same
A 3D semiconductor integrated circuit device and a method of manufacturing the same are provided. An active pillar is formed on a semiconductor substrate, and...
US-9,935,193 MOSFET termination trench
A method, in one embodiment, can include forming a core trench and a termination trench in a substrate. The termination trench is wider than the core trench. In...
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