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Patent # Description
US-1,002,0343 Wafer-level back-end fabrication systems and methods
Systems and methods may be provided for fabricating infrared focal plane arrays. The methods include providing a device wafer, applying a coating to the device...
US-1,002,0342 Image pickup module manufacturing method, and image pickup module manufacturing device
A manufacturing device holds a lens unit on a Z axis that is orthogonal to a chart surface of a measurement chart, holds an image pickup element unit on the Z...
US-1,002,0341 Image sensor and electronic device including the same
An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region...
US-1,002,0340 Solid-state image sensing element and imaging system
Each of a plurality of pixels arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer...
US-1,002,0339 Solid-state imaging device, manufacturing method of solid-state imaging device and electronic apparatus
A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer...
US-1,002,0338 Backside illuminated image sensor
A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer...
US-1,002,0337 Photoelectric conversion device, manufacturing method of photoelectric conversion device, and imaging system
Provided is a photoelectric conversion device including: a semiconductor substrate having a photoelectric conversion unit; a first conductive layer formed over...
US-1,002,0336 Imaging device and electronic device using three dimentional (3D) integration
An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or...
US-1,002,0335 Short-resistant chip-scale package
A short-resistant CSP includes an isolation layer, an electrically conductive RDL, and an insulating layer. The electrically conductive RDL is on the isolation...
US-1,002,0334 Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically...
US-1,002,0333 Solid-state imaging device
In this solid-state imaging device, the sameness of the potential distributions in pixels, in a region from a photodiode of a transfer transistor to a floating...
US-1,002,0332 Pixel circuit and imaging apparatus
Dark current of FD is eliminated in an image sensor, and conversion efficiency of converting electric charge to voltage is improved. A pixel circuit includes a...
US-1,002,0331 Dual-band lateral-effect position sensor
Systems and methods for a multi-band position sensor and a multi-band optical detector are disclosed. This system comprises a dual-axis, lateral-effect position...
US-1,002,0330 Solid-state image sensing device and semiconductor display device
To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact....
US-1,002,0329 Image sensor with solar cell function
A unit pixel element that acts as an image sensor or a solar cell according to the present invention comprises a photo detector that drives a photocurrent flow,...
US-1,002,0328 Test element unit, array substrate, display panel, display apparatus, and method of manufacturing array substrate
The present disclosure provides a test element unit, an array substrate, a display panel, a display apparatus and a corresponding manufacturing method. The test...
US-1,002,0327 Method for selective thin film deposition
A method device is prepared with a patterned thin film that can include one or more metal oxides on a suitable substrate. Initially, a pattern of a deposition...
US-1,002,0326 Circuit protection structure and display device having the same
A circuit protection structure applied to a gate driver that is in a display panel (GIP) is provided. The gate driver has a first metal layer, a first isolation...
US-1,002,0325 Method for producing TFT array substrate, TFT array substrate, and display apparatus
The present disclosure provides a method for producing a TFT array substrate, a TFT array substrate, and a display apparatus, and relates to a technical field...
US-1,002,0324 Display device
A disclosed display device includes a first oxide semiconductor layer and an oxide semiconductor connection wire both formed from an oxide semiconductor...
US-1,002,0323 Thin-film transistor device and display device using same
A display device including: a lead wiring layer pattern 207, made from metal, that extends outside a region 10A on a substrate in which a light-emitter is...
US-1,002,0322 Transistor and semiconductor device
A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which...
US-1,002,0321 Cross-coupled transistor circuit defined on two gate electrode tracks
A first PMOS transistor is defined by a gate electrode extending along a first gate electrode track. A first NMOS transistor is defined by a gate electrode...
US-1,002,0320 Semiconductor device and method for manufacturing same
According to the embodiment, a semiconductor device includes: a stacked body; a columnar portion, an insulating portion; and wall portion. The stacked body...
US-1,002,0319 Semiconductor memory device having pillars on a peripheral region and method of manufacturing the same
A semiconductor memory device includes a plurality of wiring layers formed on a substrate, one or more first pillars penetrating through the wiring layers on a...
US-1,002,0318 Semiconductor device
A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend...
