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Patent # Description
US-1,000,8589 Oxide thin film transistor and method of fabricating the same
Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present...
US-1,000,8588 Method for manufacturing oxide semiconductor device
The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide...
US-1,000,8587 Semiconductor device and manufacturing method thereof
A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide...
US-1,000,8586 Dual fill silicon-on-nothing field effect transistor
A patterned stack of a first silicon-germanium alloy nanowire, a second silicon-germanium alloy nanowire, and a silicon-containing nanowire is formed on a...
US-1,000,8585 Semiconductor structure with an L-shaped bottom plate
A semiconductor structure that has adjacent transistors that share a common source/drain semiconductor structure. At least one of the adjacent transistors...
US-1,000,8584 Semiconductor device, method of manufacturing the semiconductor device, and electronic device
The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the...
US-1,000,8583 Gate-all-around nanosheet field-effect transistors and methods of manufacturing the same
A method of manufacturing a gate-all-around (GAA) nanosheet (NS) field effect transistor (FET) includes forming a stack on a substrate. The stack includes an...
US-1,000,8582 Spacers for tight gate pitches in field effect transistors
Structures for spacers of a field-effect transistor and methods for forming such spacers. A mask layer has a feature separated from a vertical sidewall of a...
US-1,000,8581 Semiconductor device having metal gate with nitrogen rich portion and titanium rich portion
A semiconductor device is disclosed. The semiconductor device includes a substrate and a gate structure on the substrate. The gate structure includes a high-k...
US-1,000,8580 FET including an InGaAs channel and method of enhancing performance of the FET
According to an embodiment of the present invention, a method of manufacturing a FET device having a set BTBT leakage and a maximum V.sub.DD includes:...
US-1,000,8579 MOSFET with integrated schottky diode
Schottky structure fabrication includes forming two trenches in a semiconductor material. The trenches are separated from each other by a mesa. Sidewalls and a...
US-1,000,8578 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device includes the steps of first forming a metal gate on a substrate and a spacer around the metal gate, in which the...
US-1,000,8577 Methods of forming an air-gap spacer on a semiconductor device and the resulting device
One illustrative method disclosed herein includes, among other things, forming a gate structure above an active region and an isolation region, wherein the gate...
US-1,000,8576 Epi facet height uniformity improvement for FDSOI technologies
A method of controlling the facet height of raised source/drain epi structures using multiple spacers, and the resulting device are provided. Embodiments...
US-1,000,8575 Semiconductor device and method of fabricating the same
A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The first...
US-1,000,8574 Gate structure and method of fabricating the same
A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over...
US-1,000,8573 High-voltage metal-oxide-semiconductor transistor device
A high-voltage metal-oxide-semiconductor transistor device includes a semiconductor substrate, a gate structure, a first drift region, a first isolation...
US-1,000,8572 Compound semiconductor device, power supply unit, and amplifier
A compound semiconductor device disclosed herein includes: a substrate; an electron transit layer formed on the substrate and made of nitride semiconductor...
US-1,000,8571 Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
According to one embodiment, a semiconductor wafer includes a substrate, an AlN buffer layer, a foundation layer, a first high Ga composition layer, a high Al...
US-1,000,8570 Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device
The contact area between a source strap structure of a buried source layer and semiconductor channels within memory structures can be increased by laterally...
US-1,000,8569 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a gate structure is formed on the substrate, a recess is formed...
US-1,000,8568 Structure and formation method of semiconductor device structure
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor...
US-1,000,8567 Nanowire FinFet transistor
Semiconductor devices and methods of forming the same are provided. A semiconductor device includes a substrate having a fin. A first nanowire is disposed on...
US-1,000,8566 Semiconductor device with reduced electrical resistance and capacitance
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a...
US-1,000,8565 Semiconductor devices with germanium-rich active layers and doped transition layers
Semiconductor device stacks and devices made there from having Ge-rich device layers. A Ge-rich device layer is disposed above a substrate, with a p-type doped...
