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Patent # Description
US-9,941,384 Semiconductor device and method for fabricating the same
A semiconductor device includes a first III-V compound layer on a substrate, a second III-V compound layer on the first III-V compound layer, in which a...
US-9,941,383 Fast switching IGBT with embedded emitter shorting contacts and method for making same
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial...
US-9,941,382 Metal-semiconductor-metal (MSM) heterojunction diode
In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a...
US-9,941,380 Graphene transistor and related methods
A method and structure for providing high-quality transferred graphene layers for subsequent device fabrication includes transferring graphene onto a...
US-9,941,379 Semiconductor device and manufacturing method therefor
The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a...
US-9,941,378 Air-gap top spacer and self-aligned metal gate for vertical FETs
Methods for forming a transistor include forming a gate conductor in contact with a gate stack. The gate conductor has a top surface that meets a middle point...
US-9,941,377 Semiconductor devices with wider field gates for reduced gate resistance
Semiconductor devices with wider field gates for reduced gate resistance are disclosed. In one aspect, a semiconductor device is provided that employs a gate....
US-9,941,376 Metal gate scheme for device and methods of forming
Gate structures and methods of forming the gate structures are described. In some embodiments, a method includes forming source/drain regions in a substrate,...
US-9,941,375 Method for manufacturing a semiconductor device having silicide layers
A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a first side. A trench having a bottom is formed. The...
US-9,941,374 Contacts for highly scaled transistors
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D)...
US-9,941,373 Metal gate structure
A device comprises a metal gate structure over a substrate, wherein the metal gate structure comprises a first metal sidewall, a metal bottom layer, a first...
US-9,941,372 Semiconductor device having electrode and manufacturing method thereof
The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an electrode. An exemplary structure for a...
US-9,941,371 Selective thickening of pFET dielectric
A complementary metal-oxide semiconductor (CMOS) device and a method of fabricating a CMOS device are described. The method includes forming an interfacial...
US-9,941,370 Vertical field-effect-transistors having multiple threshold voltages
Various embodiments disclose a method for fabricating a semiconductor structure including a plurality of vertical transistors each having different threshold...
US-9,941,369 Memory cell comprising non-self-aligned horizontal and vertical control gates
The present disclosure relates to a memory cell comprising a vertical selection gate extending in a trench made in a substrate, a floating gate extending above...
US-9,941,368 Raised epitaxial LDD in MuGFETs and methods for forming the same
Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin,...
US-9,941,367 Wrap-around contact on FinFET
A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the...
US-9,941,366 Semiconductor device and manufacturing method of semiconductor device
Described herein is a semiconductor device comprising: a semiconductor substrate; a trench provided at a surface of the semiconductor substrate; a first...
US-9,941,365 Method for forming a stress-reduced field-effect semiconductor device
A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining...
US-9,941,364 High voltage semiconductor device and method of manufacturing the same
In embodiments, a high voltage semiconductor device includes a gate structure disposed on a substrate, a source region disposed at a surface portion of the...
US-9,941,363 III-V transistor device with self-aligned doped bottom barrier
A semiconductor device comprises a first layer of a substrate arranged on a second layer of the substrate the second layer of the substrate including a doped...
US-9,941,362 Method of manufacturing silicon carbide semiconductor device
A method of manufacturing a silicon carbide semiconductor device. The method includes providing an n-type semiconductor substrate having first and second...
US-9,941,361 Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device
In a method for fabricating a semiconductor substrate according to an embodiment, an SiC substrate is formed by vapor growth and C (carbon) is introduced into...
US-9,941,360 Field effect transistor and semiconductor device including the same
A field effect transistor and a semiconductor device including the same are provided. The semiconductor device may include a channel layer, which is provided on...
US-9,941,359 Semiconductor devices with superlattice and punch-through stop (PTS) layers at different depths and related methods
A semiconductor device may include a semiconductor substrate and first transistors having a first operating voltage. Each first transistor may include a first...
US-9,941,358 Semiconductor integrated circuit with guard ring
A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring...
US-9,941,357 Power MOSFET
A power MOSFET includes a substrate, a semiconductor layer, a first gate, a second gate, a thermal oxide layer, a first CVD oxide layer, and a gate oxide layer....
US-9,941,356 JFET and method for fabricating the same
A junction field effect transistor includes a substrate and a gate region having a first conductive type in the substrate. Source/drain regions of a second...
US-9,941,355 Co-integration of elastic and plastic relaxation on the same wafer
An n-doped field effect transistor (nFET) section of an integrated device logic region is provided. The nFET section includes a semiconductor substrate, a layer...
US-9,941,354 Semiconductor device comprising a first gate trench and a second gate trench
A semiconductor device includes a first gate trench and a second gate trench in a first main surface of a semiconductor substrate. A mesa is arranged between...
US-9,941,353 Structure and method for mitigating substrate parasitics in bulk high resistivity substrate technology
A structure includes a field isolation region in a high resistivity substrate, a compensation implant region under the field isolation region in the high...
US-9,941,352 Transistor with improved air spacer
A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gate stack disposed on a substrate. A gate contact is...
US-9,941,351 Vertical power transistor with deep trenches and deep regions surrounding cell array
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
US-9,941,350 Semiconductor device isolation via depleted coupling layer
A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate and having a first conductivity type, a body...
US-9,941,349 Superjunction semiconductor device with oppositely doped semiconductor regions formed in trenches
A trench etch mask is formed on a process surface of a semiconductor layer. By using the trench etch mask, both first trenches and second trenches are formed...
US-9,941,348 Method of forming a capacitor structure and capacitor structure
The present disclosure provides a method of forming a capacitor structure and a capacitor structure. A semiconductor-on-insulator substrate is provided...
US-9,941,347 Floating body contact circuit method for improving ESD performance and switching speed
Embodiments of systems, methods, and apparatus for improving ESD performance and switching time for semiconductor devices including metal-oxide-semiconductor...
US-9,941,346 Display device and semiconductor device
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation...
US-9,941,345 Organic light emitting diode display having blocking layer extending from a drain electrode
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a scan line configured to transmit a scan signal and a...
US-9,941,344 Organic light emitting display device
Embodiments relate to an organic light emitting display device according to the present disclosure including: a plurality of pixels which includes red, white,...
US-9,941,343 Area sensor and display apparatus provided with an area sensor
An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using...
US-9,941,342 Organic light emitting diode display
An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a...
US-9,941,341 Transparent display apparatus
A display apparatus includes a pixel including a first area and a second area. Light is emitted from the first area and ambient light is transmitted through the...
US-9,941,340 Organic light-emitting diode display including a shielding electrode with reduced crosstalk
An organic light-emitting diode display is disclosed. The display includes a scan line formed over a substrate and configured to carry a scan signal. First and...
US-9,941,339 Organic light-emitting diode (OLED) display
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a plurality of pixels, each including a driving thin film...
US-9,941,338 Organic light-emitting diode display and method of manufacturing the same
An organic light-emitting diode display and a method of manufacturing the same are disclosed. In one aspect, the display includes a substrate including a...
US-9,941,337 Flexible display device with wire having reinforced portion
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size...
US-9,941,336 Light emitting display device and method for fabricating the same
The light emitting display device comprises: a substrate including a plurality of pixels that are arranged in a first direction and a second direction that...
US-9,941,335 Display device
A display device is provided. A display panel includes a display area and a pad area. A connector is connected to the pad area. A PCB is connected to the...
US-9,941,334 Display device
A display device is disclosed, which includes: a pixel group including a first pixel having a red sub-pixel and a blue sub-pixel; a second pixel having a green...
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