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Patent # Description
US-1,009,0177 Cold fluid semiconductor device release during pick and place operations, and associated systems and methods
Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies...
US-1,009,0176 Temperature adjustment device
A temperature adjustment device includes a holding plate having a placing surface on which a processed substrate is placed. The holding plate includes a heating...
US-1,009,0175 Apparatus for manufacturing semiconductor wafer
An apparatus for manufacturing a semiconductor wafer comprises: a wafer chuck which holds the rear surface of a wafer having a via hole; a cap which is...
US-1,009,0174 Apparatus for purging semiconductor process chamber slit valve opening
A semiconductor processing chamber is provided and may include a wafer transfer passage that extends through a chamber wall and has an inner passage surface...
US-1,009,0173 Method of fabricating a chip module with stiffening frame and directional heat spreader
A method of fabricating a chip module is presented. The chip module includes a stiffening frame, a directional heat spreader, a carrier, and a semiconductor...
US-1,009,0172 Semiconductor device with high thermal conductivity substrate and process for making the same
The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a...
US-1,009,0171 Method for manufacturing semiconductor device
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for...
US-1,009,0170 Semiconductor fabrication method including non-uniform cover layer
A method is provided for fabricating a semiconductor structure. The method includes forming a base substrate including a substrate and a stress layer formed in...
US-1,009,0169 Methods of forming integrated circuit structures including opening filled with insulator in metal gate
The disclosure is directed to methods of forming an integrated circuit structure. One method may include: forming a metal gate within a dielectric layer over a...
US-1,009,0168 Plasma etching method
The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas...
US-1,009,0167 Semiconductor device and method of forming same
Semiconductor devices and methods of forming the same are disclosed. A dielectric layer is formed over an underlying layer. A first mask layer and a second mask...
US-1,009,0166 Techniques for forming isolation structures in a substrate
A method may include performing a chemical mechanical polishing (CMP) etch of a fin assembly disposed on a substrate, the fin assembly comprising a plurality of...
US-1,009,0165 Method to improve finFET cut overlay
A patterned photoresist having an overlay tolerance of (x+y)/2 is formed over preselected hard mask portions or semiconductor fin portions, wherein x is a width...
US-1,009,0164 Hard masks for block patterning
Embodiments are directed to a method of forming a semiconductor device and resulting structures having a hard masks for sidewall image transfer (SIT) block...
US-1,009,0163 Inorganic film-forming composition for multilayer resist processes, and pattern-forming method
An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand...
US-1,009,0162 Plasma processing method and plasma processing device
Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface. A plasma...
US-1,009,0161 Plasma etching apparatus and plasma etching method
A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface...
US-1,009,0160 Dry etching apparatus and method
There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and...
US-1,009,0159 Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting...
Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta...
US-1,009,0158 Etching method, method of manufacturing semiconductor chip, and method of manufacturing article
An etching method according to an embodiment includes forming a catalyst layer made of a first noble metal or the combination of the second noble metal and the...
US-1,009,0157 Semiconductor device and manufacturing method thereof
A semiconductor device includes one nanowire structure disposed on semiconductor substrate and extending in first direction on semiconductor substrate. Each...
US-1,009,0156 Method for forming semiconductor structure having stress layers
A method is provided for fabricating a semiconductor structure. The method includes providing a substrate including a first region for forming a first...
US-1,009,0155 Semiconductor device having interconnect structure
Various embodiments provide semiconductor devices. A base including a substrate and an interlayer dielectric layer is provided. The base has a first region and...
US-1,009,0154 Method for preparing a semiconductor structure having second line patterns and third line patterns formed over...
The present disclosure provide a method for preparing a semiconductor structure. The semiconductor structure includes a substrate having a memory array region...
US-1,009,0153 Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer...
US-1,009,0152 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a method of manufacturing a semiconductor device, which includes: forming a seed layer doped with a dopant on a substrate by performing a...
US-1,009,0151 Structure and method to reduce copper loss during metal cap formation
A copper or copper alloy is formed in a reflow enhancement layer lined opening present in an interconnect dielectric material layer. A ruthenium (Ru) or osmium...