US-1,000,8564 Method of corner rounding and trimming of nanowires by microwave plasma
Embodiments of the invention describe a method of corner rounding and trimming of nanowires used in semiconductor devices. According to one embodiment, the...
US-1,000,8563 Dielectric with air gaps for use in semiconductor devices
Aspects of the invention are directed to a method for forming a semiconductor device. A dielectric layer is formed on a semiconductor substrate. Subsequently, a...
US-1,000,8562 Semiconductor device manufacturing method
A first parallel pn layer in which first n-type regions and first p-type regions are disposed in a plan view layout of stripes in an element active portion. A...
US-1,000,8560 Capacitors in integrated circuits and methods of fabrication thereof
A capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first...
US-1,000,8559 Etching process control in forming MIM capacitor
A method includes forming a capacitor, which includes depositing a bottom electrode layer, depositing a capacitor insulator layer over the bottom electrode...
US-1,000,8558 Advanced metal insulator metal capacitor
A method for fabricating an advanced metal insulator metal capacitor structure includes providing a pattern in a dielectric layer. The pattern includes a set of...
US-1,000,8557 Vertical meander inductor for small core voltage regulators
Vertical meander inductors for small core voltage regulators and approaches to fabricating vertical meander inductors for small core voltage regulators are...
US-1,000,8556 Organic light-emitting display device
An organic light-emitting display device includes a substrate including a display area and a peripheral area surrounding the display area. The display area...
US-1,000,8555 Display device and method of manufacturing the same
Disclosed are an organic light emitting display device and a method of manufacturing the same, which reduce a loss of light emitted from an organic light...
US-1,000,8554 Display apparatus
A display apparatus includes a display apparatus includes a display panel including a curved display area, and an optical unit including a liquid crystal layer...
US-1,000,8553 Display device
A display device includes a flexible substrate having a display region including a plurality of pixels, each of the plurality of pixels having a pair of...
US-1,000,8552 Organic light-emitting display panel and electronic device
Disclosed are an organic light-emitting display panel and an electronic device. The organic light-emitting display panel comprises: an array substrate, wherein...
US-1,000,8551 Organic light emitting display
An organic light emitting display includes a first substrate including a display area and a non-display area, a plurality of dummy pixels positioned on at least...
US-1,000,8550 Display
A display according to an embodiment of the present invention includes an element substrate, a display section including a plurality of pixels each including a...
US-1,000,8549 Organic light emitting device
There is provided an organic light emitting device having a lower substrate, a first electrode formed on lower substrate, an organic emission layer for emitting...
US-1,000,8547 Semiconductor device, display device, and electronic device
A display device which can perform external correction in parallel with display operation is provided. The display device includes pixels arranged in a matrix...
US-1,000,8546 Image sensors with organic photodiodes and methods for forming the same
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction...
US-1,000,8545 Organic photoelectronic device and image sensor
An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode...
US-1,000,8544 Image sensor and electronic device including the same
An image sensor includes at least one first pixel configured to sense light in a visible light wavelength spectrum and a second pixel configured to sense light...
US-1,000,8543 Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit...
US-1,000,8542 Solid state devices having fine pitch structures
In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or...
US-1,000,8541 Memory arrays and methods of forming an array of memory cell
A method of forming an array of memory cells includes forming lines of covering material that are elevationally over and along lines of spaced sense line...
US-1,000,8540 Spin-orbitronics device and applications thereof
The present invention is directed to a spin-orbitronics device including an array of MTJs with each of the MTJs coupled to a respective one of a plurality of...
US-1,000,8539 Magnetoresistive random access memory device and method of manufacturing the same
A magnetoresistive random access memory (MRAM) device including a substrate including a plurality of active patterns arranged along a first direction, each of...
US-1,000,8538 Semiconductor structure and method of forming the same
The present disclosure provides a semiconductor structure, including a logic region and a memory region adjacent to the logic region. The memory region includes...
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