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Patent # Description
US-1,009,0076 Anisotropic conductive polymer material
A method for forming a body comprising a mixture of a matrix and conductive particles, whereby the conductive particles are formed into aligned conductive...
US-1,009,0075 Display device connected by anisotropic conductive film
A display device connected by an anisotropic conductive film, wherein the anisotropic conductive film includes conductive particles and has a minimum melt...
US-1,009,0074 Light source module
A light source module is adapted to perform a light irradiation process on an object. The light source module includes a transparent cover, a reflector and a...
US-1,009,0073 Measurement by means of atomic interferometry with multiple species of atoms
Disclosed is a method for measuring an external parameter by atomic interferometry using two sets of atoms that belong to different species. Two measurements...
US-1,009,0072 Three-dimensional metal printing
One or more metal printing techniques are described for generating a three-dimensional metal structure, such as a one-dimensional or two-dimensional...
US-1,009,0071 Systems and methods for disposing of one or more radioactive components from nuclear reactors of nuclear plants
A system for disposing of one or more radioactive components from a nuclear reactor may include a first receptacle configured to receive the one or more...
US-1,009,0070 Electronic dental charting
Systems, methods, electronic devices and computer-readable media for charting dental information are described. The method includes generating or retrieving a...
US-1,009,0069 Systems and methods for data cleansing such as for optimizing clinical scheduling
A scheduling system and method for data cleansing may be used to optimize clinical scheduling. The present disclosure describes receiving clinical record data,...
US-1,009,0068 Method and system for determining whether a monitored individual's hand(s) have entered a virtual safety zone
A system and method that allows caregivers, central monitoring services, and other persons to monitor whether a monitored individual's hand(s) have entered into...
US-1,009,0067 Data storage device with rewritable in-place memory
A data storage device can have at least a buffer memory, a selection module, and a non-volatile memory. The buffer memory and non-volatile memory may consist of...
US-1,009,0066 Semiconductor memory devices, memory systems including the same and method of correcting errors in the same
A semiconductor memory device includes a memory cell array in which a plurality of memory cells are arranged. The semiconductor memory device includes an error...
US-1,009,0065 Simultaneous write, read, and command-address-control calibration of an interface within a circuit
A calibration controller tests an electronic circuit to identify an initial read check with a read delay, an initial write check with a write delay, and an...
US-1,009,0064 Timing based arbiter systems and circuits for ZQ calibration
Systems and apparatuses are provided for an arbiter circuit for timing based ZQ calibration. An example system includes a resistor and a plurality of chips....
US-1,009,0063 System for testing charge trap memory cells
A circuit for testing a memory includes a complementary charge trap memory cell, which includes a first transistor and a second transistor. A logical value of...
US-1,009,0062 Magnetic memory device and controlling method thereof
A magnetic memory device includes a memory cell array comprising memory cells including magnetic tunnel junction elements. Each memory cell is electrically...
US-1,009,0061 Memory test data generating circuit and method
A memory test data generating circuit and method for generating a plurality of sets of test data is provided. The plurality of sets of test data is provided to...
US-1,009,0060 Data communication system and data receiving device
According to one embodiment, a data communication system includes: a data transmitting device that transmits a test pattern; and a data receiving device that...
US-1,009,0059 One time programmable memory and a data writing method thereof
A one time programmable (OTP) memory includes an OTP cell array including a plurality of OTP cells provided at locations where a plurality of word lines and a...
US-1,009,0058 Semiconductor device
A semiconductor device may be provided. The semiconductor device may be configured for detecting a defect of a fuse set. The semiconductor device may include a...
US-1,009,0057 Dynamic strobe timing
Apparatuses, systems, methods, and computer program products are disclosed for dynamic strobe timing. A controller is configured to generate a strobe signal to...
US-1,009,0056 Semiconductor memory device
A semiconductor memory device includes first and second memory cell transistors between first and second select transistors, third and fourth memory cell...
US-1,009,0055 Memory device having negative voltage generator
Provided herein is a voltage generating circuit including: a negative voltage pump configured to generate a first negative voltage; and a negative voltage...
US-1,009,0054 Nonvolatile semiconductor memory device
When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second...
US-1,009,0053 Apparatus, systems, and methods to operate a memory
Various embodiments, disclosed herein, include apparatus and methods to read a logic level in a selected memory cell in a selected string of a memory by sensing...
US-1,009,0052 Sequential write and sequential write verify in memory device
Some embodiments include apparatuses and methods for performing a first stage of an operation of storing information in a first memory cell and a second memory...
