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Patent # Description
US-9,997,385 Centering substrates on a chuck
An apparatus and an associated method. The apparatus includes a chuck in a process chamber, an array of three or more ultrasonic sensors in the process chamber,...
US-9,997,384 Methods for transporting wafers between wafer holders and chambers
An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein....
US-9,997,383 Bond head assemblies, thermocompression bonding systems and methods of assembling and operating the same
A bond head assembly for bonding a semiconductor element to a substrate is provided. The bond head assembly includes a base structure, a heater, and a clamping...
US-9,997,382 Substrate processing apparatus and substrate processing method
In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part,...
US-9,997,381 Hybrid edge ring for plasma wafer processing
An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate...
US-9,997,380 Substrate processing apparatus
In a substrate processing apparatus, a chamber bottom has a plurality of large chamber exhaust ports arranged in a circumferential direction. A cup rotation...
US-9,997,379 Method and apparatus for wafer wet processing
A gas dispenser in a process module for wet processing of wafer-shaped articles is substantially smaller than the article to be processed and is movable...
US-9,997,378 Substrate processing apparatus and substrate processing method
In a substrate processing apparatus, with an internal space of a chamber brought into a pressurized atmosphere, an etching process is performed by continuously...
US-9,997,377 Methods of forming configurable microchannels in package structures
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include...
US-9,997,376 Encapsulated dies with enhanced thermal performance
The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip...
US-9,997,375 LED unit and manufacturing method thereof
An LED unit according to the invention has a resin housing which is detachably assembled to a vehicle lamp, a lead frame which has a terminal portion which is...
US-9,997,374 Etching method
An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency...
US-9,997,373 Technique to deposit sidewall passivation for high aspect ratio cylinder etch
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate...
US-9,997,372 Technique to deposit sidewall passivation for high aspect ratio cylinder etch
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate...
US-9,997,371 Atomic layer etch methods and hardware for patterning applications
Methods and apparatuses for patterning carbon-containing material over a layer to be etched are provided herein. Methods involve trimming carbon-containing...
US-9,997,370 Electronic apparatus, manufacturing method thereof, oscillator, electronic appliance, and mobile unit
An electronic apparatus according to the invention includes a substrate, a side wall that is disposed directly on the substrate or via an insulation film and...
US-9,997,367 Non-lithographic line pattern formation
A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric ...
US-9,997,366 Silicon oxide silicon nitride stack ion-assisted etch
A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a...
US-9,997,365 Method of manufacturing semiconductor device, heat treatment apparatus, and storage medium
A method of manufacturing a semiconductor device includes: loading a substrate into a process container after dry-etching a portion of a silicon film formed in...
US-9,997,364 High aspect ratio etch
A method for etching a layer in a processing chamber is provided. A plurality of cycles is provided, where each cycle comprises a deposition phase, a clearing...
US-9,997,363 Method for producing semiconductor piece, circuit board and electronic device including semiconductor piece,...
A method for producing a semiconductor piece includes forming a first groove portion of a front-surface-side groove by anisotropic dry etching from a front...
US-9,997,362 Cobalt CVD
A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and...
US-9,997,361 Gate stack formed with interrupted deposition processes and laser annealing
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure...
US-9,997,360 Method for mitigating layout effect in FINFET
Multigate devices and fabrication methods that mitigate the layout effects are described. In conventional processes to fabricate multigate semiconductor devices...
US-9,997,359 Semiconductor device with rear-side insert structure
A semiconductor device includes a semiconductor body and a rear side insertion structure. The semiconductor body has a first surface at a front side and a...
US-9,997,358 Silicon carbide semiconductor device having stacked epitaxial layers
In a vertical MOSFET of a trench gate structure, a high-concentration implantation region is provided in a p-type base region formed from a p-type silicon...
US-9,997,357 Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may...
US-9,997,355 Method for preparing a quantum dot mixture with a bimodal size distribution
A method for preparing a quantum dot mixture with a bimodal size distribution includes steps of: a) preparing a mixed cationic precursor solution, b) preparing...
US-9,997,354 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number...
US-9,997,353 Silicon composite substrates
A composite substrate includes a single crystal silicon layer on a glass or glass ceramic layer on a support layer can be used to form GaN layer without cracks....
US-9,997,352 Polysilicon residue removal in nanosheet MOSFETs
A method is presented for forming a semiconductor device. The method includes depositing a sacrificial layer on a fin structure formed on a substrate and then...
US-9,997,351 Apparatus and techniques for filling a cavity using angled ion beam
A method may include generating a plasma in a plasma chamber and directing the ions comprising at least one of a condensing species and inert gas species from...
US-9,997,350 Methods for depositing films with organoaminodisilane precursors
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001## ...
US-9,997,348 Wafer stress control and topography compensation
A method of forming a semiconductor wafer includes generating a stress topography model of a semiconductor wafer with a plurality of desired structures in a...
US-9,997,346 Electron spectrometer
A charged particle spectrometer of hemispherical analyzer type for analyzing a particle emitting sample, the spectrometer comprising at least a first mechanism...
US-9,997,345 Orthogonal acceleration coaxial cylinder mass analyser
A mass analyzer is disclosed comprising an annular ion guide comprising a first annular ion guide section and a second annular ion guide section, wherein the...
US-9,997,344 Methods and devices for generating double emulsions
The present disclosure describes devices and methods capable of generating multi-phase emulsions, including double emulsion droplets in a gas phase. The present...
US-9,997,343 Mass analyser and method of mass analysis
An electrostatic ion trap for mass analysis includes a first array of electrodes and a second array of electrodes, spaced from the first array of electrode. The...
US-9,997,342 Method and device for mass spectrometric analysis of biomolecules using charge transfer dissociation (CTD)
Provided herein are devices, systems, and methods of CTD mass spectrometry analysis of biomolecules.
US-9,997,341 Unknown identification using collision cross section
A method of mass spectrometry is disclosed comprising experimentally determining or measuring one or more first ion mobility values, collision cross sections or...
US-9,997,340 RF-only detection scheme and simultaneous detection of multiple ions
A mass spectrometer apparatus and method for conducting simultaneous MS/MS analysis including: a device to select a precursor ion having a specified m/z; a...
US-9,997,339 Sputtering apparatus and substrate processing apparatus
A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface...
US-9,997,338 Method for operating a pulsed arc source
This invention relates to an arc-based method for the deposition of insulating layers and to an arc-based method for low-temperature coating processes, in which...
US-9,997,337 Plasma processing method and plasma processing apparatus
The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The...
US-9,997,336 Multi-zone gas distribution plate (GDP) and a method for designing the multi-zone GDP
A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet...
US-9,997,335 Plasma source enhanced with booster chamber and low cost plasma strength sensor
A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber...
US-9,997,334 Seedless particles with carbon allotropes
Carbon materials having carbon aggregates, where the aggregates include carbon nanoparticles and no seed particles, are disclosed. In various embodiments, the...
US-9,997,333 Sub-pulsing during a state
A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two...
US-9,997,332 Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing...
US-9,997,331 Charged-particle beam microscopy
A charged-particle beam microscope includes a charged-particle beam source to generate a charged-particle beam. A stage is provided to hold a sample in the path...
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