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Patent # Description
US-1,015,3292 Vertical memory devices having dummy channel regions
A memory device includes a plurality of channel regions that each extend in a direction perpendicular to an upper surface of a substrate, a plurality of gate...
US-1,015,3291 Lateral non-volatile storage cell
A method fabricates a lateral non-volatile storage cell. The lateral non-volatile storage cell includes a first transistor including a first transistor body...
US-1,015,3290 Structure and method for single gate non-volatile memory device
The present disclosure provides an integrated circuit. The integrated circuit includes a substrate; a field effect transistor disposed in a periphery region of...
US-1,015,3289 Non-volatile memory and fabricating method thereof
A non-volatile memory including a substrate, a charge storage structure, two metal gate structures, a first dielectric layer, a second dielectric layer, a first...
US-1,015,3288 Double metal layout for memory cells of a non-volatile memory
A non-volatile memory having a double metal layout is provided that includes a first fuse fabricated on a first conductive layer of the integrated circuit, a...
US-1,015,3287 Layout pattern for static random access memory
A layout pattern of a static random access memory (SRAM) includes a substrate, a first pull-up transistor (PL1), a first pull-down transistor (PD1), a second...
US-1,015,3286 SRAM cells with vertical gate-all-round MOSFETs
A Static Random Access Memory (SRAM) cell includes a first and a second pull-up transistor, a first and a second pull-down transistor forming cross-latched...
US-1,015,3285 Formation method of semiconductor device with embedded capacitor
A method for forming a semiconductor device is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a contact...
US-1,015,3284 Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the...
A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a...
US-1,015,3283 Semiconductor devices including conductive contacts and insulation patterns arranged in an alternating sequence...
Semiconductor devices and method of manufacturing the same are provided. The devices may include a substrate including a first impurity region and second...
US-1,015,3282 Ultra-high vacuum transport and storage
An apparatus for transporting or storing at least one semiconductor wafer in an ultra-high vacuum is provided. A portable vacuum transfer pod is provided...
US-1,015,3281 Memory cells and memory arrays
Some embodiments include a memory cell having first and second transistors and first and second capacitors. The first capacitor is vertically displaced relative...
US-1,015,3280 Replacement gate process for FinFET
A method of forming a semiconductor device includes etching a substrate to form two first trenches separated by a fin; filling the two first trenches with an...
US-1,015,3279 Compact and reliable changeable negative voltage transmission circuit
A compact and reliable changeable negative voltage transmission circuit is described. It is very useful for applications need passing changeable negative...
US-1,015,3278 Fin-type field effect transistor structure and manufacturing method thereof
A fin-type field effect transistor comprising a substrate, at least one gate stack, spacers and epitaxy material portions is described. The substrate has fins...
US-1,015,3277 Integrated circuit device and method of fabricating the same
An integrated circuit device includes: a pair of width-setting patterns over a substrate, the pair of width-setting patterns defining a width of a gate...
US-1,015,3276 Group III heterojunction semiconductor device having silicon carbide-containing lateral diode
In an embodiment, a semiconductor device includes a silicon carbide layer comprising a lateral diode, and a Group III nitride based semiconductor device...
US-1,015,3275 Method of operating an IGBT having switchable and non-switchable diode cells
A method of operating an IGBT is described. The IGBT has gate, emitter and collector terminals, and IGBT cells, switchable diode cells, and non-switchable diode...
US-1,015,3274 Semiconductor device
A p-type well is formed in a semiconductor substrate, and an n.sup.+-type semiconductor region and a p.sup.+-type semiconductor region are formed in the p-type...
US-1,015,3273 Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor...
A semiconductor device is provided that comprises a base structure, a first channel layer overlying the base structure, a second channel layer overlying the...
US-1,015,3272 Semiconductor integrated circuit
A first power line configured to receive a first voltage, a second power line configured to receive a second voltage which is lower than the first voltage, a...
US-1,015,3271 ESD protection device and method
An ESD protection device includes a substrate structure having a substrate, first and second fins, and first and second doped regions having different...
US-1,015,3270 Electrostatic discharge protection devices
An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second...
US-1,015,3269 Low dynamic resistance low capacitance diodes
A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5...
