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Patent # Description
US-9,941,333 Memory device and method of manufacturing the same
A memory device includes a first electrode line layer including a plurality of first electrode lines extending on a substrate in a first direction and being...
US-9,941,332 Semiconductor memory device and structure
A semiconductor memory, including: a first memory cell including a first transistor; a second memory cell including a second transistor; and a memory...
US-9,941,331 Device with sub-minimum pitch and method of making
A method is provided that includes forming a first level above a substrate, forming a second level above the first level, and forming a third level above the...
US-9,941,330 LEDs with three color RGB pixels for displays
Devices and methods of forming the devices are disclosed. The device includes a substrate and a color LED pixel disposed on the substrate. The color LED pixel...
US-9,941,329 Light emitting diodes (LEDs) with integrated CMOS circuits
Disclosed is a multi-color semiconductor LED display with integrated with CMOS circuit components, such as thin film transistors (TFTs). LEDs of the display are...
US-9,941,328 Optical device having mesas for light extraction enhancement
An optical device and method for fabricating an optical device. The optical device comprising: a semiconductor material comprising an active layer configured to...
US-9,941,327 Detector module for an imaging system
A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second...
US-9,941,326 Method of manufacturing an image sensor by joining a pixel circuit substrate and a logic circuit substrate and...
The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate...
US-9,941,325 Method of manufacturing solid-state image sensor
A method of manufacturing a solid-state image sensor, the method comprising preparing a structure including a substrate and an insulating member provided...
US-9,941,324 Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus
A semiconductor device includes: a thin film transistor including an oxide semiconductor layer that is formed in an island shape and contains at least one or...
US-9,941,323 Semiconductor device and method for production of semiconductor device
A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily...
US-9,941,322 Through electrode of a device substrate
A semiconductor unit includes: a first device substrate including a first semiconductor substrate and a first wiring layer, in which the first wiring layer is...
US-9,941,321 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor...
US-9,941,320 3DIC interconnect apparatus and method
An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded...
US-9,941,319 Semiconductor and optoelectronic methods and devices
A method for processing a semiconductor wafer, the method including: providing a semiconductor wafer including an image sensor pixels layer including a...
US-9,941,318 Semiconductor device and electronic apparatus including an organic material layer between a dummy lens and a...
Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover...
US-9,941,317 Solid-state image sensor and camera which can detect visible light and infrared light at a high S/N ratio
A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter...
US-9,941,316 Multi-terminal optoelectronic devices for light detection
Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image...
US-9,941,315 Photoelectric conversion device and imaging system
A photoelectric conversion device includes a photoelectric conversion unit including a first and second electrodes, a photoelectric conversion layer between the...
US-9,941,314 Phase difference detection while suppressing deterioration of resolution
The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the...
US-9,941,313 Method of manufacturing thin film transistor substrate
A method of manufacturing a thin film transistor substrate includes forming a semiconductor pattern on a substrate, wherein the semiconductor pattern includes a...
US-9,941,312 Manufacturing method for LTPS TFT substrate
The invention provides a manufacturing method for LTPS TFT substrate. After forming N+ areas on both sides of polysilicon layer, the first gate insulating...
US-9,941,311 Flexible display device and manufacturing method thereof
Disclosed herein is a flexible display device, including: a substrate that comprises a first surface and a second surface which is an opposite surface to the...
US-9,941,310 Driver circuit with oxide semiconductor layers having varying hydrogen concentrations
The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH.sub.4) and ammonia (NH.sub.3) is provided on...
US-9,941,309 Semiconductor device
To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device...
US-9,941,308 Display device and electronic device including the same
It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of...
US-9,941,307 Thin-film transistor array substrate with connection node and display device including the same
A thin-film transistor (TFT) array substrate including: a first conductive layer selected from an active layer, a gate electrode, a source electrode, and a...
US-9,941,306 Display device
To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the...
US-9,941,305 Pixel structure and fabrication method thereof
A pixel structure and a fabrication method thereof are provided, and the fabrication method includes steps as follows. A gate and a scan line connected to the...
US-9,941,304 Memory device, semiconductor device, and electronic device
A memory device does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory...
US-9,941,303 Array substrate, display panel and display device
The present application provides an array substrate, a display panel and a display device. The array substrate includes: a substrate; gate lines and data lines...
US-9,941,302 Structure and method to form defect free high-mobility semiconductor fins on insulator
A semiconductor structure is provided that includes a plurality of high mobility semiconductor material (i.e., silicon germanium alloy of III-V compound...
US-9,941,301 Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk...
Methods for eliminating the distance between a BULEX and SOI and the resulting devices are disclosed. Embodiments include providing a silicon layer on a BOX...
US-9,941,300 Structure and method for fully depleted silicon on insulator structure for threshold voltage modification
A method for fabricating a fully depleted silicon on insulator (FDSOI) device is described. A charge trapping layer in a buried oxide layer is provided on a...
US-9,941,299 Three-dimensional ferroelectric memory device and method of making thereof
A three-dimensional memory device includes an alternating stack of word lines and insulating layers, vertical semiconductor channels vertically extending...
US-9,941,298 Methods of forming integrated structures comprising vertical channel material and having conductively-doped...
Some embodiments include an integrated structure having vertically-stacked conductive levels. Upper conductive levels are memory cell levels, and a lower...
US-9,941,297 Vertical resistor in 3D memory device with two-tier stack
A vertical, columnar resistor in a semiconductor device is provided, along with techniques for fabricating such a resistor. The resistor may be provided in a...
US-9,941,296 Nonvolatile semiconductor memory device and method for manufacturing same
A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of...
US-9,941,295 Method of making a three-dimensional memory device having a heterostructure quantum well channel
A cylindrical confinement electron gas confined within a two-dimensional cylindrical region can be formed in a vertical semiconductor channel extending through...
US-9,941,294 Semiconductor device structure and method for forming the same
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes...
US-9,941,292 Semiconductor memory device and method for manufacturing same
A semiconductor memory device includes a plurality of first electrode layers stacked in a first direction; a semiconductor layer extending in the first...
US-9,941,291 Three-dimensional non-volatile memory device
A semiconductor device includes at least one first conductive layer stacked on a substrate where a cell region and a contact region are defined; at least one...
US-9,941,290 Read-only memory (ROM) device structure and method for forming the same
A read-only memory (ROM) structure is provided. The ROM device structure includes an active region formed over a substrate and a first group of word lines...
US-9,941,289 Anti-fuse type nonvolatile memory cells, arrays thereof, and methods of operating the same
An anti-fuse type nonvolatile memory cell includes a semiconductor layer having a first conductivity type, a junction region having a second conductivity type...
US-9,941,288 Static random-access memory (SRAM) cell array
A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein...
US-9,941,287 Three-dimensional static random access memory device structures
Systems and methods are provided for fabricating a static random access memory (SRAM) cell in a multi-layer semiconductor device structure. An example SRAM...
US-9,941,286 Semiconductor devices and methods for manufacturing the same
A method for manufacturing a semiconductor device includes forming first and second lower structures including selection elements on first and second chip...
US-9,941,285 Pattern forming method and semiconductor device manufacturing method using the same
A method for forming patterns includes forming an etch target layer; etching the etch target layer to form a pre-pattern having a line forming portion and a...
US-9,941,284 Semiconductor device
A semiconductor device aims to prevent a leak current from flowing between a well and a corner of an active region formed on an upper surface of another well in...
US-9,941,283 Semiconductor device having fin-type pattern
A semiconductor device is provided. The semiconductor device includes a first fin-type pattern on a substrate, a first interlayer insulating layer on the...
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