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Patent # Description
US-1,010,3248 Method for manufacturing a high-voltage FinFET device having LDMOS structure
A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The method includes: providing a substrate with a fin...
US-1,010,3247 Vertical transistor having buried contact, and contacts using work function metals and silicides
Methods form a structure having a lower source/drain contacting a substrate at the bottom of a transistor. A semiconductor fin extends from the lower...
US-1,010,3246 Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges
A method of forming a vertical fin field effect transistor with a self-aligned gate structure, comprising forming a plurality of vertical fins on a substrate,...
US-1,010,3245 Embedded shape sige for strained channel transistors
An integrated circuit die includes a silicon substrate. PMOS and NMOS transistors are formed on the silicon substrate. The carrier mobilities of the PMOS and...
US-1,010,3244 Drain extended MOS transistors with split channel
A method of making a semiconductor device is provided. The method includes forming a deep well (DWELL) and a well (WELL) in a first region of a substrate, the...
US-1,010,3243 Unipolar spacer formation for finFETS
A semiconductor device includes semiconductor fins formed on a substrate, gate structures formed transversely over the fins, unipolar spacers formed over the...
US-1,010,3242 Growing groups III-V lateral nanowire channels
In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to...
US-1,010,3241 Multigate transistor
A multigate transistor is formed on a wafer with a first material and a second material. Portions of the second material are selectively removed from the first...
US-1,010,3240 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+...
US-1,010,3239 High electron mobility transistor structure
A high electron mobility transistor (HEMT) structure including a substrate, a barrier layer, a buffer layer, a source, a drain, a multi-gate structure, and a...
US-1,010,3238 Nanosheet field-effect transistor with full dielectric isolation
Methods for forming a structure for a nanosheet field-effect transistor. A body feature is formed that includes a plurality of nanosheet channel layers and a...
US-1,010,3237 Inverted MOSFET with scaling advantage
After forming a gate structure wrapping around a suspended channel portion of a semiconductor fin located on an insulator layer, a gate cap is formed atop the...
US-1,010,3236 Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device includes forming a conductive pattern on a substrate, forming a filling insulation layer covering the...
US-1,010,3235 Gate structure with multiple spacers
Semiconductor structures are provided. The semiconductor structure includes a substrate and a floating gate structure formed over the substrate. The...
US-1,010,3234 Fabricating raised source drain contacts of a CMOS structure
The invention relates to a method for forming a field effect transistor. The method comprises providing a substrate with a channel layer, forming a gate stack...
US-1,010,3233 Transistor die with drain via arrangement, and methods of manufacture thereof
An embodiment of a transistor die includes a semiconductor substrate a drain region, a channel region, a drain terminal, and a conductive gate tap. The...
US-1,010,3232 Semiconductor device and method for manufacturing semiconductor device
A semiconductor device (100) includes a base layer (10), an interface layer (20), and a deposition layer (30). The base layer (10) includes a nitride...
US-1,010,3231 Semiconductor device
According to one embodiment, a semiconductor device includes a first element portion. The first element portion includes first and second semiconductor layers,...
US-1,010,3230 Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide...
A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift...
US-1,010,3229 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a wide-bandgap semiconductor substrate of a first conductivity type, a wide-bandgap semiconductor deposition layer of the first...
US-1,010,3228 Semiconductor device having a super junction structure
A semiconductor device includes a semiconductor layer, having a drain region, a body region, and a source region, a gate electrode, facing the body region via a...
US-1,010,3227 Method for manufacturing a power semiconductor device
A method for manufacturing a power semiconductor device includes: forming a drift region of a first conductivity type, a second emitter region of a second...
US-1,010,3226 Method of fabricating tunnel transistors with abrupt junctions
A method of manufacturing a tunnel field effect transistor (TFET) includes forming on a substrate covered by an epitaxially grown source material a dummy gate...