US-1,009,0150 Low dielectric constant (low-k) dielectric and method of forming the same
A method of forming a low dielectric constant (low-k) dielectric is disclosed. The method includes providing a substrate and forming a dielectric including...
US-1,009,0149 Method of manufacturing semiconductor device by forming and modifying film on substrate
A method of manufacturing a semiconductor device includes: forming a base film containing a first element and carbon on a substrate by supplying a film forming...
US-1,009,0148 Water-repellent protective film, and chemical solution for forming protective film
A surface treatment was conducted by using a liquid chemical containing a water-repellent protective film forming agent represented by the following general...
US-1,009,0147 Integrated system and method for source/drain engineering
Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching...
US-1,009,0146 Ion profiling with a scanning quadrupole mass filter
A mass spectrometer is disclosed comprising an ion mobility separation device for separating ions according to their ion mobility, a first quadrupole mass...
US-1,009,0145 System and method for testing the chemical content of plastic containers moving along a test line
A system for testing the chemical content of a plurality of plastic containers continuously moving along a test line. The system includes a detector maintained...
US-1,009,0144 Liquid extraction matrix assisted laser desorption ionisation ion source
A Matrix Assisted Laser Desorption Ionization ("MALDI") ion source is disclosed comprising a first device arranged and adapted to supply a flow of liquid on to...
US-1,009,0143 Real time measurement techniques combining light sources and mass spectrometer
The present invention provides a mass spectrometer comprising a sample inlet, an ionization source, a mass analyzer, and an ion detector, wherein the ionization...
US-1,009,0142 Apparatus and method for sampling of confined spaces
In various embodiments of the invention, a cargo container can be monitored at appropriate time intervals to determine that no controlled substances have been...
US-1,009,0141 Ion guide construction method
A method of constructing an ion guide is disclosed comprising providing an elongated spine member and a plurality of plates. Each plate comprises an aperture...
US-1,009,0140 IRMS sample introduction system and method
A sample introduction system for a spectrometer comprises a desolvation region that receives or generates sample ions from a solvent matrix and removes at least...
US-1,009,0139 Mass analysis device
A mass analysis device capable of reliably detecting the peak in a mass chromatogram of a given m/z is equipped with a control unit, which generates a mass...
US-1,009,0138 Compact mass spectrometer
A miniature mass spectrometer is disclosed comprising an atmospheric pressure ionisation source, a first vacuum chamber having an atmospheric pressure sampling...
US-1,009,0137 In--Ce--O-based sputtering target and method for producing the same
[Object] To provide: an In--Ce--O-based sputtering target capable of suppressing nodules and abnormal discharge over a long period, even though the Ce content...
US-1,009,0136 Oxide sintered body and sputtering target, and method for producing same
An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide...
US-1,009,0135 Methods of forming coating layers
A method of forming a coating layer, including preparing hollow inorganic particles, each hollow inorganic particle including a shell surrounding a hollow core;...
US-1,009,0134 Plasma reactor with inductive excitation of plasma and efficient removal of heat from the excitation coil
The plasma reactor of the invention is intended for treating the surfaces of objects such as semiconductor wafers and large display panels, or the like, with...
US-1,009,0133 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and...
A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant...
US-1,009,0132 Charged particle beam irradiation apparatus
A charged particle beam irradiation apparatus according to an embodiment includes: a first scanning electromagnet device configured to deflect a charged...
US-1,009,0131 Method and system for aberration correction in an electron beam system
An electron-optical system for performing electron microscopy is disclosed. The system includes an electron beam source configured to generate a primary...
US-1,009,0130 Magnetron and method of adjusting resonance frequency of magnetron
Provided are a magnetron whose resonance frequency is easily adjusted and a method of adjusting a resonance frequency of the magnetron. A magnetron includes an...
US-1,009,0129 Housing assembly for an electrical switch
A housing assembly is for an electrical switching apparatus. The housing assembly includes a base, a cover, and only one single coupling member extending...
US-1,009,0128 Switch for switching between different high frequency signals
A high frequency switch is provided. The high frequency switch comprises a first high frequency connector, comprising a first inner conductor, integrally formed...
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