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Patent # Description
US-1,001,4446 Chip substrate
A chip substrate includes conductive layers, an insulation layer configured to electrically isolate the conductive layers, and a cavity composed of a groove...
US-1,001,4445 Light-emitting device and manufacturing method thereof
A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first...
US-1,001,4444 Optoelectronic semiconductor chip
An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side...
US-1,001,4442 Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for...
A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type...
US-1,001,4441 Light-emitting device
Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer...
US-1,001,4440 Graphene display devices and the display driving methods thereof
A graphene display device includes a graphene display unit and a display control unit electrically connected with the graphene display unit. The graphene...
US-1,001,4439 System and method for providing an electron blocking layer with doping control
Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included...
US-1,001,4438 Light emitting device including semiconductor nanocrystals
A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer...
US-1,001,4437 Optical semiconductor device and method for making the device
An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that...
US-1,001,4436 Method for manufacturing a light emitting element
A method for manufacturing a light emitting element includes: a GaN layer is formed on an AlN-deposited plain or patterned substrate, and the stress between...
US-1,001,4435 Method for manufacturing metallic reflector for LED package
A metallic reflector manufacturing method for an LED package. The method includes preparing a metal plate, and processing a stamping reflector that includes a...
US-1,001,4434 Top to bottom solution deposition of inorganic solar modules
A technique is described depositing a new formula of indium and tin salt solutions as a precursor to form a solid transparent indium tin oxide (ITO) film on...
US-1,001,4433 Device for heating a substrate
A device for heating a substrate according to a predetermined temperature profile for crystallizing a material on the substrate includes: a housing, at least a...
US-1,001,4432 Manufacturing method for solar cell
Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed...
US-1,001,4431 Thin film solar cell and method of fabricating the same
Disclosed is a thin film solar cell including a substrate, a first electrode, a light absorbing layer, a buffer layer, a window layer, and a second electrode,...
US-1,001,4430 X-ray direct conversion detector with additional radiation illumination
A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for...
US-1,001,4429 Semiconductor structures including bonding layers, multi-junction photovoltaic cells and related methods
A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on...
US-1,001,4428 Solar cell module and solar cell module manufacturing method
A solar cell module is provided with: a plurality of solar cell elements each having a surface; a light diffusion portion provided in an outer peripheral area...
US-1,001,4427 Solar cell module
A solar cell module includes: a first optical system which concentrates sunlight; a power generation element which performs photoelectric conversion; a glass...
US-1,001,4426 Solar cell and solar cell module
To provide a solar cell having improved photoelectric conversion efficiency and a solar cell module. A solar cell (10) is provided with a photoelectric...
US-1,001,4425 Spacer formation in a solar cell using oxygen ion implantation
A solar cell is disclosed. The solar cell has a front side facing the sun during normal operation, and a back side facing away from the sun. The solar cell...
US-1,001,4424 Reduced junction area barrier-based photodetector
A photodetector structure having a barrier layer disposed between a pair of like-conductively doped semiconductor layers, the barriers layer having a surface...
US-1,001,4423 Chalcogen back surface field layer
Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a...
US-1,001,4422 Semiconductor nanoparticle dispersion for a photoelectric conersion layer
A semiconductor nanoparticle dispersion is provided. The semiconductor nanoparticle including a plurality of semiconductor nanoparticles having a radius equal...
US-1,001,4421 High efficiency photovoltaic cells with self concentrating effect
Novel structures of photonics devices (e.g. photovoltaic cells also called as solar cells) are provided. The Cells are based on the micro (or nano) structures...
US-1,001,4420 Solar cell
A solar cell includes: a semiconductor substrate having a light-receiving surface and a back surface; a first-conductivity-type first semiconductor layer on the...
US-1,001,4419 Solar cell and method for manufacturing the same
A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a...
US-1,001,4418 Conductive thick film paste for solar cell contacts
The present invention relates to an inorganic reaction system used in the manufacture of electroconductive pastes. The inorganic reaction system comprises a...
US-1,001,4417 Solid state imaging apparatus, production method thereof and electronic device
A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light...
US-1,001,4415 Semiconductor device has an oxide semiconductor layer containing a C-axis aligned crystal
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain...
US-1,001,4413 Semiconductor device
To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor...
US-1,001,4412 Pre-sculpting of Si fin elements prior to cladding for transistor channel applications
Transistor fin elements (e.g., fin or tri gate) may be modified by radio frequency (RF) plasma and/or thermal processing for purpose of dimensional sculpting....
US-1,001,4411 Modulating germanium percentage in MOS devices
An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the...
US-1,001,4410 Method for producing semiconductor device and semiconductor device
A silicide layer on a gate electrode of a MONOS memory is prevented from being disconnected, and a property of a MISFET is improved. As means for that, when a...
US-1,001,4409 Method and structure to provide integrated long channel vertical FinFET device
A vertical fin field effect transistor includes a semiconductor fin disposed over a well region and a gate conductor layer disposed over a sidewall of the fin,...
US-1,001,4408 Semiconductor devices and methods for forming the same
A semiconductor device includes a semiconductor substrate having a first conductivity type, and a first well region disposed in the semiconductor substrate,...
US-1,001,4407 Semiconductor device having asymmetric active region and method of forming the same
Provided are a semiconductor device and a method of forming the same. The semiconductor device includes an active region defined by an isolation layer. A source...
US-1,001,4406 Semiconductor device and method of forming the same
A semiconductor device and a forming method thereof, the semiconductor device includes a first and a second wells, a source region, a drain region, two gate...
US-1,001,4405 Semiconductor device with extended electrically-safe operating area
In at least some embodiments, a semiconductor device comprises a source region is formed within a well. The source region comprises a first dopant type, and the...
US-1,001,4404 MOS-gated power devices, methods, and integrated circuits
MOS-gated devices, related methods, and systems for vertical power and RF devices including an insulated trench and a gate electrode. A body region is...
US-1,001,4403 Semiconductor device
A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride...
US-1,001,4402 High electron mobility transistor (HEMT) device structure
A high electron mobility transistor (HEMT) device structure is provided. The HEMT device structure includes a channel layer formed over a substrate and an...
US-1,001,4401 Semiconductor device with passivation layer for control of leakage current
A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer...
US-1,001,4400 Semiconductor device having a defined oxygen concentration
A semiconductor device includes: a semiconductor substrate having a first side, a second side opposite the first side, and a thickness; at least one...
US-1,001,4399 Hetero-junction bipolar transistor and electric device
This hetero-junction bipolar transistor includes a first n-type GaN layer, an Al.sub.xGa.sub.1-xN layer (0.1.ltoreq.x.ltoreq.0.5), an undoped GaN layer having a...
US-1,001,4398 Bipolar transistor device and method of fabrication
The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent...
US-1,001,4397 Bipolar junction transistors with a combined vertical-lateral architecture
Device structures and fabrication methods for a bipolar junction transistor. The device structure includes an intrinsic base, an emitter having a vertical...
US-1,001,4396 Spin control electronic device operable at room temperature
A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a...
US-1,001,4395 Fin tunnel field effect transistor (FET)
A fin tunnel field effect transistor includes a seed region and a first type region disposed above the seed region. The first type region includes a first...
US-1,001,4394 Structure and formation method of semiconductor device with metal gate
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a...
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