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Patent # Description
US-1,010,3046 Buffer chamber wafer heating mechanism and supporting robot
Buffer chamber including robots, a carousel and at least one heating module for use with a batch processing chamber are described. Robot configurations for...
US-1,010,3045 Vertical fixing transmission box and transmission method using the same
A vertical fixing transmission box used for transmitting a container is disclosed. The transmission box includes a carrier substrate and an elastic component,...
US-1,010,3044 Processing apparatus
A processing apparatus includes a cassette rest unit from which a wafer is fed by an unloading unit and a feed unit to a plurality of processing units, in which...
US-1,010,3043 Apparatus for transferring substrate and apparatus for processing substrate including the same
The inventive concepts provide apparatuses for transferring a substrate and/or apparatuses for processing a substrate including the same. The substrate...
US-1,010,3042 Chamber, semiconductor processing station, and semiconductor process using the same
A chamber includes a sidewall, a cooling pipe, and an external pipe. The cooling pipe includes a first segment extending along the sidewall of the chamber, and...
US-1,010,3041 Component transfer apparatus and suction position adjustment method for component transfer apparatus
A component transfer apparatus includes: an upthrust section that thrusts up a wafer component held by a wafer holding table from below; an extraction head that...
US-1,010,3040 Apparatus and method for manufacturing a semiconductor device
The invention relates to an apparatus for manufacturing a semiconductor device comprising a reaction chamber comprising a substrate holder for holding a...
US-1,010,3038 Thrumold post package with reverse build up hybrid additive structure
Semiconductor devices having a semiconductor die electrically coupled to a redistribution structure and a molded material over the redistribution structure are...
US-1,010,3037 Flexible microelectronic systems and methods of fabricating the same
Microelectronic systems encapsulated in a stretchable/flexible material, which is skin/bio-compatible and able to withstand environmental conditions. In one...
US-1,010,3036 Packing method for semiconductor device
A packing method for a semiconductor device includes a step of preparing the semiconductor device that has a sealing body having a principal surface and a...
US-1,010,3035 Copper-ceramic bonded body and power module substrate
There is a provided a copper-ceramic bonded body in which a copper member formed of copper or a copper alloy and a ceramic member formed of nitride ceramic are...
US-1,010,3034 Method of planarizing substrate surface
A method of planarizing a substrate surface is disclosed. A substrate having a major surface of a material layer is provided. The major surface of the material...
US-1,010,3033 Manufacturing method of semiconductor device
An object of the present invention is to provide a semiconductor device including a film to be processed having a uniform height. A first coating film made of...
US-1,010,3032 Methods of forming etch masks for sub-resolution substrate patterning
Techniques disclosed herein provide a method and fabrication structure for pitch reduction for creating high-resolution features and also for cutting on pitch...
US-1,010,3031 Chemistries for TSV/MEMS/power device etching
Replacement chemistries for the cC.sub.4F.sub.8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have...
US-1,010,3030 Methods of fabricating semiconductor devices
A method of fabricating a semiconductor device includes sequentially forming a first insulation pattern and an etch stop pattern on a peripheral circuit area of...
US-1,010,3029 Process for filling vias in the microelectronics
A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing...
US-1,010,3028 Contact integration and selective silicide formation methods
Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and...
US-1,010,3027 Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar...
US-1,010,3026 Methods of forming material layer
A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material...
US-1,010,3025 Multi-gate FETs and methods for forming the same
A method includes oxidizing a semiconductor fin to form an oxide layer on opposite sidewalls of the semiconductor fin. The semiconductor fin is over a top...
US-1,010,3024 Phase change memory with diodes embedded in substrate
An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode...
US-1,010,3023 Semiconductor device fabrication method
With a semiconductor device fabrication method, an oxide film and a thermal oxide film formed over a semiconductor substrate are etched and ions are implanted...
US-1,010,3022 Alternating hardmasks for tight-pitch line formation
Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled fins...
US-1,010,3021 Thermally oxidized heterogeneous composite substrate and method for manufacturing same
A thermally oxidized heterogeneous composite substrate provided with a single crystal silicon film on a handle substrate, said heterogeneous composite substrate...
US-1,010,3020 Substrate processing apparatus
A substrate processing apparatus includes a substrate holding part, a substrate rotating mechanism, a processing liquid supply part for supplying a processing...
