Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,954,087 Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer...
US-9,954,086 Semiconductor device having multiple field stop layers
A semiconductor device of the present invention is structured such that in a surface layer of a first principal surface of a semiconductor substrate, an n-type...
US-9,954,085 Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same
A tunnel field-effect transistor device includes a p-type GaN source layer, an ntype GaN drain layer, and an interlayer interfaced between the source-layer and...
US-9,954,084 Method for manufacturing semiconductor device
In a transistor including an oxide semiconductor film, a metal oxide film for preventing electrification which is in contact with the oxide semiconductor film...
US-9,954,083 Semiconductor structures having increased channel strain using fin release in gate regions
A method of introducing strain in a channel region of a FinFET device includes forming a fin structure on a substrate, the fin structure having a lower portion...
US-9,954,082 Method of fabricating an embedded nonvolatile memory device
A method of fabricating an embedded nonvolatile memory device is disclosed. A semiconductor substrate having thereon a fin body protruding from an isolation...
US-9,954,081 Fin field effect transistor, semiconductor device and fabricating method thereof
A substrate is patterned to form trenches and a semiconductor fin between the trenches. Insulators are formed in the trenches and a first dielectric layer is...
US-9,954,080 3D integrated circuit device
A 3D integrated circuit device, including: a first transistor; a second transistor; and a third transistor, where the third transistor is overlaying the second...
US-9,954,079 LDMOS power semiconductor device and manufacturing method of the same
Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first...
US-9,954,078 Method for manufacturing a semiconductor device having a super junction MOSFET
A method of manufacturing a super junction MOSFET, which includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region...
US-9,954,077 Apparatus and method for multiple gate transistors
A method comprises etching away an upper portion of a substrate to form a trench between two adjacent isolation regions, wherein the substrate has a first...
US-9,954,076 Semiconductor device and manufacturing method thereof
A semiconductor device includes first and second FETs including first and second channel regions, respectively. The first and second FETs include first and...
US-9,954,075 Thyristor random access memory device and method
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased...
US-9,954,074 Insulated gate bipolar transistor and manufacturing method therefor
An insulated gate bipolar transistor and a manufacturing method therefor. The insulated gate bipolar transistor comprises a semiconductor substrate (1) of a...
US-9,954,073 Method for manufacturing silicon carbide semiconductor device
A method for manufacturing a SiC semiconductor device includes: forming recesses to be separated from each other on a cross section in parallel to a surface of...
US-9,954,072 Silicon-carbide semiconductor device and manufacturing method thereof
A silicon-carbide semiconductor device that relaxes field intensity in a gate insulating film, and that has a low ON-resistance. The silicon-carbide...
US-9,954,071 Method for preparing titanium-aluminum alloy thin film
A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a...
US-9,954,070 Thin film transistor and manufacturing method thereof, display device
A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active...
US-9,954,069 Semiconductor device and method of forming vertical structure
A semiconductor device includes a source/drain region, a barrier layer, and an interlayer dielectric. The barrier layer surrounds the source/drain region. The...
US-9,954,068 Method of forming a transistor, method of patterning a substrate, and transistor
A method of forming a transistor having a gate electrode includes forming a sacrificial layer over a semiconductor substrate, forming a patterning layer over...
US-9,954,067 Semiconductor device and manufacturing method thereof
A semiconductor device includes a gate structure on a substrate; a protection layer on the gate structure; a source/drain region adjacent to the gate structure;...
US-9,954,066 Semiconductor devices and fabricating methods thereof
Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an...
US-9,954,065 Method of forming a semiconductor device and semiconductor device
In accordance with a method of forming a semiconductor device, an auxiliary structure is formed at a first surface of a silicon semiconductor body. A...
US-9,954,063 Stacked planar double-gate lamellar field-effect transistor
A method of making a field-effect transistor device includes providing a substrate with a fin stack having: a first sacrificial material layer on the substrate,...
US-9,954,062 Stacked planar double-gate lamellar field-effect transistor
A method of making a field-effect transistor device includes providing a substrate with a fin stack having: a first sacrificial material layer on the substrate,...
US-9,954,061 Method of forming semiconductor device having multi-channel
A semiconductor device includes an isolation pattern on a substrate, the isolation pattern having a lower insulating pattern on the substrate, and a spacer to...
