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Patent # Description
US-9,947,433 Thermoplastic resin composition and molded product using the same
A thermoplastic resin composition includes 0.1 to 20 parts by weight of a carbon black relative to 100 parts by weight of a thermoplastic resin, wherein the...
US-9,947,432 Electrically conductive materials formed by electrophoresis
A method of forming an electrically conductive composite is disclosed that includes the steps of providing a first dielectric material and a second conductive...
US-9,947,431 Anisotropic films templated using ultrasonic focusing
An anisotropic composite film includes a plurality of effectively parallel lines of particles with a polymeric or other solid matrix. The composite films are...
US-9,947,430 Transparent conductive film comprising silver nanowires
A transparent conductive film. The film comprises a transparent polymer comprising fused latex polymer particles. A plurality of nanowires comprising silver are...
US-9,947,429 Ag alloy film for reflecting electrode or wiring electrode, reflecting electrode or wiring electrode, and Ag...
An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity...
US-9,947,428 Atomic beam source
An atomic beam source includes a tubular cathode that includes an emission portion that includes an emission port through which an atomic beam can be emitted, a...
US-9,947,427 Scintillation crystal including a co-doped sodium halide, and a radiation detection apparatus including the...
A scintillation crystal can include a sodium halide that is co-doped with thallium and another element. In an embodiment, the scintillation crystal can include...
US-9,947,426 High voltage supply for compact radiation generator
Disclosed is a radiation logging tool, comprising a tool housing; a compact generator that produces radiation; a power supply coupled to the compact generator;...
US-9,947,425 Method for reducing the radioactive contamination of the surface of a component used in a nuclear reactor
The invention relates to a method for reducing the radioactive contamination of the surface of a component used in a nuclear reactor, which component is in...
US-9,947,424 Coating type radiation-shielding material and radiation-shielding elastomer material
An object of the invention is to provide a radiation-shielding material that has a high radiation-shielding capability and can be easily coated, molded and...
US-9,947,423 Nanofuel internal engine
A nanofuel engine including an inventive nanofuel internal engine, whereby nuclear energy is released in the working fluid and directly converted into useful...
US-9,947,422 Control method for a pressurized water nuclear reactor
This invention relates to a control method for a pressurized water nuclear reactor, which comprises a core generating thermal power and means of acquiring...
US-9,947,421 Nuclear reactor with liquid metal coolant
A nuclear reactor with a liquid metal coolant includes a housing having a separating shell disposed therein. In the annular space between the housing and the...
US-9,947,420 Magnetic field plasma confinement for compact fusion power
In one embodiment, a fusion reactor includes a plurality of internal magnetic coils suspended within an enclosure, one or more center magnetic coils coaxial...
US-9,947,419 Apparatus and method for implementing design for testability (DFT) for bitline drivers of memory circuits
A first bitline driver includes a multiplexer for outputting data and write mask signals in functional mode, and test vector signal in test mode; a latch to...
US-9,947,418 Boosted channel programming of memory
Methods of operating a memory include generating a programming pulse for a programming operation having a plurality of steps prior to a program voltage level of...
US-9,947,417 Memory management method, memory storage device and memory controlling circuit unit
A memory management method, a memory storage device and a memory controlling circuit unit are provided. The method includes: programming data into a plurality...
US-9,947,416 Nonvolatile memory device, operating method thereof and memory system including the same
A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection...
US-9,947,415 Nonvolatile semiconductor memory device having a control circuit that controls voltage applied to non-selected...
A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control...
US-9,947,414 Nonvolatile memory device and operating method thereof
An operating method of a nonvolatile memory device is provided. The nonvolatile memory device includes first and second page buffers, and first and second bit...
US-9,947,413 Method of initializing and programming 3D non-volatile memory device
A method of initializing and programming a 3D non-volatile memory device includes applying a first program voltage to a selected string selection line coupled...
US-9,947,412 Data writing method, memory control circuit unit and memory storage apparatus
A data writing method for a rewritable non-volatile memory module is provided. The method includes recording a plurality of characteristic parameters...
US-9,947,411 Memory system including a memory chip configured to receive an erase suspend command and a program suspend...
A non-volatile semiconductor memory device includes a memory cell array and a control circuit. A control circuit performs an erase operation providing a memory...
US-9,947,410 Non-volatile semiconductor memory device
A non-volatile semiconductor memory device is provided. A determination circuit 200 used to determine the suspected qualification is connected with a plurality...
US-9,947,409 Flash memory
In order to reduce the manufacturing cost, a flash memory includes a memory cell array formed by a plurality of memory cells arranged in a matrix shape; a...