US-1,002,0317 Memory device with multi-layer channel and charge trapping layer
A 3-D/vertical non-volatile (NV) memory device such as 3-D NAND flash memory and fabrication method thereof, the NV memory device includes vertical openings...
US-1,002,0316 Split-gate semiconductor device with L-shaped gate
A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate...
US-1,002,0315 Semiconductor memory device
A semiconductor memory device includes a first electrode film and a second electrode film spreading along a first direction and a second direction, first...
US-1,002,0314 Forming memory cell film in stack opening
Disclosed herein are methods of forming non-volatile storage. An opening may be etched through a stack of two alternating materials to a semiconductor...
US-1,002,0313 Antifuse with backfilled terminals
An antifuse may include a non-planar conductive terminal having a high-z portion extending to a greater z-height than a low-z portion. A second conductive...
US-1,002,0312 Static random access memory
A Static Random Access Memory (SRAM) Cell includes a first gate electrode layer covering a channel region of a read pull-down transistor, a second gate...
US-1,002,0311 Semiconductor memory device provided with DRAM cell including two transistors and common capacitor
A semiconductor memory device is provided such as a random-access memory (DRAM) including a plurality of DRAM memory cells. Each of the DRAM cells includes an...
US-1,002,0310 Memory device and fabricating method thereof
A memory device and a method for fabricating the same are provided. The memory device includes a substrate, a first active region, a second active region, a...
US-1,002,0309 Semiconductor device
At least one of a plurality of transistors which are highly integrated in an element is provided with a back gate without increasing the number of manufacturing...
US-1,002,0308 Thyristor memory cell with assist device
A vertical thyristor memory array including: a vertical thyristor memory cell, the vertical thyristor memory cell including: a p+ anode; an n-base located below...
US-1,002,0307 Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same
The disclosure is directed to an integrated circuit structure and a method of forming the same. The integrated circuit structure may include: a first device...
US-1,002,0306 Spacer for trench epitaxial structures
The disclosure relates to a structure and methods of forming spacers for trench epitaxial structures. The method includes: forming a spacer material between...
US-1,002,0305 Semiconductor device and method for manufacturing the same
There is formed a first concave portion that extends inside a semiconductor substrate from a main surface thereof. An insulating film is formed over the main...
US-1,002,0304 Fin field effect transistor, semiconductor device and fabricating method thereof
A substrate is patterned to form trenches and a semiconductor fin between the trenches. Insulators are formed in the trenches and a first dielectric layer is...
US-1,002,0303 Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layer
Methods for forming semiconductor devices having non-merged fin extensions. Methods for forming semiconductor devices include forming trenches in an insulator...
US-1,002,0302 Half-bridge circuit, H-bridge circuit and electronic system
A half-bridge circuit comprises a high supply contact and a low supply contact. A half-bridge output contact is connectable to drive a load and has a high-side...
US-1,002,0301 Array substrate and manufacturing method for the same
A manufacturing method for an array substrate is disclosed. The method includes: forming a gate electrode on a substrate; depositing a gate insulation layer, a...
US-1,002,0300 Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
Provided herein are integrated circuits for use in performing analyte measurements and methods of fabricating the same. Such arrays may be employed to detect a...
US-1,002,0299 Electrostatic discharge protection using a guard region
A silicon controlled rectifier (SCR) circuit is configured to shunt electrostatic discharge (ESD) current from a node to a reference voltage. The SCR circuit...
US-1,002,0298 ESD protection device
The present invention is provided with a Si substrate, an ESD protection circuit formed in the Si substrate, pads formed on the surface of the Si substrate and...
US-1,002,0297 Semiconductor module
Control ICs for controlling IGBTs include overheat detection comparators that determine an overheated state of the case, in addition to overheat detection...
US-1,002,0296 Semiconductor device
To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator...
US-1,002,0295 Semiconductor device comprising a plurality of drivers formed in different active regions having all source...
A semiconductor device including drivers is disclosed, which can maximize driving ability of a plurality of drivers installed in a given region when the...
US-1,002,0294 Device with light emitting diodes
A multi-LED device comprises a transparent substrate, a plurality of light emitting diodes, LEDs, arranged for emitting light of a plurality of colors and...
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