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Patent # Description
US-1,015,3191 Substrate carrier system and method for using the same
A substrate carrier system is provided. The substrate carrier system includes a substrate carrier body, an electrode assembly, a support base, and a controller....
US-1,015,3190 Devices, systems and methods for electrostatic force enhanced semiconductor bonding
Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding...
US-1,015,3189 Carrier buffering device and buffering method
Without a lateral transfer mechanism in a local vehicle, the buffering capacity of a temporary storage apparatus is increased. The temporary storage apparatus...
US-1,015,3188 Micro transfer printing method
The present invention provides a micro transfer printing method, which uses pick-up projections provided on a transfer head to suck and hold micro components...
US-1,015,3187 Methods and apparatus for transferring a substrate
Embodiments method and apparatus for transferring a substrate are provided herein. In some embodiments, a substrate cassette includes a body having an upper...
US-1,015,3186 Indicator used in electronic device manufacturing apparatus and method for designing and/or managing the apparatus
Provided is an indicator that can easily detect whether treatment with at least one member of plasma, ozone, ultraviolet rays, and radical-containing gas is...
US-1,015,3185 Substrate temperature measurement in multi-zone heater
Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate...
US-1,015,3184 Light irradiation type heat treatment apparatus
A plurality of support pins that support a semiconductor wafer are located upright on a top surface of a susceptor. A condenser lens is located on a bottom...
US-1,015,3183 High speed low temperature method for manufacturing and repairing semiconductor processing equipment and...
A method for the joining of ceramic pieces into an assembly adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the...
US-1,015,3182 Substrate processing apparatus
A substrate processing apparatus that performs processing by immersing a substrate into a processing liquid obtained by mixing phosphoric acid with a diluent...
US-1,015,3181 Substrate treating apparatus and substrate treating method
Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in...
US-1,015,3180 Semiconductor bonding structures and methods
A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once...
US-1,015,3179 Carrier warpage control for three dimensional integrated circuit (3DIC) stacking
An embodiment method of forming a package-on-package (PoP) device includes temporarily mounting a substrate on a carrier, stacking a first die on the substrate,...
US-1,015,3178 Semiconductor die assemblies with heat sink and associated systems and methods
Semiconductor die assemblies with heat sinks are disclosed herein. In one embodiment, a semiconductor die assembly includes a stack of semiconductor dies and a...
US-1,015,3177 Wiring substrate and semiconductor device
A wiring component electrically connects a first semiconductor element, including first and second electrode terminals, and a second semiconductor element,...
US-1,015,3176 Manufacturing method of semiconductor device and template for nanoimprint
According to one embodiment, there is provided a manufacturing method of a semiconductor device. The method includes forming a film to be processed on a...
US-1,015,3175 Metal oxide layered structure and methods of forming the same
Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a...
US-1,015,3174 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device according to an embodiment includes forming a first interlayer film on a first layer, the first interlayer film...
US-1,015,3173 Method for wet etching of block copolymer self-assembly pattern
The present invention relates to a process for selectively removing a block on one side using a wet etching process in connection with self-assembly block...
US-1,015,3172 Etching method and recording medium
A method of etching a silicon oxide film on a substrate, includes generating reaction products containing moisture by modifying the silicon oxide film by...
US-1,015,3171 Method of forming patterns, patterns formed according to the method, and semiconductor device including the...
A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an...
US-1,015,3170 Method of fabricating semiconductor device
A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and...
US-1,015,3169 Method of controlling threshold of transistor and method of manufacturing semiconductor device
In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on...
US-1,015,3168 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes: forming a light absorbing layer on a front surface of a semiconductor substrate or in the...
US-1,015,3167 Semiconductor devices with cavities
A semiconductor device comprises a first semiconductor wafer including a cavity formed in the first semiconductor die. A second semiconductor die is bonded to...
US-1,015,3166 Mechanisms for forming patterns using lithography processes
The present disclosure provides a method for forming patterns in a semiconductor device. In accordance with some embodiments, the method includes providing a...
US-1,015,3164 Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes forming a mask layer including a) one metal from tungsten, tantalum, zirconium, hafnium, molybdenum,...