US-9,954,060 Method for manufacturing a nanowire structure
The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled...
US-9,954,059 Semiconductor wafer and method of manufacturing semiconductor element
A semiconductor wafer is provided with a thick region extending along its outer circumferential surface and being greater in thickness than its central region....
US-9,954,058 Self-aligned air gap spacer for nanosheet CMOS devices
A semiconductor structure is provided that contains a plurality of vertically stacked and spaced apart semiconductor nanosheets in which an inner dielectric...
US-9,954,057 Semiconductor device and method of manufacturing the same
A semiconductor device having a high and stable operating voltage and a method of manufacturing the same, the semiconductor device including: a substrate having...
US-9,954,056 Semiconductor device with superjunction structure and transistor cells in a transition region along a...
A semiconductor device includes a transistor cell region and a transition region. The transistor cell region includes a first portion of a super junction...
US-9,954,055 Vertical power MOSFET device
A semiconductor device includes a layer having first and second surfaces and a first type first region, a second type second region in the layer between the...
US-9,954,054 Silicon carbide semiconductor device and method for manufacturing the same
A fourth impurity region includes a first region facing a bottom portion of a trench and a part of a second impurity region and a second region facing the...
US-9,954,053 Semiconductor device and method of manufacturing semiconductor device
A method of manufacturing a semiconductor device, including implanting hydrogen atoms from a second principal surface of a semiconductor substrate, forming a...
US-9,954,052 Semiconductor device having buffer layer and method of forming the same
A semiconductor device is provided as follows. A substrate includes an NMOS region and a PMOS region. A first trench and a second trench are disposed in the...
US-9,954,051 Structure and method of fabricating three-dimensional (3D) metal-insulator-metal (MIM) capacitor and resistor...
Methods of processing a substrate include: providing a substrate having a polymer dielectric layer, a metal pad formed within the polymer dielectric layer and a...
US-9,954,050 Precise/designable FinFET resistor structure
A resistive material is formed straddling over each semiconductor fin that extends upward from a surface of a substrate. The resistive material is then...
US-9,954,049 Circular display device and manufacturing method therefor
The present invention relates to a circular display device including: a substrate (21) having a circular shape; a plurality of data lines (15) formed on the...
US-9,954,048 Organic light emitting diode display device with reduced manufacturing cost
An organic light emitting display device includes: a substrate; a semiconductor on the substrate and including a switching channel of a switching transistor and...
US-9,954,046 Display apparatus, manufacturing method of display apparatus, and electronic device
A display apparatus including: a display region provided with a plurality of pixel portions; wires installed to the respective pixel portions within the display...
US-9,954,045 Electroluminescence device and method for producing same
Provided is an organic EL display device (electroluminescence device) including a TFT substrate (substrate) and an organic EL element (electroluminescence...
US-9,954,044 Display apparatus
A display apparatus includes a first substrate including a channel-forming area, a second substrate facing the first substrate, a thin-film transistor disposed...
US-9,954,043 Flexible organic light emitting diode display having edge bending structure
The present disclosure relates to a flexible organic light emitting diode display having an edge bending structure. The organic light emitting diode display...
US-9,954,042 Organic light-emitting diode display apparatus and method of manufacturing the same
An organic light-emitting diode (OLED) display apparatus including a substrate, an insulation layer on the substrate, and an align mark formed of an insulation...
US-9,954,041 Organic electroluminescence display device
An organic electroluminescence display device includes a substrate; a thin film transistor that is formed on the substrate; a light emitting region that has a...
US-9,954,040 Organic light-emitting display apparatus
Provided are an organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes a display...
US-9,954,039 Organic light emitting display device
An organic light emitting display device can include a substrate; an anode electrode on the substrate; an organic emitting layer on the anode electrode; a...
US-9,954,038 Organic light-emitting device having a perovskite structure in a charge generation layer
An organic light-emitting device according to an embodiment of the present disclosure includes a first electrode, a second electrode opposite to the first...
US-9,954,037 Display device, method of manufacturing the same, display method, and wearable device
The present disclosure discloses a display device, a method of manufacturing the same, a display method, and a wearable device. The display includes a first...
US-9,954,036 Display device
A display device includes plural unit areas each of which includes low definition pixels as sub-pixels larger than a specified standard and high definition...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.