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Patent # Description
US-9,954,138 Light emitting element
An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first...
US-9,954,137 Photodetector and methods of manufacture
Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The...
US-9,954,136 Cassette optimized for an inline annealing system
An apparatus for carrying a plurality of photovoltaic structures is provided. The apparatus can include a pair of end plates, a set of stationary posts coupling...
US-9,954,135 Solar cell manufacturing method
A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main...
US-9,954,134 Optical biosensor and manufacturing method thereof
An optical biosensor, and a method of manufacturing the same, includes a first layer, a second layer stacked on the first layer, a first grating coupler within...
US-9,954,133 P-type chalcogenide and N-type silicon heterojunction infrared photodiodes and method of manufacturing thereof
A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type...
US-9,954,132 Systems and methods for detectors having improved internal electrical fields
A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The...
US-9,954,131 Optoelectronic devices including heterojunction and intermediate layer
Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium...
US-9,954,130 Thin film type solar cell and fabrication method thereof
A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the...
US-9,954,129 Systems for efficient photon upconversion
Described herein are materials and systems for efficient upconversion of photons. The materials may be disposed in a system comprising two semiconductor...
US-9,954,128 Structures for increased current generation and collection in solar cells with low absorptance and/or low...
The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector...
US-9,954,127 Solar module clamp
A solar module configured in a frame assembly with multi-configuration attachment member(s), which has locking and unlocking characteristics.
US-9,954,126 Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
Various stamping methods may reduce defects and increase throughput for manufacturing metamaterial devices. Metamaterial devices with an array of photovoltaic...
US-9,954,125 Light spot position detector with an array of nanorods
Various examples are provided for pillar array photo detectors. In one example, among others, a photo detection system includes an array of substantially...
US-9,954,124 Thermo-compensated silicon photo-multiplier with on-chip temperature sensor
A silicon photomultiplier (SiPM) device is provided with a SiPM matrix and a temperature compensation circuit fabricated on a substrate. The temperature...
US-9,954,123 Multifunctional nanostructured metal-rich metal oxides
A transparent conductive oxide (TCO) material includes a metal-rich metal oxide having an average formula (M1, M2 . . . Mn).sub.yO.sub.x, where M1, M2 and Mn...
US-9,954,122 Solar cell apparatus and method of fabricating the same
A solar cell apparatus according to the embodiment includes the steps of a support substrate; a back electrode layer on the support substrate; a light absorbing...
US-9,954,121 Monolithic integration techniques for fabricating photodetectors with transistors on same substrate
Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a...
US-9,954,120 Semiconductor device and a manufacturing method thereof
In a semiconductor device including a split gate type MONOS memory, and a trench capacitor element having an upper electrode partially embedded in trenches...
US-9,954,119 Zener diode having an adjustable breakdown voltage
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of...
US-9,954,118 Method of producing a high-voltage semiconductor drift device
The method comprises implanting a deep well of a first type of electrical conductivity provided for a drift region in a substrate of semiconductor material, the...
US-9,954,117 Semiconductor device and display device including the semiconductor device
A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is...
US-9,954,116 Electrostatically enhanced fins field effect transistors
Non-planar semiconductor devices including semiconductor fins or stacked semiconductor nanowires that are electrostatically enhanced are provided. The...
US-9,954,115 Semiconductor device and method for manufacturing the same
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a...
US-9,954,114 Semiconductor device including oxide semiconductor layer
The electrical characteristics of a transistor including an oxide semiconductor layer are varied by influence of an insulating film in contact with the oxide...
US-9,954,112 Semiconductor device and manufacturing method thereof
A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating...
US-9,954,111 Semiconductor device
Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a...
US-9,954,110 EL display device and electronic device
Provided is an EL display device which is provided with a power supply line driver circuit including a transistor having capability in supplying a large amount...
US-9,954,109 Vertical transistor including controlled gate length and a self-aligned junction
A vertical transistor includes a gate structure interposed between a proximate spacer doped with a first dopant-type and a distal spacer doped with the first...
US-9,954,108 Semiconductor device including fin shaped structure including silicon germanium layer
A semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure includes a top portion...
US-9,954,107 Strained FinFET source drain isolation
A semiconductor structure, such as a strained FinFETs, includes a strain relief buffer (SRB) layer isolated and separated from a source and a drain by a second...
US-9,954,106 III-V fin on insulator
A method of forming a semiconductor structure in which a III-V compound semiconductor channel fin portion is formed on a dielectric material is provided. The...
US-9,954,105 Method and structure for FinFET devices
A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and...
US-9,954,104 Multiwidth finFET with channel cladding
An improved structure and methods of fabrication for finFET devices utilizing a cladding channel are disclosed. A staircase fin is formed where the fin...
US-9,954,103 Bottom spacer formation for vertical transistor
A bilayer of silicon dioxide and silicon nitride is formed on exposed surfaces of at least one semiconductor fin having a bottom source/drain region located at...
US-9,954,102 Vertical field effect transistor with abrupt extensions at a bottom source/drain structure
A semiconductor structure is provided that includes a vertical transport field effect transistor located on sidewall surfaces of a semiconductor fin. The...
US-9,954,101 Precise junction placement in vertical semiconductor devices using etch stop layers
A semiconductor device is provided that includes a first of a source region and a drain region comprised of a first semiconductor material, wherein an etch stop...
US-9,954,100 Method and apparatus for high voltate transistors
A method includes forming a gate spacer along sidewalls of a gate structure, forming a source region and a drain region on opposite sides of the gate structure,...
US-9,954,099 Transistor structure
A transistor structure including a gate, a first dielectric layer, a first contact and a second contact is provided. The gate is disposed on a substrate. The...
US-9,954,098 Semiconductor structure and method of manufacturing the same
A semiconductor structure and a method of manufacturing the semiconductor structure are provided. The semiconductor structure includes at least a substrate, an...
US-9,954,097 Methodology and structure for field plate design
The present disclosure relates to a transistor device having a field plate, and a method of formation. In some embodiments, the transistor device has a gate...
US-9,954,096 Switching device and method of manufacturing the same
A switching device includes a semiconductor substrate; a trench; a conductor layer extending in a longitudinal direction of the trench so as to be in contact...
US-9,954,095 Semiconductor device and method of manufacturing same
To provide a semiconductor device less affected by noise without making a manufacturing process more complicated and increasing a chip area. The device has a...
US-9,954,094 Semiconductor device manufacturing method and semiconductor device
In order to improve the performance of a semiconductor device, a p type impurity is ion implanted into an area of an n type semiconductor film that is...
US-9,954,093 Method of manufacturing a super junction semiconductor device and super junction semiconductor device
A semiconductor device is manufactured by: i) forming a mask on a process surface of a semiconductor layer, elongated openings of the mask exposing part of the...
US-9,954,092 Semiconductor device, power circuit, and computer
A semiconductor device according to an embodiment includes a nitride semiconductor layer and an insulating layer including an oxide film or an oxynitride film...
US-9,954,091 Compound semiconductor device and method of manufacturing the same
A compound semiconductor device includes: a substrate; a channel layer over the substrate; a carrier supply layer over the channel layer; a gate electrode, a...
US-9,954,090 Monolithic integration of group III nitride epitaxial layers
A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the...
US-9,954,089 Low dislocation density III-nitride semiconductor component
There are disclosed herein various implementations of a semiconductor component including a protrusion propagation body. The semiconductor component includes a...
US-9,954,088 Semiconductor device fabrication
There is provided a method for fabricating a semiconductor device having the following structure, and comprising the steps of growing a nucleation layer on a...
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