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Patent # Description
US-1,009,6506 Reducing temperature transition in a substrate support
A temperature controller for a substrate processing system includes an interface configured to receive a processing temperature corresponding to a desired...
US-1,009,6505 Wafer cassette
A wafer cassette includes a case, a plurality of wafer trays, and a plurality of transmission mechanisms. The wafer trays are disposed in the case. Each of the...
US-1,009,6504 Method for managing atmosphere in storage container
A method for managing an atmosphere in a storage container in a processing apparatus including a substrate transfer region and a container transfer region which...
US-1,009,6503 Stopper for substrate cassette and substrate cassette assembly
The present invention provides a stopper for a substrate cassette and a substrate cassette assembly, belonging to the technical field of manufacturing of...
US-1,009,6502 Method and apparatus for assembling and testing a multi-integrated circuit package
An example clamping assembly tray for packaging a semiconductor device includes a frame having a bottom surface and side walls extending from the bottom surface...
US-1,009,6501 Maintenance method of substrate processing apparatus, method for manufacturing semiconductor device, substrate...
A maintenance method of a substrate processing apparatus includes a first processing step of carrying a first substrate holder holding a substrate into a...
US-1,009,6500 Simultaneous wafer ID reading
The present invention discloses apparatuses and methods for simultaneous viewing and reading top and bottom images from a workpiece. The present ID reader can...
US-1,009,6499 Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system
A substrate processing method of the present disclosure includes forming a film on a workpiece using a processing gas in a processing chamber with a setting...
US-1,009,6498 Adjustable spatial filter for laser scribing apparatus
An apparatus for radiatively scribing a planar semiconductor substrate along a scribelane that extends between opposing rows of semiconductor devices on a...
US-1,009,6497 Substrate liquid processing apparatus, substrate liquid processing method and storage medium
A substrate liquid processing apparatus includes a liquid processing unit configured to process a substrate by a processing liquid, and a controller. The...
US-1,009,6496 Process chamber for etching low K and other dielectric films
Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k...
US-1,009,6495 Substrate processing apparatus
A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to...
US-1,009,6494 Substrate support with symmetrical feed structure
Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for...
US-1,009,6493 Substrate treatment apparatus, and substrate treatment method
The inventive substrate treatment apparatus includes: a rotative treatment control unit which controls a first chemical liquid supplying unit and a second...
US-1,009,6492 Substrate cleaning apparatus and polishing apparatus
A substrate cleaning apparatus capable of preventing a cleaning vessel from being corroded by a chemical liquid while constituting the cleaning vessel with a...
US-1,009,6491 Method of fabricating a packaging substrate including a carrier having two carrying portions
A method of fabricating a packaging substrate is provided, including: providing a carrier having two carrying portions, each of the carrying portions having a...
US-1,009,6490 Semiconductor package with multiple molding routing layers and a method of manufacturing the same
Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing...
US-1,009,6489 Method for manufacturing semiconductor device
Provided is a method for manufacturing a semiconductor device with favorable electrical characteristics. The following steps are performed in the following...
US-1,009,6488 FinFET semiconductor structures and methods of fabricating same
The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor...
US-1,009,6487 Atomic layer etching of tungsten and other metals
Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch...
US-1,009,6486 Substrate processing apparatus, substrate processing method and substrate processing liquid
In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a...
US-1,009,6485 Semiconductor device and method of manufacturing the same
In one embodiment, a method of manufacturing a semiconductor device includes forming a plug in a first insulator, forming a first film on the first insulator...
US-1,009,6484 Vertical transistor with a body contact for back-biasing
A method of forming a substrate contact in a vertical transistor device includes patterning a sacrificial layer to form an opening in the sacrificial layer, the...
US-1,009,6483 Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device...
A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be...
US-1,009,6482 Apparatus and method for chemical mechanical polishing process control
An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is...
