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Patent # Description
US-9,941,282 Integrated metal gate CMOS devices
A semiconductor device comprises a first semiconductor fin arranged on a substrate, the first semiconductor fin having a first channel region, and a second...
US-9,941,281 Semiconductor device
A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns;...
US-9,941,280 Semiconductor device using three dimensional channel
According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin...
US-9,941,279 Semiconductor structure having fins and method for manufacturing the same
A semiconductor structure includes a substrate, at least one active fin present on the substrate, and at least one isolation dielectric surrounding the active...
US-9,941,278 Method and apparatus for placing a gate contact inside an active region of a semiconductor
A method provides a structure having a FinFET in an Rx region, the FinFET including a channel, source/drain (S/D) regions and a gate, the gate including gate...
US-9,941,277 Semiconductor devices including increased area contacts
A semiconductor device can include a plurality of active patterns protruding from a substrate and spaced apart on the substrate by first and second distances. A...
US-9,941,276 Method of producing a semiconductor component arrangement comprising a trench transistor
A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body...
US-9,941,275 3D semiconductor device and structure
An Integrated Circuit device, including: a first layer including first single crystal transistors; a second layer overlaying the first layer, the second layer...
US-9,941,274 Semiconductor device with a switchable and a non-switchable diode region
A semiconductor device includes at least one IGBT cell region, at least one switchable free-wheeling diode region, and at least one non-switchable free-wheeling...
US-9,941,273 Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device includes: a semiconductor substrate including a trench provided in a surface of the semiconductor substrate; a trench electrode provided...
US-9,941,272 Method of producing a semiconductor device
A semiconductor body has a drift region layer, a body region layer adjoining the drift region layer, and a source region layer adjoining the body region layer...
US-9,941,271 Fin-shaped field effect transistor and capacitor structures
A fin-shaped field-effect transistor device is provided. The fin-shaped field effect transistor device may include a semiconductor substrate having a top and a...
US-9,941,270 Semiconductor device and design method of same
A semiconductor device includes a semiconductor substrate having a predetermined region in which a standard cell is disposed, and also includes: a first circuit...
US-9,941,269 Power semiconductor device including well extension region and field-limiting rings
A drift region has a first conductivity type. A well region is at least partially included in an interface area, has an end portion between the interface area...
US-9,941,268 Series resistor over drain region in high voltage device
Some embodiments relate to a semiconductor device. The semiconductor device includes a drain region and a channel region surrounding the drain region. A source...
US-9,941,267 Electro-static discharge protection circuit
An electro-static discharge (ESD) protection circuit is configured to protect circuitry during an ESD event. The ESD protection circuit includes an ESD...
US-9,941,266 Semiconductor device
A semiconductor device according to the present invention includes: a substrate; a plurality of trenches formed in the substrate; and a plurality of functional...
US-9,941,265 Circuitry with voltage limiting and capactive enhancement
Aspects of the present disclosure are directed to circuitry operable with enhanced capacitance and mitigation of avalanche breakdown. As may be implemented in...
US-9,941,264 Transient overvoltage protection device
In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device...
US-9,941,263 Semiconductor integrated circuit device
Disclosed herein is a semiconductor integrated circuit device which includes a standard cell with a plurality of fins extending in a first direction and...
US-9,941,262 Laser lift-off on isolated III-nitride light islands for inter-substrate LED transfer
A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices...
US-9,941,261 Display device
A display device is disclosed, which comprises: a first substrate; a second substrate disposed adjacent to the first substrate and partially covering the first...
US-9,941,260 Fan-out package structure having embedded package substrate
A semiconductor package structure is provided. The semiconductor package structure includes a first semiconductor package that includes a first semiconductor...
US-9,941,259 LED module and method for fabricating the same
Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding...
US-9,941,258 LED lead frame array for general illumination
An LED lead frame assembly includes a circuit strip assembly, a plastic dam member overmolded onto the circuit strip assembly and a LED chip assembly disposed...
US-9,941,257 Embedded stacked die packages and related methods
Forming a semiconductor package includes coupling electrically conductive elements with a substrate, coupling a first die with one or more of the electrically...