US-1,015,3268 Organic surface treatments for display glasses to reduce ESD
Glass substrates comprising an A-side upon which silicon thin film transistor devices can be fabricated and a B-side having a substantially homogeneous organic...
US-1,015,3267 ESD-protective-function-equipped composite electronic component
An ESD-protective-function-equipped composite electronic component is provided that includes multiple Zener diodes formed from first and second semiconductor...
US-1,015,3266 Semiconductor device
According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at...
US-1,015,3265 Dummy cell arrangement and method of arranging dummy cells
A dummy cell arrangement in a semiconductor device includes a substrate with a dummy region, unit dummy cells arranged in rows and columns in the dummy region,...
US-1,015,3264 Static random access memory (SRAM) cell including fin-type transistor
The present disclosure allows for reducing parasitic capacitance of a bit line, and a drop in access performance in an SRAM cell including fin-type transistors....
US-1,015,3263 Patterned material layer and patterning method
A structure of a patterned material layer including separate patterns arranged in rows and columns is described. The separate patterns in at least one row...
US-1,015,3262 Semiconductor device and manufacturing method thereof
According to an embodiment, a semiconductor device includes: a stacked body in which insulator layers and conductor layers alternately stacked; a block...
US-1,015,3261 Cooling system for high power application specific integrated circuit with embedded high bandwidth memory
The subject disclosure relates to an integrated circuit package having an application specific integrated circuit, a high bandwidth memory, a first heat sink...
US-1,015,3260 Light-emitting diode (LED) device
A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a...
US-1,015,3258 LED package
An LED module includes: a substrate including main, rear, and bottom surfaces; a first light emitting element disposed on the main surface; a conductive layer...
US-1,015,3257 Micro-printed display
A micro-printed display includes a display substrate. An array of row conductors, an array of column conductors, and a plurality of micro-pixels are disposed on...
US-1,015,3256 Micro-transfer printable electronic component
A micro-transfer printable electronic component includes one or more electronic components, such as integrated circuits or LEDs. Each electronic component has...
US-1,015,3255 Semiconductor package having a high reliability
A semiconductor package includes a package substrate, a plurality of semiconductor devices stacked on the package substrate, a plurality of underfill fillets...
US-1,015,3254 Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing...
A stackable microelectronic package includes a first microelectronic die attached to and electrically connecting with a first substrate. A second ...
US-1,015,3253 Package-bottom through-mold via interposers for land-side configured devices for system-in-package apparatus
A system-in-package apparatus includes a package substrate configured to carry at least one semiconductive device on a die side and a through-mold via package...
US-1,015,3252 Wafer to wafer structure and method of fabricating the same
A wafer to wafer structure includes a first wafer, a second wafer. A first bonding layer and a second bonding layer are disposed between the first wafer and the...
US-1,015,3251 Apparatuses and methods for scalable memory
Apparatuses and methods are provided for scalable memory. An example apparatus comprises a logic component, a plurality of memory components adjacent to and...
US-1,015,3250 Flip-chip electronic device with carrier having heat dissipation elements free of solder mask
A solution relating to electronic devices of flip-chip type is provided, which includes at least one chip carrier having a carrier surface, the carrier(s)...
US-1,015,3249 Dual-sided integrated fan-out package
A method for forming through vias comprises the steps of forming a dielectric layer over a package and forming an RDL over the dielectric layer, wherein forming...
US-1,015,3248 Semiconductor device and method of forming insulating layers around semiconductor die
A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the...
US-1,015,3247 Methods of forming wire interconnect structures
A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool;...
US-1,015,3246 Method for producing member for semiconductor device and semiconductor device, and member for semiconductor device
There is provided a method for producing a member for semiconductor device which can reduce generation of a large number of voids in a solder-bonded portion...
US-1,015,3245 Semiconductor device
Provided is a semiconductor device which can be prevented from increasing in size. The semiconductor device includes a semiconductor chip having a first main...
US-1,015,3244 Display Device
According to an aspect, a display device includes: a substrate including a display region and a non-display region surrounding the display region; at least one...
US-1,015,3243 Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. A method of forming a device includes forming a...
US-1,015,3242 Electronic device interconnections for high temperature operability
Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The...
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