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Patent # Description
US-9,934,990 Method of manufacturing a cooler for semiconductor modules
A cooling apparatus is manufactured by: receiving a discrete module by a first singular part, the discrete module including a semiconductor die encapsulated by...
US-9,934,989 Process for forming leadframe having organic, polymerizable photo-imageable adhesion layer
A lead frame that is partially covered with an adhesion layer. A method for forming a lead frame with an adhesion layer starting with a lead frame and using a...
US-9,934,988 Method for processing a silicon wafer
Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming...
US-9,934,987 Chemical circulation system and methods of cleaning chemicals
A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber....
US-9,934,986 Method of forming fine patterns
Provided is a method of forming fine patterns, which is capable of easily forming a plurality of patterns repeatedly with a fine pitch when forming patterns...
US-9,934,985 Critical dimension control for double patterning process
In a method for manufacturing a semiconductor device, a dummy gate layer and a hard mask layer are sequentially formed on a substrate. A first doped portion is...
US-9,934,984 Hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication
In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and...
US-9,934,983 Stress mitigation for thin and thick films used in semiconductor circuitry
A semiconductor device is configured to reduce stress in one or more film layers in the device. According to one embodiment, the semiconductor device includes a...
US-9,934,982 Etch rate modulation through ion implantation
As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and...
US-9,934,981 Techniques for processing substrates using directional reactive ion etching
A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate...
US-9,934,980 Rework and stripping of complex patterning layers using chemical mechanical polishing
A method utilizing a chemical mechanical polishing process to remove a patterned material stack comprising at least one pattern transfer layer and a template...
US-9,934,979 Gas distribution showerhead for inductively coupled plasma etch reactor
A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate...
US-9,934,978 Method of fabricating an electrical contact for use on a semiconductor device
According to an embodiment, a method of manufacturing a group III-V semiconductor device includes forming a gate contact that includes an electrode stack...
US-9,934,977 Salicide bottom contacts
A method of forming a contact to a semiconductor device that includes forming a vertically orientated channel region on semiconductor material layer of a...
US-9,934,976 Methods of forming low interface resistance rare earth metal contacts and structures formed thereby
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a contact opening in an inter layer...
US-9,934,975 N-type MOSFET and method for manufacturing the same
An N-type MOSFET and a method for manufacturing the same are disclosed. In one aspect, the method comprises forming source/drain regions in a semiconductor...
US-9,934,974 Microwave plasma device
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous...
US-9,934,973 Method for obtaining patterns in a layer
The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of...
US-9,934,972 Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening...
US-9,934,971 Method of forming an integrated circuit using a patterned mask layer
A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, wherein the patterned mask layer has a plurality of first...
US-9,934,970 Self aligned pattern formation post spacer etchback in tight pitch configurations
A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming...
US-9,934,969 Charged-particle-beam patterning without resist
A process for fabricating an integrated circuit is provided. The process includes providing a substrate, forming a hard mask upon the substrate by one of...
US-9,934,968 Method for manufacturing p-type zinc oxide film
There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The...
US-9,934,967 Formation of devices by epitaxial layer overgrowth
Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of...
US-9,934,966 Method for processing a carrier and an electronic component
In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer...
US-9,934,964 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and...
US-9,934,963 Multilayer dielectric structures with graded composition for nano-scale semiconductor devices
Multilayer dielectric structures are provided with graded composition. For example, a multilayer dielectric structure includes a stack of dielectric films,...
US-9,934,962 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes a process of forming a film on a substrate by performing a cycle a predetermined number of times. The...
US-9,934,961 Methods for forming fin structures for semiconductor devices
Structures and methods are provided for forming fin structures. A first fin structure is formed on a substrate. A shallow-trench-isolation structure is formed...
US-9,934,960 Method of manufacturing semiconductor device
A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including:...
US-9,934,959 Method and apparatus for purifying cleaning agent
A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a...
US-9,934,958 Substrate treatment apparatus and substrate treatment method
The substrate treatment apparatus includes a first nozzle, a second nozzle, a detector, and a controller. The first nozzle supplies an organic sublimable...
US-9,934,957 Method of processing bonded wafer
A wafer is bonded to a support plate by cutting off, with a cutting blade, an annular portion of the bonded wafer which extends from the outer peripheral edge...
US-9,934,956 Time multiplexed chemical delivery system
A gas delivery system delivers different process gas compositions to a common supply line at specified times. Multiple reservoirs are fluidly connected to the...
US-9,934,954 Quadrupole mass spectrometer
In mass spectrometry, ion optics process a received ion beam into an output ion beam travelling in an output direction and having a spatial distribution in a...
US-9,934,953 Determination of metal and metalloid concentrations using ICPMS
A system for determining an analyte by inductively coupled plasma mass spectrometry (ICPMS) includes a sample introduction device having a heated cyclonic spray...
US-9,934,952 Charged-particle detector and method of controlling the same
The present embodiment relates to a charged-particle detector, etc. provided with a structure for effectively suppressing ion feedbacks under a low-vacuum...
US-9,934,951 Target adapted to an indirect cooling device
The invention relates to a target which is embodied as a material source for a depositing method from the gas phase, comprising a front side and a rear side,...
US-9,934,950 Sputtering apparatuses and methods of manufacturing a magnetic memory device using the same
A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a...
US-9,934,949 Sputtering target and production method of the same
A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements;...
US-9,934,948 Magnetron-sputtering coating system and method, and display substrate
It is provided a magnetron-sputtering coating system including a sputtering chamber. The sputtering chamber therein includes: a set of target, formed by...
US-9,934,947 Plasma processing apparatus and waveform correction method
A plasma processing apparatus includes an electrode to which a high frequency for plasma generation is applied and which serves as a mounting table for a target...
US-9,934,946 Plasma processing apparatus and operating method of plasma processing apparatus
A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the...
US-9,934,945 Methods for removing particles from etching chamber
A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer,...
US-9,934,944 Plasma induced flow electrode structure, plasma induced flow generation device, and method of manufacturing...
In one embodiment, a plasma induced flow electrode structure has an electrode block, an insulating layer and an electrode layer. The electrode block has first...
US-9,934,943 Beam grid layout
A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam...
US-9,934,942 Chamber with flow-through source
Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber...
US-9,934,941 Etching apparatus and etching method
According to one embodiment, an etching apparatus includes a stage in an etching chamber, the stage which holds one of a first substrate and a second substrate,...
US-9,934,940 Control device, charged particle beam apparatus, program and method for producing processed product
There is provided a control device for controlling a charged particle beam apparatus, wherein the beam apparatus comprises a workpiece stage having at least two...
US-9,934,939 Scanning electron microscope system capable of measuring in-cell overlay offset using high-energy electron beam...
A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and...
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