US-9,941,256 Inverse diode stack
A packaged inverse diode device exhibits superior commutation robustness. The device includes a stack of inverse diodes disposed within a housing. Each adjacent...
US-9,941,255 Power semiconductor module
A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor...
US-9,941,254 Semiconductor device
A semiconductor device 10 includes: multi-layered substrates 12 each having a circuit board 12c; control terminals 14 whose one end is fixed on the circuit...
US-9,941,253 Semiconductor packages including interconnectors and methods of fabricating the same
A semiconductor package and or method of fabricating a semiconductor package may be provided. The semiconductor package may include a package substrate. The...
US-9,941,252 Semiconductor package
A semiconductor package includes a first semiconductor chip including a through silicon via in the first semiconductor chip and a first trench portion in an...
US-9,941,251 3DIC packages with heat dissipation structures
A package includes a first die and a second die underlying the first die and in a same first die stack as the first die. The second die includes a first portion...
US-9,941,250 Chip stack structures that implement two-phase cooling with radial flow
A package structure to implement two-phase cooling includes a chip stack disposed on a substrate, and a package lid that encloses the chip stack. The chip stack...
US-9,941,249 Multi-wafer stacking by Ox-Ox bonding
A stacked semiconductor device and a method of forming the stacked semiconductor device are provided. A plurality of integrated circuits are bonded to one...
US-9,941,248 Package structures, pop devices and methods of forming the same
Package structures, PoP devices and methods of forming the same are disclosed. A package structure includes a first chip, a redistribution layer structure, a...
US-9,941,247 Stack semiconductor device and memory device with driving circuits connected to through-silicon-vias (TSV) in...
A memory device including a stack semiconductor device including; an upper substrate vertically stacked on a lower substrate, the upper substrate including N...
US-9,941,246 Electronic assembly that includes stacked electronic devices
An electronic assembly that includes a first electronic device. The first electronic device includes a cavity that extends into a back side of the first...
US-9,941,245 Integrated circuit packages including high density bump-less build up layers and a lesser density core or...
In some embodiments, integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate are presented....
US-9,941,244 Protective layer for contact pads in fan-out interconnect structure and method of forming same
In accordance with a method embodiment includes providing a die having a contact pad on a top surface and forming a conductive protective layer over the die and...
US-9,941,243 Wafer-to-wafer bonding structure
A wafer-to-wafer bonding structure includes a first wafer including a first conductive pad in a first insulating layer and a first barrier layer surrounding a...
US-9,941,242 Unpacked structure for power device of radio frequency power amplification module and assembly method therefor
A power device without a package structure in a radio frequency power amplifier module and an assembly method for a radio frequency power amplifier module are...
US-9,941,241 Method for wafer-wafer bonding
A first semiconductor structure including a first bonding oxide layer having a first metallic bonding structure embedded therein and a second semiconductor...
US-9,941,240 Semiconductor chip scale package and manufacturing method thereof
A surface mounting semiconductor component includes a semiconductor device, a circuit board, a number of first solder bumps, and a number of second solder...
US-9,941,239 Electrostatic discharge protection apparatus and process
In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least...
US-9,941,238 Wiring with external terminal
Apparatuses for providing external terminals of a semiconductor device are described. An example apparatus includes: a connection wiring of a ring-shape having...
US-9,941,237 Semiconductor device and method for making semiconductor device
A semiconductor device includes: a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a...
US-9,941,236 Semiconductor device having wire bonding connection and method for manufacturing the same
To prevent cracks of an interlayer insulation film at the time of wire bonding while maintaining adhesion of an aluminum pad electrode and the interlayer...
US-9,941,235 Power module substrate with Ag underlayer and power module
A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag...
US-9,941,234 Integrated packaging of multiple double sided cooling planar bond power modules
An integrated double sided cooled power module has one or multiple phase legs configuration including one or more planar power packages, each planar power...
US-9,941,233 Electronic device and mounting structure of the same
An electronic device includes an electronic element, a plurality of first sub-electrodes arrayed in a first direction, a plurality of second sub-electrodes...
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