US-1,010,3225 Food and beverage compositions infused with lipophilic active agents and methods of use thereof
Aspects described herein relate to food and beverage compositions infused with lipophilic active agents and methods of use for the treatment of a variety of...
US-1,010,3224 Semiconductor structure including a trench capping layer
A semiconductor structure includes a trench isolation structure and a trench capping layer positioned over the trench isolation structure, wherein the trench...
US-1,010,3223 High voltage resistor with pin diode isolation
Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located...
US-1,010,3222 Semiconductor device
A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided...
US-1,010,3221 Power semiconductor device
The present examples relate to a power semiconductor device. The present examples also relate to a power semiconductor device that maintains a breakdown voltage...
US-1,010,3220 Method of manufacturing semiconductor device
An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A...
US-1,010,3219 Power semiconductor device and method for manufacturing the same
The present disclosure discloses a power semiconductor device and a method for manufacturing the same. The power semiconductor device comprises: a substrate, a...
US-1,010,3218 Densely stacked metal-insulator-metal capacitor and method of forming the same
A metal-insulator-metal capacitor (MIM cap) includes a dielectric layer disposed over a substrate three contacts. A stacked structure of first and second metal...
US-1,010,3217 Semiconductor device having inductor
A semiconductor device includes an insulating layer disposed over a substrate, wherein the insulating layer has a center region. A first winding portion and a...
US-1,010,3216 Thin film transistor substrate for flat panel display
The present disclosure relates to a thin film transistor substrate for flat panel display including an organic light emitting diode display. The present...
US-1,010,3215 Display panel and display device containing display panel
The present disclosure provides a display panel and a display device including the display panel. The display panel includes a display area and a peripheral...
US-1,010,3214 Display device
A display device is disclosed. In one aspect, the device includes a plurality of pixels arranged in rows and columns, each pixel including a transistor that...
US-1,010,3213 Organic light emitting display device and method for manufacturing the same
Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method...
US-1,010,3212 Display device, method of manufacturing the same, and electronic apparatus
There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of...
US-1,010,3211 Luminescent device having light-emitting element and transistor
In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as...
US-1,010,3210 Organic light emitting display device
An organic light emitting display device is discussed. The organic light emitting display device according to an embodiment includes a base substrate, a buffer...
US-1,010,3209 Touch sensible organic light emitting device
Embodiments of the present invention generally relate to a touch sensible organic light emitting device. The organic light emitting device according to an...
US-1,010,3208 Display device
A display device includes a scan line extending in a first direction, a data line and a driving voltage line extending in a second direction crossing the first...
US-1,010,3207 Display device
The present disclosure relates to a display device in the field of display. The display device comprises a plurality of sub-pixel areas, each of which...
US-1,010,3206 Display device and manufacturing method of the same
Provided is a manufacturing method of a display device, which includes: forming a first electrode; forming a first insulating film covering an edge portion of...
US-1,010,3205 Subpixel arrangements of displays and method for rendering the same
An apparatus including a display and control logic. In one example, the display includes an array of subpixel groups. Each of the subpixel groups includes one...
US-1,010,3204 Flexible display apparatus and method of manufacturing flexible display apparatus
A flexible display apparatus and a method of manufacturing the flexible display apparatus that includes a first cover, a display panel configured to be disposed...
US-1,010,3203 Display unit and electronic apparatus
A display unit includes a display region, a peripheral region, an insulating layer, a separating groove, and a sealing section. A plurality of pixels are...
US-1,010,3202 Organic element
In an organic EL element including a positive electrode, a negative electrode, and a light emitting layer (recombination layer) provided between the positive...
US-1,010,3201 Flexible display device
A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The...
US-1,010,3200 Resistive switching random access memory with asymmetric source and drain
A resistive random access memory (RRAM) structure includes a resistive memory element formed on a semiconductor substrate and designed for data storage. The...
US-1,010,3199 Magnetic memory
A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the...
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