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Patent # Description
US-1,013,4983 Nonvolatile resistive switching memory device and manufacturing method thereof
A nonvolatile resistive switching memory, comprising an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode,...
US-1,013,4982 Array of cross point memory cells
An array of cross point memory cells comprises spaced first lines which cross spaced second lines. Two memory cells are individually between one of two...
US-1,013,4981 Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance...
A magnetic tunnel junction (MTJ) that avoids electrical shorts and has improved data retention is disclosed. An uppermost capping layer has a first sidewall...
US-1,013,4980 Magnetoresistive random access memory device
In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An...
US-1,013,4979 Strontium oxide as a tunnel barrier for spin injection and giant spin accumulation
A spintronic device is disclosed. The spintronic device includes a spin current transport layer, a spin injector, and a spin detector. The spin injector...
US-1,013,4978 Magnetic cell structures, and methods of fabrication
A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a...
US-1,013,4977 Piezoelectric element, method for manufacturing the same, and piezoelectric element-applied device
A piezoelectric element has, from a substrate side, a first electrode, a piezoelectric layer containing a composite oxide of an ABO.sub.3 type perovskite...
US-1,013,4975 Electromechanical actuator
An electromechanical actuator includes an oscillation resonator having the shape of a rod. The oscillation resonator is divided by a dividing plane that is not...
US-1,013,4974 Method for identifying an overcurrent when charging a piezo actuator
A method for identifying an overcurrent when charging a piezo actuator, by periodically connecting and disconnecting the piezo actuator to and from an energy...
US-1,013,4973 Ultrasonic transducer and manufacture method thereof
The present application relates to the technical field of transducer, it provides an ultrasonic transducer and the manufacture method therefore. The ultrasonic...
US-1,013,4972 Qubit and coupler circuit structures and coupling techniques
A cryogenic quantum bit package with multiple qubit circuits facilitates inter-qubit signal propagation using a multi-chip module (MCM). Multiple qubits are...
US-1,013,4971 Thermoelectric converter
A thermoelectric converter includes a first substrate that is deformable, a second substrate that is deformable, a plurality of thermoelectric conversion...
US-1,013,4970 Compound semiconductor and application thereof
In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A...
US-1,013,4969 Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated...
Solid-state transducers ("SSTs") and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular...
US-1,013,4968 Solid state lighting devices with improved contacts and associated methods of manufacturing
Solid state lighting ("SSL") devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device...
US-1,013,4967 Light emitting device
A light-emitting device includes first and second lead frames spaced apart from each other, the first and second lead frames each including a top surface, an...
US-1,013,4966 Light emitting device
A light emitting device includes a first substrate including a flexible first base member and a first wiring pattern provided on the first base member; a second...
US-1,013,4965 Passivation for a semiconductor light emitting device
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an...
US-1,013,4964 Passivation for a semiconductor light emitting device
In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an...
US-1,013,4963 Package structure of an ultraviolet light emitting diode
A package structure of an ultraviolet light emitting diode is provided, which includes a substrate, a transparent body, at least one ultraviolet light emitting...
US-1,013,4962 Quantum dot LED package structure
Provided is a quantum dot LED package structure comprising a bottom bracket, an external bracket, a quantum dot layer light emitting chip, an inorganic barrier...
US-1,013,4961 Submount based surface mount device (SMD) light emitter components and methods
Submount based surface mount design (SMD) light emitter components and related methods are disclosed. In one aspect, a method of providing a submount based...
US-1,013,4960 Semiconductor layering sequence for generating visible light and light emitting diode
In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor...
US-1,013,4959 Light emitting device excellent in color rendering property for emitting light closer to sunlight
A light emitting device includes a first phosphor emitting a fluorescence having a peak emission wavelength of not less than 445 nm and not more than 490 nm, a...
US-1,013,4958 Phosphor layer, wavelength converter, projector, and lighting device
A phosphor layer contains phosphor particles, and satisfies the following relations: y.gtoreq.0.0623x.sup.2+0.2107x+28.789 and ...
US-1,013,4957 Surface-mountable optoelectronic semiconductor component with conductive connection on housing body
A surface-mountable optoelectronic semiconductor component is specified. The surface-mountable optoelectronic semiconductor component includes an optoelectronic...
US-1,013,4956 Light emitting diode and manufacturing method thereof
A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first...
US-1,013,4955 Light emitting element and method of manufacturing the same
A light emitting element includes a semiconductor stacked body, an oxide film, and a reflecting film. The semiconductor stacked body has a body surface. The...
US-1,013,4954 Light emitting element having protective layer
A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light...
US-1,013,4953 Light-emitting device package including lead frame and using lead terminal as a reflective cavity
A light emitting device package is provided. The light emitting device package includes a package body comprising a first cavity, and a second cavity connected...
US-1,013,4952 Manufacturing method of light emitting device
The invention relates to a light emitting device, a manufacturing method thereof and a display device. The light emitting device comprises: a substrate, and a...
US-1,013,4951 Light emitting device method of manufacture
A method of manufacturing a light emitting device includes preparing a wafer having a sapphire substrate with semiconductor structures, forming a plurality of...
US-1,013,4950 Micro light emitting diode and manufacturing method thereof
A .mu.LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped...
US-1,013,4949 Semiconductor light emitting device
A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer...
US-1,013,4948 Light emitting diode with polarization control
An improved light emitting heterostructure is provided. The heterostructure includes an active region having a set of barrier layers and a set of quantum wells,...
US-1,013,4947 Light emitting device and method of fabricating the same
A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom...
US-1,013,4946 Manufacturing method of light-emitting device
A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed...
US-1,013,4945 Wafer to wafer bonding techniques for III-V wafers and CMOS wafers
A method for wafer to wafer bonding for III-V and CMOS wafers is provided. A silicon carrier wafer is provided having an epitaxial III-V semiconductor region...
US-1,013,4944 Light-emitting element and method for producing the same
A light-emitting element includes: a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of...
US-1,013,4943 Semiconductor chip, method for producing a plurality of semiconductor chips and method for producing an...
A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: --providing a wafer (1) comprising a multiplicity...
US-1,013,4942 Doping media for the local doping of silicon wafers
The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar...
US-1,013,4941 Method for manufacturing solar cell including a patterned dopant layer
A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one...
US-1,013,4940 Method of manufacturing solar cell
A method of manufacturing a solar cell includes: forming a solar cell substrate having one main surface and the other main surface and having a p-type surface...
US-1,013,4939 Optical sensor module and a wearable device including the same
An optical sensor module has a light receiver and a light-emitter which is surrounded by a light blocking wall, wherein the light receiver is disposed on a main...
US-1,013,4938 Lateral avalanche photodetector
A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric...
US-1,013,4937 Semiconductor photodiode
A semiconductor photodiode, including a light-absorbing layer; an optical waveguide via which light can evanescently be coupled into the light-absorbing layer,...
US-1,013,4936 APD focal plane arrays with backside vias
An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed...
US-1,013,4935 Photoelectric conversion apparatus and photoelectric conversion unit used in photoelectric conversion apparatus
In an embodiment, photoelectric conversion units (10) each include a package (12) accommodating a photoelectric conversion device (11). The package (12) has a...
US-1,013,4934 Method for producing concentrating solar cell module and concentrating solar cell module
A method for producing a concentrating solar cell module having the steps of: preparing a base portion having a plurality of mounting regions for mounting solar...
US-1,013,4933 System for isolating portions of a power supply array
A system for isolating portions of a power supply array comprising at least one isolation mechanism being in electrical communication with a terminal of at...
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