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Patent # Description
US-1,015,3343 Tunnel field-effect transistor and method for producing same
A method for producing a tunnel field-effect transistor (TFET) having a source region, a channel region, and a drain region includes arranging an epitaxial...
US-1,015,3342 Semiconductor device
A semiconductor device includes a substrate; an active layer disposed over the substrate and having a source region and a drain region; a contact region...
US-1,015,3341 Method of forming internal spacer for nanowires
A method of forming a semiconductor device comprising horizontal nanowires is described. An example method involves providing a semiconductor structure...
US-1,015,3340 Stacked nanowire semiconductor device
A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second...
US-1,015,3339 Semiconductor device and method for forming a semiconductor device
A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a...
US-1,015,3338 Method of manufacturing a capacitor
A method of forming a device includes forming a through via extending into a substrate. The method further includes forming a first insulating layer over the...
US-1,015,3337 Flexible display device and method for manufacturing the same
A flexible display device comprises a substrate having a flat portion and a curved portion, wherein a pixel array is provided in the flat portion and a pad...
US-1,015,3336 Semiconductor device and a display device including the same
A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a...
US-1,015,3335 Manufacturing method of transistor on color filter type organic light emitting display and transistor on color...
Provided are a manufacturing method of a transistor on color filter type organic light emitting display and a transistor on color filter type organic light...
US-1,015,3334 Display apparatus and method of manufacturing the same
A display apparatus includes a substrate having a plurality of pixel areas, and a pixel circuit including a storage capacitor and a plurality of thin film...
US-1,015,3333 Method for manufacturing an OLED backplate and method for manufacturing an OLED panel
A method for manufacturing an OLED backplate and a method for manufacturing an OLED panel are provided. In the method for manufacturing the OLED backplate of...
US-1,015,3332 Display device
To provide a display device with low power consumption. The display device includes a plurality of pixels each having a light-emitting element having a...
US-1,015,3331 Display device
A display device may include: a display area; a peripheral area disposed outside the display area and in which at least a part of a black matrix is disposed;...
US-1,015,3330 Electro-optical device and electronic apparatus having an evaluation pattern
An organic EL device includes a substrate; an organic EL element that is disposed on the substrate; a sealing part that is formed to cover the organic EL...
US-1,015,3329 Method of manufacturing display panel
The present disclosure discloses a method of manufacturing a display panel. The method includes: providing a first substrate, and forming a release layer on the...
US-1,015,3328 OLED display panle and a package method
The present invention is to provide an Organic Light-Emitting Diode (OLED) display panel and a package method thereof. The method includes forming...
US-1,015,3326 Memory device
According to one embodiment, a memory device includes a first conductive layer, a second conductive layer, a first insulating layer and a first layer. The first...
US-1,015,3325 Maskless parallel pick-and-place transfer of micro-devices
A method of surface mounting micro-devices includes adhering a first plurality of micro-devices on a donor substrate to a transfer surface with an adhesive...
US-1,015,3324 Low-voltage charge-coupled devices with a heterostructure charge-storage well
A CCD with an internal heterostructure well to store the photogenerated carriers is realized by using barrier and absorber semiconductors with a type-II band...
US-1,015,3323 Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing...
A production method for a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a...
US-1,015,3322 Organic light emitting display device
An organic light emitting display device includes a substrate in which an active area and a bending area are defined, a thin film transistor on the substrate in...
US-1,015,3321 Radiation detector core assembly and method for constructing the same
The present invention is directed towards a moisture resistant radiation detector core assembly which was constructed by first assembling the photon-electron...
US-1,015,3320 Semiconductor device and method of forming the same
A semiconductor device includes: a visible light sensing layer, having a first surface and a second surface opposite to the first surface; an infrared ray...
US-1,015,3319 CMOS image sensor with dual damascene grid design having absorption enhancement structure
The present disclosure, in some embodiments, relates to a method of forming an image sensor integrated chip. The method may be performed by forming an image...
US-1,015,3318 Image sensor device with first and second source followers and related methods
An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing...
US-1,015,3317 Image sensors comprising a chamber to confine a sample at a sensor surface of successive light sensitive...
