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Patent # Description
US-9,960,286 Solar cell bus bars
A bus bar for a silicon solar cell. The bus bar is a strip of electrically conductive material with a plurality of protrusions extending from at least one side...
US-9,960,285 Contact structure
One or more techniques or systems for forming a contact structure for a deep trench capacitor (DTC) are provided herein. In some embodiments, a contact...
US-9,960,284 Semiconductor structure including a varactor
A semiconductor structure includes a varactor and a field effect transistor. The varactor includes a body region that includes a semiconductor material and a...
US-9,960,283 Thin-film transistor
Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an...
US-9,960,282 Crystallization method for oxide semiconductor layer, semiconductor device manufactured using the same, and...
A method for manufacturing a semiconductor device is discussed. The method includes forming a gate electrode on a substrate, forming a gate insulating film over...
US-9,960,281 Metal oxide thin film transistor with source and drain regions doped at room temperature
Thin film transistors are provided that include a metal oxide active layer with source and drain regions having a reduced resistivity relative to the metal...
US-9,960,280 Semiconductor device
A transistor with stable electric characteristics is provided. An aluminum oxide film containing boron is formed in order to prevent hydrogen from diffusing...
US-9,960,279 Semiconductor device and manufacturing method thereof
Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using...
US-9,960,278 Manufacturing method of semiconductor device
To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide...
US-9,960,277 Method for producing semiconductor device
A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer on a...
US-9,960,276 ESL TFT substrate structure and manufacturing method thereof
The present invention provides an ESL TFT substrate structure and a manufacturing method thereof. In the ESL TFT substrate structure, an etch stop layer (5)...
US-9,960,275 Method of fabricating air-gap spacer for N7/N5 finFET and beyond
Embodiments disclosed herein relate to an improved transistor with reduced parasitic capacitance. In one embodiment, the transistor device includes a...
US-9,960,274 FinFET device for device characterization
FinFET devices, along with methods for fabricating such devices, are disclosed herein for facilitating device characterization. An exemplary FinFET device...
US-9,960,273 Integrated circuit structure with substrate isolation and un-doped channel
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate having a first region and a second region; a first...
US-9,960,272 Bottom contact resistance reduction on VFET
Embodiments are directed to a method and resulting structures for a vertical field effect transistor (VFET) having a reduced bottom contact resistance. A...
US-9,960,271 Method of forming vertical field effect transistors with different threshold voltages and the resulting...
An integrated circuit and method are disclosed. In the method, a stack of sacrificial layers is formed on a semiconductor layer such that a first portion of the...
US-9,960,270 Semiconductor devices and method for manufacturing semiconductor devices
A method for manufacturing a semiconductor device includes: forming a recess in a semiconductor substrate, the recess having a bottom and a sidewall extending...
US-9,960,269 Semiconductor device and method of manufacturing the same
A semiconductor device according to one embodiment includes a semiconductor substrate having a main surface and a back surface opposite to the main surface, a...
US-9,960,268 Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor device
A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift...
US-9,960,267 Semiconductor device
In a semiconductor device provided with a MOSFET part and a gate pad part defined on a semiconductor substrate which is formed by laminating a low resistance...
US-9,960,266 Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors
Passivated AlGaN/GaN HEMTs having no plasma damage to the AlGaN surface and methods for making the same. In a first embodiment, a thin HF SiN barrier layer is...
US-9,960,265 III-V semiconductor device and method therefor
In one embodiment, a III-V high electron mobility semiconductor device includes a semiconductor substrate including a GaN layer, an AlGaN layer on the GaN layer...
US-9,960,264 High electron mobility transistor
A high electron mobility transistor includes a first III-V compound layer, a second III-V compound layer, a source electrode, a drain electrode, a gate...
US-9,960,263 Field effect transistor and method of manufacturing the same
A field effect transistor according to the present invention includes a semiconductor layer including a groove, an insulating film formed on an upper surface of...
US-9,960,262 Group III--nitride double-heterojunction field effect transistor
A semiconductor structure having a buffer layer, a pseudomorphic, impurity doped, back-barrier layer disposed on the buffer layer, a channel layer disposed on...
