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Patent # Description
US-9,966,446 Semiconductor device and method for fabricating the same
There is provided a semiconductor device to enhance operating characteristics by reducing parasitic capacitance between a gate electrode and other nodes. The...
US-9,966,445 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes first, a second, and third semiconductor layers respectively made of a nitride semiconductor and stacked on a substrate, a drain...
US-9,966,444 Thin film transistor, display panel and display apparatus
Disclosed is a thin film transistor, including a gate electrode, a source electrode and a drain electrode. The source electrode includes a loop structure with...
US-9,966,443 Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These...
US-9,966,442 Semiconductor device, method of manufacturing semiconductor device, inverter circuit, driving device, vehicle,...
A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer including carbon, the silicon oxide layer including...
US-9,966,441 Semiconductor device with two-dimensional electron gas
A semiconductor device, including a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer...
US-9,966,440 Tin doped III-V material contacts
Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be...
US-9,966,439 Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same
A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the...
US-9,966,438 Method of doped germanium formation
Implementations described herein generally relate to methods and systems for depositing layer on substrates, and more specifically, to methods for forming boron...
US-9,966,437 Method for manufacturing silicon carbide semiconductor device
Included are the steps of: preparing a silicon carbide substrate having an epitaxial layer formed thereon; forming an upper-layer film on the epitaxial layer;...
US-9,966,436 Semiconductor device with non-linear surface
A semiconductor device includes a first channel having a first linear surface and a first non-linear surface. The semiconductor device includes a first...
US-9,966,435 Body tied intrinsic FET
A novel semiconductor transistor is presented. The semiconductor structure has a MOSFET like structure, with the difference that the device channel is formed in...
US-9,966,434 Manufacturing method of semiconductor device
A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the...
US-9,966,433 Multiple-step epitaxial growth S/D regions for NMOS FinFET
A method of forming NFET S/D structures with multiple layers, with consecutive epi-SiP layers being doped at increasing dosages of P and the resulting device...
US-9,966,432 Semiconductor devices including an etch stop pattern and a sacrificial pattern with coplanar upper surfaces and...
Semiconductor devices and methods of manufacturing semiconductor devices. A semiconductor device includes a metal gate electrode stacked on a semiconductor...
US-9,966,431 Nanowire-based vertical memory cell array having a back plate and nanowire seeds contacting a bit line
The present disclosure relates to semiconductor structures and, more particularly, to vertical memory cell structures and methods of manufacture. The vertical...
US-9,966,430 Stacked nanowire device width adjustment by gas cluster ion beam (GCIB)
A method of making a nanowire device includes disposing a first nanowire stack over a substrate, the first nanowire stack including alternating layers of a...
US-9,966,429 Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current
A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a...
US-9,966,428 Capacitor and fabrication method thereof
A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a first conductive layer, a first...
US-9,966,427 Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliability
A method for manufacturing a metal-insulator-metal (MIM) capacitor with a top electrode that is free of sidewall damage is provided. A bottom electrode layer is...
US-9,966,426 Augmented capacitor structure for high quality (Q)-factor radio frequency (RF) applications
An augmented capacitor structure includes a substrate and a first capacitor plate of a first conductive layer on the substrate. The augmented capacitor...
US-9,966,425 Method for fabricating a MIM capacitor
A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer;...
US-9,966,424 Organic light emitting diode display device
An organic light emitting diode display device includes a substrate, a pixel structure, and a wiring pattern. The substrate includes a plurality of pixel...
US-9,966,423 OLED substrate, manufacturing method thereof, OLED display panel and electronic equipment
The embodiments of the present invention provide an OLED substrate, a manufacturing method thereof, an OLED display panel and an electronic equipment. The OLED...
US-9,966,422 Organic electro-luminescent display device having pixel including fin structure
An organic EL display device includes a substrate, a fin structure on the substrate, the fin structure standing upright in a thickness direction of the...
US-9,966,421 Light-emitting element having picture elements
A display device includes a plurality of light-emitting elements aligned on a TFT substrate in a formation of a matrix. The plurality of light-emitting elements...
