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Patent # Description
US-1,005,6484 VTFET devices utilizing low temperature selective epitaxy
Low temperature epitaxial silicon deposition for forming the top source or drain regions of VTFET structures. The methods generally include epitaxially growing...
US-1,005,6483 Method for producing a semiconductor device including semiconductor pillar and fin
A method for producing a semiconductor device includes forming a fin-shaped semiconductor layer on a substrate, forming a first insulating film around the...
US-1,005,6482 Implementation of long-channel thick-oxide devices in vertical transistor flow
A method for fabricating a semiconductor structure is provided that includes the steps of: forming a structure including a substrate, a counter-doped layer on...
US-1,005,6481 Semiconductor device structure
The present disclosure provides a semiconductor device structure including an active region having a semiconductor-on-insulator (SOI) configuration, a...
US-1,005,6480 High-side power device and manufacturing method thereof
A high-side device includes: a substrate, an epitaxial layer, a high voltage well, a body region, a gate, a source, a drain, and a buried region. A channel...
US-1,005,6479 Semiconductor device
A semiconductor device has reduced ON resistance (Ron) as well as a reduced electric field emanating from a current path. The semiconductor device includes a...
US-1,005,6478 High-electron-mobility transistor and manufacturing method thereof
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is...
US-1,005,6477 Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice...
A nitride heterojunction bipolar transistor with one or more polarization-assisted alloy hole-doped short-period superlattice layers are described herein. The...
US-1,005,6476 Heterojunction bipolar transistor
A collector layer of an HBT includes a high-concentration collector layer and a low-concentration collector layer thereon. The low-concentration collector layer...
US-1,005,6475 Semiconductor device and method for manufacturing the same
A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second...
US-1,005,6474 Semiconductor structures having increased channel strain using fin release in gate regions
A method of introducing strain in a channel region of a FinFET device includes forming a fin structure on a substrate, the fin structure having a lower portion...
US-1,005,6473 Semiconductor device and manufacturing method thereof
A method for manufacturing a semiconductor device, including forming a dummy gate structure on a substrate, in which the substrate has a source/drain portion...
US-1,005,6472 Method for forming semiconductor structure with contact over source/drain structure
A semiconductor structure and a method for forming the same are provided. The method includes forming a source/drain structure in a substrate and forming a...
US-1,005,6471 Semiconductor device
A semiconductor device includes a fin-shaped semiconductor layer and a pillar-shaped semiconductor layer on the fin-shaped semiconductor layer. A metal gate...
US-1,005,6470 Consumption of the channel of a transistor by sacrificial oxidation
A method for manufacturing a transistor is provided, the transistor including a gate disposed above an underlying layer of a semiconductor material, the gate...
US-1,005,6469 Gate cut integration and related device
A method for forming gate cuts during RMG processing and the resulting device are provided. Embodiments include forming Si fins over a substrate; forming a STI...
US-1,005,6468 Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins
A method of reducing parasitic capacitance includes providing a starting semiconductor structure, the starting semiconductor structure including a semiconductor...
US-1,005,6467 Semiconductor fin structure and method of forming the same
A method of forming a semiconductor fin structure is provided. A substrate is provided, which has at least two sub regions and a dummy region disposed...
US-1,005,6466 Methods for fabricating semiconductor device
A method for fabricating a semiconductor device may comprise forming a first transistor having a first threshold voltage in a first region of a substrate,...
US-1,005,6465 Transistor device and fabrication method
Transistor devices and fabrication methods are provided. A transistor is formed by forming a dummy gate film on a substrate and doping an upper portion of the...
US-1,005,6464 III-V gate-all-around field effect transistor using aspect ratio trapping
Embodiments of the invention provide methods for forming III-V gate-all-around field effect transistors on silicon substrates that utilize Aspect-Ratio Trapping...
US-1,005,6463 Transistor and manufacturing method thereof
A transistor includes a semiconductor channel layer, a gate structure, a gate insulation layer, an internal electrode, and a ferroelectric material layer. The...
US-1,005,6462 Metal gate structure and manufacturing method thereof
The present disclosure provides a semiconductor structure includes a semiconductor layer having a surface, and an interlayer dielectric (ILD) defining a metal...
US-1,005,6461 Composite masking self-aligned trench MOSFET
Aspects of the present disclosure discloses a method for fabricating a trench MOSFET device comprising simultaneously forming a narrow trench and a wide trench...