US-9,960,261 Method for manufacturing semiconductor device
A transistor with stable electrical characteristics is provided. Provided is a method for manufacturing a semiconductor device that includes, over a substrate,...
US-9,960,260 Metal oxide thin film transistor and a preparation method thereof
A Metal Oxide Thin Film Transistor (MOTFT) and a preparation method thereof are provided. The preparation method includes the following steps in turn: Step a: a...
US-9,960,259 Semiconductor device, method for manufacturing same, power conversion device, three-phase motor system,...
An object of the present invention is to provide high-performance highly-reliable power semiconductor device. The semiconductor device according to the present...
US-9,960,258 Methods of forming transistor gates
Some embodiments include methods of forming charge storage transistor gates and standard FET gates in Which common processing is utilized for fabrication of at...
US-9,960,257 Common fabrication of multiple FinFETs with different channel heights
Commonly fabricated FinFET type semiconductor devices with different (i.e., both taller and shorter) heights of an entirety of or only the channel region of...
US-9,960,256 Merged gate and source/drain contacts in a semiconductor device
Provided are approaches for forming merged gate and source/drain (S/D) contacts in a semiconductor device. Specifically, one approach provides a dielectric...
US-9,960,255 Method for manufacturing thin film transistor
A method for manufacturing a thin film transistor is provided. The method comprises depositing sequentially a gate insulating layer and a gate metal layer on a...
US-9,960,254 Replacement metal gate scheme with self-alignment gate for vertical field effect transistors
A method is presented for forming a semiconductor structure. The method includes forming a fin structure over a substrate, forming a dummy gate over the fin...
US-9,960,253 Chemically sensitive sensor with lightly doped drains
A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor....
US-9,960,252 Method to improve reliability of replacement gate device
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k...
US-9,960,251 ESD protection structure and method of fabrication thereof
An ESD protection structure comprising a first semiconductor region of a first doping type, a second semiconductor region of the first doping type, a...
US-9,960,250 Power device and method of manufacturing the same
Provided are a power device having an improved field stop layer and a method of manufacturing the same. The method can include performing a first ion implant...
US-9,960,249 Semiconductor heterobarrier electron device and method of making
A method of substantially offsetting polarization charges in an electronic device having a heterobarrier comprising providing a substrate; providing at least...
US-9,960,248 Fin-based RF diodes
Methods for forming a fin-based RF diode with improved performance characteristics and the resulting devices are disclosed. Embodiments include forming fins...
US-9,960,247 Schottky barrier structure for silicon carbide (SiC) power devices
A method for fabricating a silicon carbide power device may include steps of: forming a first n-type silicon carbide layer on top of a second n-type silicon...
US-9,960,246 Semiconductor structure with insertion layer and method for manufacturing the same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the...
US-9,960,245 Transistor device having protruding portion from channel portion
A transistor device including a semiconductor material layer, a gate layer, and an insulation layer between the gate layer and the semiconductor material layer...
US-9,960,244 Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for...
A field effect transistor includes a substrate, an epitaxial layer, a remnant-oxide layer, an electrode, a surrounding-oxide layer, a surrounding-nitride layer,...
US-9,960,243 Semiconductor device with stripe-shaped trench gate structures and gate connector structure
A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate...
US-9,960,242 Reduced size split gate non-volatile flash memory cell and method of making same
A reduced size non-volatile memory cell array is achieved by forming first trenches in an insulation layer in the row direction, filling the first trenches with...
US-9,960,241 Semiconductor device for manufacturing
A semiconductor device includes an active pattern protruding from a substrate, gate structures crossing over the active pattern, gate spacers on sidewalls of...
US-9,960,240 Low resistance contact structures for trench structures
An electrical device including at least one contact surface and an interlevel dielectric layer present atop the electrical device, wherein the interlevel...
US-9,960,239 Electronic device
An electronic device is presented; the device comprises an electrode structure located in electrical contact with a semiconducting element. The electrode...
US-9,960,238 Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These...
US-9,960,237 Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench...
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