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Patent # Description
US-1,010,3298 LED module
A light emitting diode (LED) module which includes: a substrate; a resist including a plurality of layers above the substrate; and an LED element mounted above...
US-1,010,3297 Encapsulation of light-emitting elements on a display module
A display module comprises a circuit board having a front face, a plurality of light-emitting elements electrically coupled to the front face of the circuit...
US-1,010,3296 Method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device
A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes...
US-1,010,3295 Manufacturing method of light emitting device package
An embodiment relates to a light emitting device package and a manufacturing method of the light emitting device package. The light emitting device package...
US-1,010,3294 Equipment system using deformable organic silicone resin photoconverter to bond-package LED
An equipment system for bond-packaging an LED using a special-shaped organic silicone resin photoconverter includes: a roll-laminating apparatus used for...
US-1,010,3293 Tuned light emitting devices
Methods of treating an emission spectrum of visible light emitted from a light emitting source, and resulting apparatus, are disclosed. The methods include...
US-1,010,3292 Mixed-light generation apparatus
Disclosed is a mixed-light generation apparatus configured to generate mixed-light by mixing light generated from three or more LED-fluorescent combinations...
US-1,010,3291 Light-emitting package structure provided with predetermined view angle, light-emitting package module and...
A method for forming a light-emitting package structure provided with a predetermined view angle is provided. The method includes the steps of: disposing a flip...
US-1,010,3290 Ultrathin solid state dies and methods of manufacturing the same
Various embodiments of SST dies and solid state lighting ("SSL") devices with SST dies, assemblies, and methods of manufacturing are described herein. In one...
US-1,010,3289 Light-emitting diode
A light-emitting diode having a stack-like structure, whereby the stack-like structure comprises a substrate layer and a mirror layer and an n-doped bottom...
US-1,010,3288 Transfer chamber metrology for improved device yield
Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL...
US-1,010,3287 Semiconductor arrangement and formation thereof
A semiconductor arrangement and method of formation are provided herein. A semiconductor arrangement includes an active area on a substrate, where the active...
US-1,010,3286 Packaging method of long-distance sensor
A package structure of a long-distance sensor includes a substrate, a light-emitting chip, a sensing chip, two packaging gel bodies, and a cap. The substrate...
US-1,010,3285 Semiconductor device and method of manufacturing the same
A semiconductor device includes a substrate, a buried doped layer, a first doped well, a multiplication region and a first contact doped region. The substrate...
US-1,010,3284 Apparatus for the industrial production of photovoltaic concentrator modules
Apparatus for the industrial production of photovoltaic concentrator modules, consisting of a module frame, a lens disc, a sensor carrier disc and an electrical...
US-1,010,3283 Method of production of back-contact back-sheet for photovoltaic modules
The present invention provides a method for producing a back-contact back-sheet for a photovoltaic module comprising back-contact cells. The method comprising...
US-1,010,3282 Direct texture transparent conductive oxide served as electrode or intermediate layer for photovoltaic and...
The present invention provides transparent semiconducting films for constructing a translucent electrode that possess a high transparency and low sheet...
US-1,010,3281 Thin refractory metal layer used as contact barrier to improve the performance of thin-film solar cells
A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The...
US-1,010,3280 Rapid melt growth photodetector
Photodetector including: a waveguide of a waveguide material extending over a substrate; an insulating layer formed over the waveguide and having an opening...
US-1,010,3279 High voltage PIN diode
A PIN diode is formed on an insulating structure on a substrate of semiconductor. The insulating structure is disposed on a high voltage doped region in the...
US-1,010,3278 Silicon IMPATT diode
A method to integrate a vertical IMPATT diode in a planar process.
US-1,010,3277 Method for manufacturing oxide semiconductor film
A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher...
US-1,010,3276 Thin film transistor substrate
A thin film transistor substrate includes: a plurality of pixels arranged in a matrix, each of the pixels including: a thin film transistor including: a gate...
US-1,010,3275 Semiconductor device
An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit...
US-1,010,3274 Semiconductor device
A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive...
US-1,010,3273 Semiconductor structure
A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of...
US-1,010,3272 Semiconductor device and method for manufacturing the same
Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have...
US-1,010,3271 Semiconductor device
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current...
US-1,010,3270 Semiconductor device
It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having...
US-1,010,3269 Thin-film transistor substrate having a light reflection reduction layer and display device comprising same
The present specification relates to a thin-film transistor substrate and a display device including the same.
US-1,010,3268 Vertical junctionless transistor devices
A semiconductor device includes a silicon substrate, a silicon germanium (SiGe) layer including a lower portion extending over the silicon substrate and a fin...
US-1,010,3267 Method of forming FinFET gate oxide
A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate...
US-1,010,3266 Semiconductor devices having lower and upper fins and method for fabricating the same
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and...
US-1,010,3265 Complementary metal oxide semiconductor device and method of forming the same
A CMOS device is disclosed, including a plurality of active regions having a length along a first direction, wherein the active regions are arranged end-to-end...
US-1,010,3264 Channel strain control for nonplanar compound semiconductor devices
A circuit device having differently-strained NMOS and PMOS FinFETs is provided. In an exemplary embodiment, a semiconductor device includes a substrate with a...
US-1,010,3263 Strained channel region transistors employing source and drain stressors and systems including the same
Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source...
US-1,010,3262 Method of forming a finFET structure with high quality EPI film
A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a...
US-1,010,3261 Transient-insensitive level shifter
In a described example, an apparatus includes at least one latch coupled to a first positive supply voltage and to a first negative supply voltage, the latch...
US-1,010,3260 Semiconductor device structure having low Rdson and manufacturing method thereof
A semiconductor device including a first P-type well region and an asymmetric second P-type well region each formed in a semiconductor substrate; a gate...
US-1,010,3259 Method of manufacturing a wide bandgap vertical-type MOSFET
An interlayer insulating film is formed on a gate insulating film and a gate electrode, and the interlayer insulating film is opened forming contact holes....
US-1,010,3258 Laterally diffused metal oxide semiconductor with gate poly contact within source window
An integrated circuit includes a power transistor having at least one transistor finger that lies within a semiconductor material substrate. Each transistor...
US-1,010,3257 Termination design for trench superjunction power MOSFET
A plurality of trench stripes are disposed in parallel in an epitaxial layer on a drain and extends from a top region to a bottom region of a first surface of...
US-1,010,3256 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device, including a first groove, a second groove and a first impurity region provided on a semiconductor substrate, a second impurity region...
US-1,010,3255 Semiconductor device
A semiconductor device includes: a semiconductor substrate having a drift layer; a base layer and a carrier storage layer over the drift layer; a collector...
US-1,010,3254 Semiconductor die fabrication methods
Systems and methods are disclosed for fabricating a semiconductor die that includes one or more bipolar transistors disposed on or above a high-resistivity...
US-1,010,3253 Structure and method for vertical tunneling field effect transistor with leveled source and drain
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first...
US-1,010,3252 Vertical junction FinFET device and method for manufacture
A vertical junction field effect transistor (JFET) is supported by a semiconductor substrate that includes a source region within the semiconductor substrate...
US-1,010,3251 Punch through stopper in bulk finFET device
A method of forming a semiconductor device that includes forming a fin structure from a bulk semiconductor substrate and forming an isolation region contacting...
US-1,010,3250 Method of fabricating semiconductor device
A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a gate structure, an epitaxial layer, an...
US-1,010,3249 FinFET device and method for fabricating the same
A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins and a source/drain structure. The semiconductor fins and the...
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