US-1,010,3019 Manufacturing method for forming a semiconductor structure
The present invention provides a method of fabricating a semiconductor structure. Firstly, a substrate is provided, a dense region and an isolation region are...
US-1,010,3018 Apparatus for treating substrate
Provided is a substrate treatment apparatus using plasma. The substrate treatment apparatus includes a housing having an inner space in which a substrate is...
US-1,010,3017 Dispenser system for mass spectrometric sample preparations
The invention relates to the preparation of samples on mass spectrometric sample supports with dispensing of liquids, and particularly to devices and methods to...
US-1,010,3016 Sample supporting body and method of manufacturing sample supporting body
A sample support according to an aspect is a sample support for a surface-assisted laser desorption/ionization method, and includes: a substrate in which a...
US-1,010,3015 Sampling interface for mass spectrometry systems and methods
Methods and systems for delivering a liquid sample to an ion source for the generation of ions and subsequent analysis by mass spectrometry are provided herein....
US-1,010,3014 Ion transfer device for mass spectrometry
An ion transfer device for transferring ions from one chamber to another, reduced-pressure chamber includes an inlet section and a main capillary section. The...
US-1,010,3013 Collision cells and methods of using them
Certain embodiments described herein are directed to collision cells that comprise one or more integrated lenses. In some examples, a lens is coupled to two...
US-1,010,3012 One-piece process kit shield for reducing the impact of an electric field near the substrate
Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield configured...
US-1,010,3011 Plasma processing method and plasma processing apparatus
A plasma processing apparatus 1 includes a chamber 10, a mounting table 16, a focus ring 24a, a first electrode plate 36 and a second electrode plate 35. The...
US-1,010,3010 Adjustable extended electrode for edge uniformity control
Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber...
US-1,010,3009 Plasma processing device and operation method
An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a...
US-1,010,3008 Charged particle beam-induced etching
A micromachining process includes exposing the work piece surface to a precursor gas including a compound having an acid halide functional group; and...
US-1,010,3007 Plasma processing apparatus with gas feed and evacuation conduit
A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded,...
US-1,010,3006 Elementary device for applying a microwave energy with a coaxial applicator
An elementary device of the present disclosure includes a coaxial applicator that includes a connector disposed at a distal end of the applicator, a shielding,...
US-1,010,3005 Imaging low electron yield regions with a charged beam imager
Disclosed herein are a system and method for imaging low electron yield regions with a charged beam imager. In certain embodiments, a system may include a...
US-1,010,3004 System and method for imaging a secondary charged particle beam with adaptive secondary charged particle optics
A method of imaging a secondary charged particle beam emanating from a sample by impingement of a primary charged particle beam is provided. The method includes...
US-1,010,3003 Charged particle beam device and sample observation method in charged particle beam device
The charged particle beam device comprises: an electron gun for generating an electron beam; an imaging lens system for imaging the electron beam that has...
US-1,010,3002 Method for generating an image of an object and particle beam device for carrying out the method
The invention relates to a method for generating an image of an object (114) using a particle beam device (100) generating a beam of charged particles....
US-1,010,3001 Double-tilt in-situ mechanical sample holder for TEM based on piezoelectric ceramic drive
A double-tilt in-situ mechanical sample holder for TEM based on piezoelectric ceramic drive belongs to the field of material microstructure-mechanical...
US-1,010,3000 Double-tilt sample holder for transmission electron microscope
A double-tilt sample holder for TEM, comprising: it comprise the main body of sample holder body, front-end tilt stage, drive rod, linkage, tilt axis, rotation...
US-1,010,2999 Asymmetric core quadrupole with concave pole tips
A magnetic assembly for focusing an electron beam includes one or more quadrupole assemblies, each quadrupole assembly having at least a pair of separate...
US-1,010,2998 Energy radiation generator with bi-polar voltage ladder
A well-logging tool may include a sonde housing, and a radiation generator carried by the sonde housing. The radiation generator may include a generator...
US-1,010,2997 X-ray source, high-voltage generator, electron beam gun, rotary target assembly, rotary target, and rotary...
Disclosed herein are a high-voltage generator for an x-ray source, an x-ray gun, an electron beam apparatus, a rotary vacuum seal, a target assembly for an...
US-1,010,2996 Method for manufacturing a trench channel for vacuum transistor device and vacuum transistor device
A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening,...
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