US-1,009,6481 Method for forming semiconductor structure
A method for forming a semiconductor device structure is provided. The method includes forming a bottom layer over a substrate and forming a middle layer over...
US-1,009,6480 Method and apparatus for dynamic control of the temperature of a wet etch process
A method for controlling the temperature profile of phosphoric acid process over a wafer surface through the dynamic control of radial dispensing of sulfuric...
US-1,009,6479 Method of fabricating semiconductor device
Provided is a method of fabricating a semiconductor device. In the method, a double patterning technology is used to form various patterns with different widths.
US-1,009,6478 System and method for rejuvenating an imaging sensor degraded by exposure to extreme ultraviolet or deep...
The present invention for imaging sensor rejuvenation may include a rejuvenation illumination system configured to selectably illuminate a portion of an imaging...
US-1,009,6477 Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam...
An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based...
US-1,009,6476 Composition for manufacturing semiconductor device and method of manufacturing semiconductor device using the...
A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide...
US-1,009,6475 System and method for depositing a homogenous interface for PECVD metal-doped carbon hardmasks
A method for depositing a hardmask layer on a substrate includes nitridating a first layer of the substrate. The first layer is selected from a group consisting...
US-1,009,6474 Methods and structures to prevent sidewall defects during selective epitaxy
Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or...
US-1,009,6473 Formation of a layer on a semiconductor substrate
Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a...
US-1,009,6472 Single crystal rhombohedral epitaxy of SiGe on sapphire at 450.degree. C.-500.degree. C. substrate temperatures
Various embodiments may provide a low temperature (i.e., less than 850.degree. C.) method of Silicon-Germanium (SiGe) on sapphire (Al.sub.2O.sub.3)...
US-1,009,6471 Partial net shape and partial near net shape silicon carbide chemical vapor deposition
A method for fabricating a structure having surfaces exposed to plasma in a substrate processing system includes providing a sacrificial substrate having a...
US-1,009,6470 Method of producing a silicon carbide single-crystal substrate by epitaxial growth of a SiC epitaxial film on a...
A method of growing a single-crystal, silicon carbide epitaxial film on a silicon carbide substrate by chemical vapor deposition is disclosed that results in a...
US-1,009,6469 Sn doped ZnS nanowires for white light source material
According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes...
US-1,009,6468 Method of improving adhesion
A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer...
US-1,009,6467 Semiconductor device and method of manufacturing the same
In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become...
US-1,009,6466 Pulsed plasma for film deposition
Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a)...
US-1,009,6465 Substrate processing method, substrate processing apparatus and recording medium
A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution...
US-1,009,6464 Atomic layer deposition of high density silicon dioxide
Atomic layer deposition methods for the low temperature deposition of silicon dioxide films having low nitrogen content and low wet etch rates. Silicon dioxide...
US-1,009,6463 Method of manufacturing semiconductor device, substrate processing apparatus comprising exhaust port and...
A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle...
US-1,009,6462 Substrate processing method and storage medium
A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during...
US-1,009,6461 Semiconductor cleaner systems and methods
An EUV cleaner system and process for cleaning a EUV carrier. The EUV cleaner system comprises separate dirty and cleaned environments, separate cleaning...
US-1,009,6460 Semiconductor wafer and method of wafer thinning using grinding phase and separation phase
A semiconductor wafer has a base material. The semiconductor wafer may have an edge support ring. A grinding phase of a surface of the semiconductor wafer...
US-1,009,6459 Mass filtering of ions using a rotating field
Systems and methods for filtering a continuous beam of ions are provided. An acceleration electric field is applied to a continuous beam of ions using an...
US-1,009,6458 Compact mass spectrometer
A miniature mass spectrometer is disclosed comprising an atmospheric pressure ionization source, a first vacuum chamber having an atmospheric pressure sampling...
US-1,009,6457 Oxidation resistant induction devices
Certain embodiments described herein are directed to induction devices comprising an oxidation resistant material. In certain examples, the induction device...
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