Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,935,141 Semiconductor device and manufacturing method thereof
In a semiconductor device in which a plurality of light receiving elements are provided in each of a plurality of pixels that form a solid-state image sensor, a...
US-9,935,140 Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first...
US-9,935,139 Image sensor and method for forming the same
An image sensor and a method for forming an image sensor are provided. The image sensor includes a substrate, and the substrate includes a pixel region, a...
US-9,935,138 Article comprising a photodiode-side integrated fuse for avalanche photodetector focal plane array pixels and...
A scalable fuse design for individual pixels of a focal plane array of photodiodes comprises a fuse disposed on the upper surface of each photodiode in the...
US-9,935,137 Manufacture method of LTPS array substrate
The present invention provides a manufacture method of a LTPS array substrate. By utilizing one halftone mask, the N type heavy doping, the channel doping of...
US-9,935,136 Manufacturing method of display with lighting devices
A manufacturing method of display with lighting devices is disclosed, including providing a tank containing a liquid; disposing a carrying plate with several...
US-9,935,135 Display device, semiconductor device, and method of manufacturing display device
A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer...
US-9,935,134 Transistor substrate and display device
In a transistor substrate of a display device, a plurality of signal lines to which any one of drive signals of a gate signal and a video signal is supplied...
US-9,935,133 Display device and manufacturing method thereof
A display device includes: a first substrate comprising a display area including a plurality of pixels, and a peripheral area around the display area; a...
US-9,935,132 Pixel structure
A pixel structure including scan lines, data lines, and sub-pixels is provided. The scan and data lines are disposed on the substrate. The sub-pixels include...
US-9,935,131 Display substrate and manufacturing method thereof, display device
The invention provides a display substrate and a manufacturing method thereof, and a display device. The display substrate comprises: a base, and gate lines and...
US-9,935,130 Pixel structure and liquid crystal display comprising the pixel structure
A pixel structure includes pixel electrodes, data lines, and gate lines. Each of the pixel electrodes has two opposite ends that are each provided with one of...
US-9,935,129 Semiconductor device, electronic component, and electronic device
To provide a semiconductor device including a small-area circuit with high withstand voltage, an oxide semiconductor (OS) transistor is used as some of...
US-9,935,128 Pixel circuit, electro-optical device, and electronic apparatus
An electro-optical device formed on a semiconductor substrate, includes: a first transistor controlling a current level according to a voltage between a gate...
US-9,935,127 Control circuit of thin film transistor
A control circuit of a thin film transistor, comprising: a substrate; a silicon nitride layer disposed on the substrate; a silicon dioxide layer disposed on the...
US-9,935,126 Method of forming a semiconductor substrate with buried cavities and dielectric support structures
A method of forming a semiconductor device includes forming a plurality of trenches extending into a semiconductor substrate from a first surface of the...
US-9,935,125 Semiconductor device and manufacturing method of the same
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions...
US-9,935,124 Split memory cells with unsplit select gates in a three-dimensional memory device
Split memory cells can be provided within an alternating stack of insulating layers and word lines. At least one lower-select-gate-level electrically conductive...
US-9,935,123 Within array replacement openings for a three-dimensional memory device
An alternating stack of sacrificial material layers and insulating layers is formed over a substrate. Replacement of sacrificial material layers with...
US-9,935,122 Nonvolatile semiconductor memory device having electron scattering and electron accumulation capacities in...
A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell, the memory cell comprising: a semiconductor layer; a control gate...
US-9,935,121 Three dimensional vertical channel semiconductor memory device
According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, a memory film and a conductive member. The stacked...
US-9,935,120 Methods of fabricating integrated structures
Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and...
US-9,935,119 Dual control gate spacer structure for embedded flash memory
The present disclosure relates to a flash memory cell. In some embodiments, the flash memory cell has a control gate arranged over a substrate, and a select...
US-9,935,118 Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a first conductive layer, a first semiconductor body, a second semiconductor body, a first...
US-9,935,117 Single poly nonvolatile memory cells, arrays thereof, and methods of operating the same
A single poly NVM cell includes a first N-type well region and a second N-type well region spaced apart from each other by a P-type semiconductor layer, a first...
US-9,935,116 Manufacturing method of semiconductor memory device
A manufacturing method of a semiconductor memory device is provided. The semiconductor memory device can suppress current leakage generated during a programming...