US-9,966,420 Display devices and methods of manufacturing display devices
A display device includes a substrate with a major surface and a cover opposing the substrate. An array of light emitting pixels is disposed over a generally...
US-9,966,419 Display device and manufacturing method of the same
A display device includes a first substrate including a first area and a second area, light emitting elements arranged in the first area, connecting pads...
US-9,966,418 Pixel structure, organic light emitting display panel and method for fabricating the same, and display device
The present invention discloses a pixel structure, an organic light emitting display panel and a method for fabricating the same, and a display device. The...
US-9,966,417 Color display device
The present invention provides a color display device, including a substrate, an anode formed on the substrate, a TFT array formed on the anode, a hole...
US-9,966,416 Three dimensional complementary metal oxide semiconductor carbon nanotube thin film transistor circuit
A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and a n-type carbon nanotube...
US-9,966,415 Complementary thin film transistor and manufacturing method thereof
A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type...
US-9,966,414 High efficiency LEDs and LED lamps
In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a...
US-9,966,413 Light-emitting diode module and lamp using the same
A light-emitting diode (LED) module and a lamp using the same are provided. The LED module includes a substrate and several light-emitting packages. Each...
US-9,966,412 Method for reducing optical cross-talk in image sensors
A device includes a semiconductor substrate, a plurality of micro-lenses disposed on the substrate, each micro-lens being configured to direct light radiation...
US-9,966,411 Method of manufacturing image capturing apparatus
A method of manufacturing an image capturing apparatus is provided. The method comprises forming a structure which includes an interlayer insulation film having...
US-9,966,410 Image sensor circuit and image sensing method
An image sensor circuit, comprises: a photo sensing circuit including a photo sensitive device for sensing a light signal to generate a photo sensing signal at...
US-9,966,409 Imaging device for electromagnetic radiation
An imaging device for electromagnetic radiation, especially for x-ray and/or gamma radiation, is disclosed. In an embodiment, the imaging device includes a...
US-9,966,408 Image sensor with inverted source follower
A method of image sensor fabrication includes forming a photodiode and a floating diffusion in a first semiconductor material, and removing part of an oxide...
US-9,966,407 Unit pixels, image sensors including the same, and image processing systems including the same
A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured...
US-9,966,406 Semiconductor devices including back-side integrated circuitry
Semiconductor devices may include a semiconductor substrate comprising at least one of transistors and capacitors may be located at an active surface of the...
US-9,966,405 Method and apparatus for image sensor packaging
A device having a sensor die with a sensor and a control circuit die with at least one control circuit disposed therein, the control circuit die on the sensor...
US-9,966,404 Edge reflection reduction
An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the...
US-9,966,403 Solid-state imaging apparatus to suppress flare and ghosts
A solid-state imaging apparatus includes: an imaging section having a light-receiving portion for receiving light from an object to image the object; and a...
US-9,966,402 Solid-state imaging device
The present invention intends to provide a solid-state imaging device having minimum production costs and high detection accuracy. A solid-state imaging device...
US-9,966,401 Package for image sensor with outer and inner frames
A semiconductor package according to the inventive concepts includes an image sensor chip mounted on a substrate, a first holder disposed on an edge area of the...
US-9,966,400 Photosensitive module and method for forming the same
A method for forming a photosensitive module is provided. The method includes providing a sensing device. The sensing device includes a substrate having a first...
US-9,966,399 Pixel having a plurality of pinned photodiodes
A pixel is formed by two or more photodiodes and at least one transfer gate. The transfer gate is configured to transfer charge from each of the photodiodes to...
US-9,966,398 Solid-state imaging device
A solid-state imaging device includes a plurality of pixels, a reference signal supply unit configured to output a reference signal, and a comparison unit...
US-9,966,397 Pixel, pixel array, image sensor including pixel array, and method of driving pixel array having a capacitor
Provided are a pixel, a pixel array, an image sensor including the pixel array, and a method of driving the pixel array. The pixel includes a photoelectric...
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