US-9,947,408 Semiconductor memory device that applies same voltage to two adjacent word lines for access
A semiconductor memory device includes a block of memory cells including first, second, and third memory cells, a first word line electrically connected to a...
US-9,947,407 Techniques for programming of select gates in NAND memory
In a non-volatile memory formed according to a NAND-type architecture that has, on one or both ends of the NAND strings, multiple select gates including some...
US-9,947,406 Dynamic tag compare circuits employing P-type field-effect transistor (PFET)-dominant evaluation circuits for...
Dynamic tag compare circuits employing P-type Field-Effect Transistor (PFET)-dominant evaluation circuits for reduced evaluation time, and thus increased...
US-9,947,405 Memristive dot product engine with a nulling amplifier
A method of obtaining a dot product using a memristive dot product engine with a nulling amplifier includes applying a number of programming voltages to a...
US-9,947,404 Resistive memory apparatus, selective write circuit therefor, and operation method thereof
A resistive memory apparatus may include a memory cell array and a selective write circuit. The memory cell array may include a plurality of resistive memory...
US-9,947,403 Method for operating non-volatile memory device and applications thereof
A method for operating a resistance switching memory device is provided, wherein the method includes a first program process, and the first program process...
US-9,947,402 Method, system and device for non-volatile memory device operation
Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed...
US-9,947,401 Peak current management in non-volatile storage
Technology is described for keeping current (e.g., peak power supply current or ICC) in a non-volatile memory system within a target while maintaining high...
US-9,947,400 Methods for enhanced state retention within a resistive change cell
A method for improving the stability of a resistive change cell is disclosed. The stability of a resistive change memory cell--that is, the tendency of the...
US-9,947,399 Updating resistive memory
Data is initially programmed in a portion of ReRAM in parallel. Subsequently, one or more ReRAM cells in the portion are determined to contain first data that...
US-9,947,398 Semiconductor memory device and operation method thereof
A semiconductor memory device includes: a memory array including a plurality of memory cells, the memory cells being in any of a high resistance state (HRS) and...
US-9,947,397 Crosspoint array decoder
Example implementations disclosed herein can be used to decode memory elements in a crosspoint array. In one example implementation, crosspoint array decoder...
US-9,947,396 Nonvolatile storage device and method of controlling the same
To improve a reading speed and a writing speed while preventing occurrence of disturbance in a resistance storage element, specifically, a nonvolatile storage...
US-9,947,395 Programming techniques for non-volatile memories with charge trapping layers
Techniques are presented for the programming of a non-volatile memory in which multi-state memory cells use a charge trapping layer. When writing data onto a...
US-9,947,394 Nonvolatile memory device including page buffer and method for reading data without a dumping process for...
A nonvolatile memory device including a page buffer and a method of operating the nonvolatile memory device, the method including performing a first sensing...
US-9,947,393 Semiconductor integrated circuit device
A semiconductor integrated circuit device includes a control unit which causes a column selection circuit to separate bit line pairs from a common bit line pair...
US-9,947,392 Memory device sensing circuit
A memory device includes a first memory array comprising a first bit cell configured to store a first logical state; and a reference signal provision (RSP)...
US-9,947,391 SRAM based physically unclonable function and method for generating a PUF response
A physically unclonable function (PUF) is implemented in a plurality of SRAM cells. In a method for generating a PUF response, a logic zero is first written to...
US-9,947,390 Structure and methods of operating two identical 4T random access memories storing the same data
The random access memory includes: two identical memory cell arrays, a data write circuit and a data read circuit. Array structures of the two identical memory...
US-9,947,389 Single ended memory device
A memory device includes a memory cell that is configured to store a data bit, comprising at least one read transistor that is configured to form either a...
US-9,947,388 Reduced swing bit-line apparatus and method
Described is an apparatus which comprises: a bit-line (BL) read port; a first local bit-line (LBL) coupled to the BL read port; a second LBL; and one or more...
US-9,947,387 Systems and methods for reducing standby power in floating body memory devices
Methods, devices, arrays and systems for reducing standby power for a floating body memory array. One method includes counting bits of data before data enters...
US-9,947,386 Thermal aware data placement and compute dispatch in a memory system
A method of managing thermal levels in a memory system may include determining an expected thermal level associated with each of a plurality of locations in a...
US-9,947,385 Data sense amplification circuit and semiconductor memory device including the same
A semiconductor memory device includes: a first memory cell coupled to a first bit line; a second memory cell coupled to a second bit line; and a sense...
US-9,947,384 Semiconductor device relating to generate target address to execute a refresh operation
A semiconductor device may be provided. The semiconductor device may include a target address storage circuit and a first row address generation circuit. The...
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