Among other things, an integral image sensor includes a sensor surface having a surface area at which light-sensitive pixels are arranged in rows and columns....
US-1,015,3316 Mechanisms for forming image sensor device with deep-trench isolation structure
An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate....
US-1,015,3315 Photosensitive imaging apparatus and method of forming same
A photosensitive imaging apparatus and a method of forming such an apparatus are disclosed. The apparatus includes: a first semiconductor substrate, including a...
US-1,015,3314 Semiconductor apparatus, solid-state image pickup device, image pickup apparatus, and electronic apparatus
The present technology relates to a semiconductor apparatus, a solid-state image pickup device, an image pickup apparatus, and an electronic apparatus capable...
US-1,015,3313 Unit pixel for image sensor comprising contact pad connected to light receiving portion
A unit pixel formed on a substrate and configured to convert incident light to an electrical signal to constitute an image sensor provided. A unit pixel...
US-1,015,3312 Back-side illuminated pixel
A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer...
US-1,015,3311 Image sensor
An image sensor includes: a pixel chip provided with a plurality of pixels, a plurality of first transfer lines, and a plurality of capacitors; a circuit chip...
US-1,015,3310 Stacked-chip backside-illuminated SPAD sensor with high fill-factor
A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the...
US-1,015,3309 Manufacturing method of display panel
A manufacturing method of a display panel disclosed by the invention includes: providing a substrate, the substrate having a first metal layer disposed thereon,...
US-1,015,3308 Manufacturing method for thin film transistor and array substrate
The present disclosure provides a method for manufacturing a thin film transistor comprising: forming a buffer layer, an oxide semiconductor layer, a gate...
US-1,015,3307 Semiconductor device with reduced electrostatic discharge (ESD) in a manufacturing process
A semiconductor device is provided in which ESD is less likely to occur in a manufacturing process thereof. In manufacture of a semiconductor device including a...
US-1,015,3306 Transistor layout with low aspect ratio
A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first...
US-1,015,3305 Array substrate, manufacturing method thereof, and display device
The present invention provides an array substrate, a manufacturing method thereof and a display device, relates to the field of display technology. The array...
US-1,015,3304 Thin film transistors, arrays substrates, and manufacturing methods
The present disclosure relates to a TFT includes an active layer formed on a substrate, wherein the active layer includes a first semiconductor layer and a...
US-1,015,3303 Display device and electronic device
A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more,...
US-1,015,3302 Pixel structure
A method for manufacturing a pixel structure is provided. A patterned semiconductor material layer, an insulation material layer, and a gate electrode material...
US-1,015,3301 Logic circuit, processing unit, electronic component, and electronic device
A retention circuit provided in a logic circuit enables power gating. The retention circuit includes a first terminal, a node, a capacitor, and first to third...
US-1,015,3300 Semiconductor device including a high-electron-mobility transistor (HEMT) and method for manufacturing the same
A semiconductor device comprises a substrate and a high-electron-mobility transistor (HEMT). The substrate is formed with a recess. At least a portion of the...
US-1,015,3299 Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical...
A vertical ferroelectric field effect transistor construction comprises an isolating core. A transition metal dichalcogenide material encircles the isolating...
US-1,015,3298 Integrated structures and methods of forming vertically-stacked memory cells
Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, vertically-stacked memory cells within...
US-1,015,3297 Electronic device and method for fabricating the same
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate; and a stepped structure including first...
US-1,015,3296 Memory device and method for manufacturing same
A memory device includes a substrate and a stacked body arranged along a first direction. The stacked body includes electrode films. A configuration of an end...
US-1,015,3295 Nonvolatile memory devices and methods of forming same
A vertical NAND-type memory device includes a vertical stack of inter-gate insulating layers and gate electrodes arranged in an alternating sequence on an...
US-1,015,3294 Method of ONO stack formation
A method of controlling the thickness of gate oxides in an integrated CMOS process which includes performing a two-step gate oxidation process to concurrently...
US-1,015,3293 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device having a nonvolatile memory cell arranged in a p-type well (active region) PW1 in a memory cell region 1A in a semiconductor substrate 1...
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