US-1,005,6460 Semiconductor device and manufacturing method thereof
A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which...
US-1,005,6459 Semiconductor arrangement
A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat...
US-1,005,6458 Siloxane and organic-based MOL contact patterning
Methods of MOL S/D contact patterning of RMG devices without gouging of the Rx area or replacement of the dielectric are provided. Embodiments include forming a...
US-1,005,6457 Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region...
The subject matter disclosed herein relates to semiconductor power devices, such as silicon carbide (SiC) power devices. In particular, the subject matter...
US-1,005,6456 N-channel gallium nitride transistors
The present description relates to n-channel gallium nitride transistors which include a recessed gate electrode, wherein the polarization layer between the...
US-1,005,6455 Semiconductor device and method of fabricating the same
A semiconductor device including a substrate, a gate stack, a pair of insulator structures, and source/drain materials is provided. The substrate has a...
US-1,005,6454 Semiconductor device and method of manufacturing the same
A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first...
US-1,005,6453 Semiconductor wafers with reduced bow and warpage
The present disclosure relates to semiconductor structures and, more particularly, to semiconductor wafers with reduced bowing and warping and methods of...
US-1,005,6452 Method for manufacturing vertical super junction drift layer of power semiconductor devices
A method for manufacturing a vertical super junction drift layer of a power semiconductor device. The method includes: a): adopting a P+ single crystal silicon...
US-1,005,6451 Semiconductor device and method for producing semiconductor device
Hydrogen atoms and crystal defects are introduced into an n- semiconductor substrate by proton implantation. The crystal defects are generated in the n-...
US-1,005,6450 Semiconductor device
A semiconductor device includes a semiconductor substrate with: a drift layer; a base layer; and a collector layer and a cathode layer. In the semiconductor...
US-1,005,6449 Semiconductor device and method for producing semiconductor device
Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n.sup.- drift layer, forming an n-type...
US-1,005,6448 Coplanar metal-insulator-metal capacitive structure
A method of fabricating a metal-insulator-metal (MIM) capacitor structure on a substrate includes forming a patterned metal layer over the substrate; forming an...
US-1,005,6447 Organic light emitting display device
Embodiments relate to an organic light emitting display device according to the present disclosure including: a plurality of pixels which includes red, white,...
US-1,005,6446 Display apparatus
A display apparatus includes a substrate having a bending region between a first region and a second region, the bending region being configured to be bent...
US-1,005,6445 Manufacture method of AMOLED pixel drive circuit
The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be...
US-1,005,6444 Flexible display device and method of manufacturing the same
A flexible display device includes a substrate, a light emitting layer, a first insulating layer, and a conductive layer. The substrate includes a bent region...
US-1,005,6443 Electronic devices with displays
An electronic device may have a flexible portion that allows the device to be folded. The device may have a flexible display. The flexible display may have edge...
US-1,005,6442 Organic light emitting diode array substrate, method for manufacturing the same and display device
An organic light emitting diode array substrate, a method for manufacturing the same and a display device are provided. The organic light emitting diode array...
US-1,005,6441 Method of manufacturing organic light emitting display device having cathode electrode connected with an...
A method of manufacturing an organic light emitting display (OLED) device can include providing an anode electrode and an auxiliary electrode on a substrate;...
US-1,005,6440 Organic light emitting display device and method of manufacturing the same
Discussed is an organic light emitting display device that may include an active area and a pad area on a substrate, wherein the active area includes an anode...
US-1,005,6439 Image capturing apparatus
An image capturing apparatus including a sensor, an organic light emitting diode (OLED) display panel, and a collimator is provided. The OLED display panel is...
US-1,005,6438 Display device and method of manufacturing the same
A stacked body including an organic film stacked on and in contact with an inorganic substrate, a wiring pattern, a first resin layer, a light-emitting element...
US-1,005,6437 Stereoscopic imaging apparatus and user terminal
The present invention provides a stereoscopic imaging apparatus (100), including: a display module (130), including a display pixel layer (131) and a first...
US-1,005,6436 Organic light emitting display device comprising color filters and method of manufacturing the same
An organic light emitting display device includes a substrate, first electrodes disposed on the substrate; an organic light emitting layer formed on the first...
US-1,005,6435 Organic light emitting diode display
An organic light emitting diode display includes a stretchable substrate, a plurality of pixel forming plates, first and second pixels, and a cut-out groove....
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