US-9,935,115 Nonvolatile semiconductor storage device and method of manufacturing nonvolatile semiconductor storage device
A nonvolatile semiconductor storage device includes a memory string including a plurality of memory cells connected in series with each other, and a select gate...
US-9,935,114 Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of...
A method of forming an array comprising pairs of vertically opposed capacitors comprises forming a conductive lining in individual capacitor openings in support...
US-9,935,113 Non-volatile memory and method for programming and reading a memory array having the same
A non-volatile memory (NVM) includes a fin structure, a first fin field effect transistor (FinFET), a second FinFET, an antifuse structure, a third FinFET, and...
US-9,935,112 SRAM cell having dual pass gate transistors and method of making the same
A static random access memory (SRAM) cell includes 1.sup.st and 2.sup.nd fins disposed on a substrate. A 1.sup.st pass gate transistor (1.sup.st PG) is embedded...
US-9,935,111 Method of forming semiconductor device including edge chip and related device
A method of forming a semiconductor device includes forming a molding layer and a supporter layer on a substrate including an etch stop layer, forming a mask...
US-9,935,110 Memory device with manufacturable cylindrical storage node
A high capacitance embedded capacitor and associated fabrication processes are disclosed for fabricating a capacitor stack in a multi-layer stack to include a...
US-9,935,109 Dynamic memory structure
A dynamic memory structure is disclosed. The dynamic memory structure includes: a substrate; a first strip semiconductor material disposed on the substrate and...
US-9,935,108 Semiconductor memory device
A semiconductor memory device includes stacks on a substrate, each of the stacks including word lines stacked on the substrate and first and second string...
US-9,935,107 CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same
Techniques and methods related to dual strained cladding layers for semiconductor devices, and systems incorporating such semiconductor devices.
US-9,935,106 Multi-finger devices in mutliple-gate-contacted-pitch, integrated structures
The present disclosure generally relates to semiconductor structures and, more particularly, to multi-finger devices in multiple-gate-contacted-pitch,...
US-9,935,105 Semiconductor device
Data hold time is controlled without excessively increasing a circuit area. A semiconductor device includes a data buffer and a flip-flop formed of fin. As a...
US-9,935,104 Fin-type field effect transistors with single-diffusion breaks and method
Disclosed is a semiconductor structure, including at least one fin-type field effect transistor and at least one single-diffusion break (SDB) type isolation...
US-9,935,103 Semiconductor device and manufacturing method thereof
A semiconductor device includes first and second Fin FET and a separation plug made of an insulating material and disposed between the first and second Fin...
US-9,935,102 Method and structure for improving vertical transistor
A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes a first source/drain disposed in...
US-9,935,101 Vertical field effect transistor with uniform gate length
Fabrication of a semiconductor structure includes forming a set of two or more fins on a source/drain region formed on a substrate. A first mask layer and a...
US-9,935,100 Power rail inbound middle of line (MOL) routing
In certain aspects, a semiconductor die includes a power rail, a first gate, and a second gate. The semiconductor die also includes a first gate contact...
US-9,935,099 Semiconductor device
The present invention provides a semiconductor device including a semiconductor substrate, a first well, a second well, a gate electrode, an oxide semiconductor...
US-9,935,098 Electronic device with integrated galvanic isolation, and manufacturing method of the same
An electronic device includes a semiconductor body and a dielectric layer extending over the semiconductor body. A galvanic isolation module includes a first...
US-9,935,097 Semiconductor integrated circuit apparatus and manufacturing method for same
A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast...
US-9,935,096 Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device
Provided is an electrostatic protection circuit that has little leakage current under normal operation and allows a trigger voltage to be set comparatively...
US-9,935,095 Removing static electricity from a display device
A display device may include a substrate, a display area, a peripheral region, a driving circuit and a dummy wire. A display area formed on a side of the...
US-9,935,094 GOA circuit based on LTPS semiconductor thin film transistor
The present invention provides a GOA circuit based on LTPS semiconductor thin film transistor to control the voltage levels of the first node (Q(n)) and the...
US-9,935,093 Semiconductor element and semiconductor device
A semiconductor device includes a voltage generation circuit configured to generate a specific voltage; a first terminal configured to output the specific...
US-9,935,092 Radio frequency transistor stack with improved linearity
A RF transistor stack is described. The RF transistor stack comprises a first transistor having a T-gate layout configuration. The first transistor has a body...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.