US-1,009,0051 Memory array with power-efficient read architecture
Various embodiments comprise apparatuses and methods including a three-dimensional memory apparatus having upper strings and lower strings. The upper strings...
US-1,009,0050 Apparatuses and methods including memory access in cross point memory
Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch...
US-1,009,0049 Semiconductor integrated circuit with resistive change elements intersect with first and second plurality...
An integrated circuit according to an embodiment includes: resistive change elements disposed in intersection regions between first and second wiring lines; a...
US-1,009,0048 Semiconductor memory devices including a memory array and related method incorporating different biasing schemes
Memory devices provide a plurality of memory cells, each memory cell including a memory element and a selection device. A plurality of first (e.g., row) address...
US-1,009,0047 Memory cell structure
A memory cell structure includes a synapse memory cell including plural cell components, each of the plural cell components including a unit cell, plural write...
US-1,009,0046 Nonvolatile memory device and read method thereof
Disclosed is a nonvolatile memory device. The nonvolatile memory device includes a cell array including a plurality of memory cells, a page buffer including a...
US-1,009,0045 Programming method of non volatile memory device according to program speed of memory cells
Provided is a programming method of a nonvolatile memory device including a plurality of memory cells. The programming method of the nonvolatile memory device...
US-1,009,0044 System and method for burst programming directly to MLC memory
A memory system can program data in different modes, such as normal mode programming and burst mode programming. Burst mode programming programs data into the...
US-1,009,0043 Providing controlled pulses for quantum computing
A quantum mechanical radio frequency (RF) signaling system includes a transmission line that receives and conducts an RF pulse signal operating at a radio...
US-1,009,0042 Memory with keeper circuit
A memory device with a keeper circuit is disclosed herein. The memory device (i) improves current tracking between the device's memory cells and the keeper...
US-1,009,0041 Performing logical operations using sensing circuitry
Apparatuses and methods related to performing logical operations using sensing circuitry are provided. One apparatus comprises an array of memory cells, sensing...
US-1,009,0040 Systems and methods for reducing memory power consumption via pre-filled DRAM values
Systems and methods are disclosed for reducing memory power consumption via pre-filled dynamic random access memory (DRAM) values. One embodiment is a method...
US-1,009,0039 Semiconductor memory device that includes a refresh control circuit that maintains a refresh cycle when an MRS...
A semiconductor memory device includes a memory circuit including a plurality of memory cells and a refresh control circuit. The refresh control circuit is...
US-1,009,0038 Semiconductor memory device for deconcentrating refresh commands and system including the same
A memory device includes a buffer memory configured to receive commands from a memory controller via first to N.sup.th channels, wherein N denotes an integer...
US-1,009,0037 Methods of retaining and refreshing data in a thyristor random access memory
A volatile memory array using vertical thyristors is disclosed together with methods of operating the array to read, write, retain and refresh data stored therein.
US-1,009,0036 Non-volatile memory cell having pinch-off ferroelectric field effect transistor
The disclosed technology relates generally to non-volatile memory devices, and more particularly to ferroelectric non-volatile memory devices. In one aspect, a...
US-1,009,0035 Semiconductor devices having separate source line structure
A semiconductor device includes a bit-line sense amplifier (S/A) circuit configured to sense and amplify data stored in a resistive memory cell according to a...
US-1,009,0034 Magnetoelectric memory cells with domain-wall-mediated switching
A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain...
US-1,009,0033 PUF circuit and magnetoresistive device and control method thereof
A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive...
US-1,009,0032 Word line driving unit with a boost voltage generator and memory device including the same
A method includes delaying an input voltage signal to generate an output voltage, enabling a capacitor unit to apply across a word line driver a boosted voltage...
US-1,009,0031 Semiconductor device comprising memory circuit and selection circuit
A novel semiconductor device, a semiconductor device with low power consumption, or a semiconductor device capable of retaining data for a long period is...
US-1,009,0030 Signal conversion using an analog-to-digital converter and reference voltage comparison
Examples disclosed herein relate to a circuit having first and second analog processors and an analog-to-digital converter coupled to the first and second...
US-1,009,0029 Electronic device for suppressing read disturbance and method of driving the same
An electronic device includes a semiconductor memory that includes: a memory cell coupled between first and second lines and having a specific resistance state;...
US-1,009,0028 Semiconductor device and data processing system with coordinated calibration and refresh operations
Provided is a memory control technique for avoiding that the issue of a refresh command and the issue of a calibration command are arranged in succession. The...
US-1,009,0027 Memory system with low read power
A memory system includes a first memory bank, a first path selector, a second memory bank, a second path selector, and a sensing device. The first memory bank...
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