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Patent # Description
US-1,009,6758 Lead frame including a plurality of units connected together and semiconductor device including the lead frame
A lead frame includes a plurality of units connected together. Each unit includes a pair of lead portions spaced apart from and opposite to each other. The lead...
US-1,009,6757 LED package
To prevent cracks on a sealing glass or a substrate in a LED package in which a light-emitting device is sealed with a sealing glass. The LED package comprises...
US-1,009,6756 Side view light emitting diode package
A side view LED package for a backlight unit includes a package body having a cavity with an inclined inner sidewall, first and second lead frames arranged in...
US-1,009,6755 Light emitting diode with low refractive index material layers to reduce light guiding effects
A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one...
US-1,009,6754 Silicone resin film, curable silicone resin composition, optical semiconductor device, and packaging method for...
The disclosure provides a silicone resin film comprising a release substrate and a silicone resin coating layer formed by coating a curable silicone resin...
US-1,009,6753 Light emitting device
A light emitting device has a lens, extended to outside of the mounting substrate on which a semiconductor a light emitting element is mounted, and leakage of...
US-1,009,6752 Manufacturing method for quantum dot color film substrate and quantum dot color film substrate
The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to form a...
US-1,009,6751 Light emitting device
A light emitting device is provided. The light emitting device includes a light emitting element, which emits blue light, and a light transmissive member having...
US-1,009,6750 Display device using semiconductor light emitting device and method for manufacturing
A display device include a substrate including a wiring electrode; an adhesive layer disposed on the substrate; a plurality of semiconductor light emitting...
US-1,009,6749 Illumination light source, illumination apparatus, outdoor illumination apparatus, and vehicle headlight
An illumination light source emits white light resulting from mixing of light emitted from an LED chip and light emitted from a plurality of phosphors. A light...
US-1,009,6748 Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting...
Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are...
US-1,009,6747 Lumen maintenance factor deterioration suppressing LED module
A light-emitting diode (LED) module is provided. The LED module includes a substrate, a metal layer disposed above the substrate, a resist layer disposed above...
US-1,009,6746 Semiconductor element and fabrication method thereof
A semiconductor element includes a super-lattice buffer layer including Al.sub.xN.sub.1-x layers and Al.sub.yO.sub.1-y layers (0<x<1, 0<y<1). The...
US-1,009,6745 Light emitting diode capable of generating different light colors over single wafer
A wafer substrate, a light emitting diode (LED) light-emitting layer, a circuit layer and an excitation material layer are included. The LED light-emitting...
US-1,009,6744 Quantum dot light enhancement substrate and lighting device including same
A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer...
US-1,009,6743 Gigantic quantum dots
Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdSe, a shell...
US-1,009,6742 Light emitting device substrate with inclined sidewalls
A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure...
US-1,009,6741 Sealed body, light-emitting module, and method of manufacturing sealed body
A sealed body in which sealing is uniformly performed is provided. A light-emitting module in which sealing is uniformly performed is provided. A method of...
US-1,009,6740 Method for manufacturing color micro light-emitting diode array substrate
The present invention provides a method for manufacturing a color micro LED array substrate, in which a plurality of monochromic micro LED arrays of different...
US-1,009,6739 Method for manufacturing light absorption layer of thin film solar cell and thin film solar cell using the same
A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be...
US-1,009,6738 Anneal techniques for chalcogenide semiconductors
Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in...
US-1,009,6737 Semiconductor chip having tampering feature
Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device...
US-1,009,6736 P-Type chalcogenide and n-type silicon heterojunction infared photodiodes and method of manufacturing thereof
A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type...
US-1,009,6735 Photodetector using bandgap-engineered 2D materials and method of manufacturing the same
A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first...
US-1,009,6734 Methods of forming colloidal nanocrystal-based thin film devices
Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a...
US-1,009,6733 Methods for the preparation of colloidal nanocrystal dispersion
Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed...
US-1,009,6732 Backsheet for photovoltaic modules
A backsheet for a photovoltaic module includes a support and a weather resistant layer, the weather resistant layer including a binder containing a...
US-1,009,6731 Method for thin-film via segments in photovoltaic device
A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165', 167)...
US-1,009,6730 High-performance image sensors including those providing global electronic shutter
In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under one range...
US-1,009,6729 High-performing bulk photovoltaics
The present invention provides materials with high bulk photovoltaic effect response. The present invention also provides for products comprising the high bulk...
US-1,009,6728 Firing metal for solar cells
A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. Selective firing of a conductive paste can be used to form a...
US-1,009,6727 Method of manufacturing finger electrode for solar cell
A method of manufacturing a finger electrode for a solar cell, the method including printing a conductive paste on a front surface of a substrate using a...
US-1,009,6726 All front contact solar cell
A photovoltaic solar cell, including an N-side layer proximate to a first planar surface and a P-side layer proximate to a second planar surface that is...
US-1,009,6725 Method for graded anti-reflective coatings by physical vapor deposition
A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the...
US-1,009,6724 Radiation detector comprising a compensating sensor
A chip for radiation measurements, the chip comprising a first substrate comprising a first sensor and a second sensor. The chip moreover comprises a second...
US-1,009,6723 Semiconductor device
A semiconductor device including a substrate, an isolation structure, a diode element, and a first metal layer is provided. The isolation structure is located...
US-1,009,6722 Semiconductor device and method of forming the same
A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the...
US-1,009,6721 Semiconductor device, module, and electronic device
To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The...
US-1,009,6720 Transistor, semiconductor device, and electronic device
To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from...
US-1,009,6719 Insulating film, method for manufacturing semiconductor device, and semiconductor device
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film...
US-1,009,6718 Transistor, electronic device, manufacturing method of transistor
Reducing the power consumption of a transistor and stably controlling its threshold value. Providing a transistor comprising a first conductive layer, a first...
US-1,009,6717 MOSFET and method for manufacturing the same
The present disclosure discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer comprising a semiconductor...
US-1,009,6716 Thin film transistor array panel and method of manufacturing the same
A thin film transistor array panel includes a substrate; a data line disposed on the substrate; a buffer layer disposed on the substrate and spaced apart from...
US-1,009,6715 Semiconductor device, method for manufacturing the same, and electronic device
The semiconductor device includes a first insulating layer; a first oxide semiconductor; a first insulator containing indium, an element M (M is gallium,...
US-1,009,6714 Integrated circuit device and method of manufacturing the same
An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair...
US-1,009,6713 FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
After forming a gate structure over a semiconductor fin that extends upwards from a semiconductor substrate portion, a sigma cavity is formed within the...
US-1,009,6712 FinFET device and method of forming and monitoring quality of the same
A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The method includes the steps of:...
US-1,009,6711 Silicon-containing, tunneling field-effect transistor including III-N source
Tunneling field-effect transistors including silicon, germanium or silicon germanium channels and III-N source regions are provided for low power operations. A...
US-1,009,6710 Method of forming strained structures of semiconductor devices
A method of fabricating a semiconductor device comprises providing a substrate with a shallow trench isolation (STI) within the substrate and a gate stack. A...
US-1,009,6709 Aspect ratio trapping (ART) for fabricating vertical semiconductor devices
Aspect ratio trapping (ART) approaches for fabricating vertical semiconductor devices and vertical semiconductor devices fabricated there from are described....
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