Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,997,639 Semiconductor device and method for manufacturing the same
In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a...
US-9,997,638 Semiconductor device and manufacturing method thereof
An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide semiconductor...
US-9,997,637 Semiconductor device
The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first...
US-9,997,636 Fabricating method of optical sensing device
An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The...
US-9,997,635 Thin film transistor, manufacturing method and testing method thereof, array substrate and display device
A thin film transistor and manufacturing and testing methods thereof, an array substrate and a display device, and the thin film transistor includes a...
US-9,997,634 TFT backplane and manufacturing method thereof
The invention provides a TFT backplane structure and manufacturing method thereof. The TFT backplane structure uses the three-layered structure, from bottom up,...
US-9,997,633 Semiconductor devices, FinFET devices and methods of forming the same
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate over the...
US-9,997,632 Fin-type field effect transistor device and manufacturing method thereof
A fin-type field effect transistor device including a substrate, at least one gate stack structure, spacers and source and drain regions is described. The gate...
US-9,997,631 Methods for reducing contact resistance in semiconductors manufacturing process
A method of forming a semiconductor device includes forming a fin on a substrate and forming a source/drain region on the fin. The method further includes...
US-9,997,630 Charge carrier transport facilitated by strain
A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second...
US-9,997,629 FinFET with high mobility and strain channel
An integrated circuit device includes a fin having a gate area beneath a gate electrode structure, a source/drain region disposed beyond ends of the fin, and a...
US-9,997,628 Semiconductor device and method of fabricating thereof
The present disclosure provides a semiconductor device and a method of fabricating the semiconductor device. In some embodiments, the semiconductor device...
US-9,997,627 Vertical channel oxide semiconductor field effect transistor and method for fabricating the same
A semiconductor device includes: a channel layer surrounded by a source layer; a first dielectric layer around the source layer; a gate layer around the channel...
US-9,997,626 NLDMOS device and method for manufacturing the same
An NLDMOS device that includes a drift region, a P well, and a first PTOP layer and a second PTOP layer formed on the drift region, wherein the first PTOP layer...
US-9,997,625 Semiconductor device and method for manufacturing the same
A semiconductor device includes: a body region of a second conductivity type formed in a semiconductor layer of a first conductivity type in a semiconductor...
US-9,997,624 Semiconductor device and method of manufacturing the same
A semiconductor device includes: an n- type layer disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench formed...
US-9,997,623 Bidirectional power switch
A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a...
US-9,997,622 IE type trench gate IGBT
In a method of further enhancing the performance of a narrow active cell IE type trench gate IGBT having the width of active cells narrower than that of...
US-9,997,621 Semiconductor device and manufacturing method of the same
Reduction of power consumption of a semiconductor device is aimed. The semiconductor device includes a cell region where a vertical power MOSFET is formed and...
US-9,997,620 Semiconductor device and an electronic device
A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a...
US-9,997,619 Bipolar junction transistors and methods forming same
A BJT includes a pillar formed on a buried oxide layer that is itself formed on a silicon substrate. The pillar has top and bottom surfaces and sidewalls, the...
US-9,997,618 Integrated strained stacked nanosheet FET
Transistors and methods of forming the same include forming a fin of alternating layers of a channel material and a sacrificial material. Stress liners are...
US-9,997,617 Metal oxide semiconductor (MOS) isolation schemes with continuous active areas separated by dummy gates and...
Embodiments disclosed in the detailed description include metal oxide semiconductor (MOS) isolation schemes with continuous active areas separated by dummy...
US-9,997,616 Semiconductor device having a strained region
The present disclosure provides devices and methods which provide for strained epitaxial regions. A method of semiconductor fabrication is provided that...
US-9,997,615 Method for forming semiconductor structure with epitaxial growth structure
Methods for forming semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a hard mask structure over a...
US-9,997,613 Integrated etch stop for capped gate and method for manufacturing the same
A semiconductor device includes a plurality of gate stacks spaced apart from each other on a substrate, an etch stop layer formed on an upper surface of each...
US-9,997,612 Compound semiconductor device and method of manufacturing the same
A compound semiconductor device includes: a semiconductor substrate; a channel layer over the semiconductor substrate; a carrier supply layer over the channel...