US-1,015,3163 Hardmask composition and method of forming patterning by using the hardmask composition
Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask...
US-1,015,3162 Shrink process aware assist features
Methods for fabricating integrated circuits are provided. In one example, a method includes providing a circuit structure layer over a substrate and at least...
US-1,015,3161 Method for manufacturing a semiconductor structure
A method for manufacturing a semiconductor structure includes forming a target layer, a lower hard mask layer, a middle hard mask layer, and an upper hard mask...
US-1,015,3160 Method of manufacturing semiconductor device
In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a...
US-1,015,3159 Source and drain formation using self-aligned processes
An approach to deposit, by a self-aligning process, a layer of graphene on a gate formed on a dielectric layer on a semiconductor substrate where the gate...
US-1,015,3158 Semiconductor nanowire fabrication
Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an...
US-1,015,3157 P-FET with graded silicon-germanium channel
A method of forming a semiconductor structure includes forming a silicon-germanium layer on a semiconductor region of a substrate having a specific...
US-1,015,3156 Plasma enhanced atomic layer deposition
According to one example, a process includes performing a first plurality of layer deposition cycles of a deposition process on a substrate, and after...
US-1,015,3155 Doped ferroelectric hafnium oxide film devices
Techniques for forming an electronic device having a ferroelectric film are described. The electronic device comprises a ferroelectric material having one or...
US-1,015,3154 Process of preparing low dielectric constant thin film layer used in integrated circuit
Preparing a low dielectric constant thin film layer used in an integrated circuit includes: extracting gas out of a furnace; when the vacuum level within the...
US-1,015,3153 Method for removing adhering matter and dry etching method
An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an...
US-1,015,3152 High-pressure sodium lamp lighting device
The present technology provides a high-pressure sodium lamp lighting device that reduces occurrence of the acoustic resonance phenomenon. A high-pressure sodium...
US-1,015,3151 Phosphor-containing film and backlight unit
Provided are a phosphor-containing capable of suppressing deterioration of phosphors and can be manufactured with high efficiency and a backlight unit....
US-1,015,3150 Apparatus for mass analysis of analytes by simultaneous positive and negative ionization
Among other things, we describe methods and apparatus for the ionization of target molecular analytes of interest, e.g., for use in mass spectrometry. In some...
US-1,015,3149 Ion trap mass spectrometer
An apparatus 41 and operation method are provided for an electrostatic trap mass spectrometer with measuring frequency of multiple isochronous ionic...
US-1,015,3148 Ion trap mass spectrometer
An apparatus 41 and operation method are provided for an electrostatic trap mass spectrometer with measuring frequency of multiple isochronous ionic...
US-1,015,3147 Method of compressing an ion beam
A method of mass or ion mobility spectrometry is disclosed comprising: releasing ions from an ion trapping volume into an ion separation region; separating the...
US-1,015,3146 High mass accuracy filtering for improved spectral matching of high-resolution gas chromatography-mass...
The invention provides methods, systems and algorithms for identifying high-resolution mass spectra. In some embodiments, an analyte is ionized and analyzed...
US-1,015,3145 Method of mass spectrometry and a mass spectrometer
The present invention relates to a method of mass spectrometry, an apparatus adapted to perform the method and a mass spectrometer. More particularly, but not...
US-1,015,3144 Imaging spectrometer
A extreme ultraviolet (EUV) imaging spectrometer includes: a radiation source to: produce EUV radiation; subject a sample to the EUV radiation; photoionize a...
US-1,015,3143 Smart chamber and smart chamber components
A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly,...
US-1,015,3142 LiCoO.sub.2 sputtering target, production method therefor, and positive electrode material thin film
A sputtering target having a composition of LiCoO.sub.2, wherein a resistivity of the target is 100 .OMEGA.cm or less, and a relative density is 80% or higher....
US-1,015,3141 Apparatus for monitoring gas and plasma process equipment including the same
Provided is an apparatus for monitoring a gas and plasma process equipment including the same. The apparatus includes: a housing including a gas inflow hole, a...
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