US-9,997,611 Graphene wiring structure and method for manufacturing graphene wiring structure
A graphene wiring structure of an embodiment has a multilayered graphene having a plurality of planar graphene sheets laminated, and a first interlayer...
US-9,997,610 Gate stack formed with interrupted deposition processes and laser annealing
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure...
US-9,997,609 Implantation formed metal-insulator-semiconductor (MIS) contacts
A method of forming a metal-insulator-semiconductor (MIS) contact, a transistor including the MIS contact, and the MIS contact are described. The method...
US-9,997,608 Transistor device with segmented contact layer
Disclosed is a transistor device. The transistor device includes a plurality of device cells each having an active device region integrated in a semiconductor...
US-9,997,607 Mirrored contact CMOS with self-aligned source, drain, and back-gate
A semiconductor device and method of forming a semiconductor device including an inverted field effect transistor having metal filled front-side source and...
US-9,997,606 Fully depleted SOI device for reducing parasitic back gate capacitance
A method is presented for forming a semiconductor structure. The method includes forming a bilayer buried insulator over a substrate, forming an extremely thin...
US-9,997,605 LDMOS device and its manufacturing method
The present invention discloses an LDMOS device, whose drift region is composed of a first drift region and a second drift region, the first drift region being...
US-9,997,604 Electrode connecting structure including adhesion layer and electronic device including the same
Provided are an electrode connecting structure that includes an adhesion layer formed between a graphene layer and a metal layer and an electronic device having...
US-9,997,603 Semiconductor device and method of manufacturing semiconductor device
In a semiconductor device, an interlayer insulating film electrically insulating a gate electrode and a source electrode has a structure in which a BPSG film...
US-9,997,602 Semiconductor device with transistor cells and enhancement cells with delayed control signals
A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift...
US-9,997,601 Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain in the substrate, a gate electrode disposed over the...
US-9,997,600 Semiconductor device including fin structures disposed over buffer structures
A semiconductor FET device includes a buffer structure and a fin structure. The buffer structure has a fin shape, is disposed over a substrate and extends along...
US-9,997,599 MOS-based power semiconductor device having increased current carrying area and method of fabricating same
A semiconductor device includes a substrate, a drift region, a source region, a gate region, a drain contact and a base region. The substrate is doped with a...
US-9,997,598 Three-dimensional semiconductor device and method of fabrication
A semiconductor device including a substrate and a gate region of a field effect transistor formed on the substrate. The gate region includes vertically stacked...
US-9,997,597 Vertical single electron transistor formed by condensation
A method for forming a vertical single electron transistor includes forming a heterostructured nanowire having a SiGe region centrally disposed between an upper...
US-9,997,596 Tunneling field-effect transistor with a plurality of nano-wires and fabrication method thereof
A tunneling field-effect transistor may be provided that includes: a substrate; a source which is formed on the substrate and into which p+ type impurity ion is...
US-9,997,595 Semiconductor device, a micro-electro-mechanical resonator and a method for manufacturing a semiconductor device
A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of...
US-9,997,594 Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and...
A compound semiconductor device includes: a GaN-based channel layer; a barrier layer of nitride semiconductor above the channel layer; and a cap layer of...
US-9,997,593 Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
A trench type power semiconductor device with improved breakdown voltage and UIS performance and a method for preparation the device are disclosed. The trench...
US-9,997,592 Capacitor, array of capacitors, and device comprising an electrode
A capacitor includes an elevationally inner capacitor electrode, an elevationally outer capacitor electrode, and capacitor insulator between the elevationally...
US-9,997,591 Capacitor and a semiconductor device including the same
A semiconductor device is disclosed. The semiconductor device includes a substrate and capacitor electrically connected to the substrate. The capacitor includes...
US-9,997,590 FinFET resistor and method to fabricate same
A method includes providing a semiconductor substrate having a plurality of linear semiconductor fin structures spaced apart from one another on a surface of...
US-9,997,589 Display device
A display device according to the invention includes: a first substrate that includes a flexible substrate, is segmented into a display area and a non-display...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.