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Patent # Description
US-1,026,3033 Solid state image pickup device and method of producing solid state image pickup device
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during...
US-1,026,3032 Photodiode with different electric potential regions for image sensors
An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher...
US-1,026,3031 Feedback capacitor and method for readout of hybrid bonded image sensors
A hybrid-bonded image sensor has a photodiode die with multiple macrocells; each macrocell has at least one photodiode and a coupling region. The coupling...
US-1,026,3030 Die stacked image sensors and related methods
Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a...
US-1,026,3029 Photoelectric conversion device and manufacturing method of the photoelectric conversion device
A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS...
US-1,026,3028 Solid-state image pickup apparatus and method of manufacturing the same
Provided are a solid-state image pickup apparatus which includes: a semiconductor substrate having a plurality of photoelectric converters; a first and a second...
US-1,026,3027 Solid-state imaging device and imaging apparatus
A solid-state imaging device includes a plurality of pixels, wherein one or more of the plurality of pixels have a pupil dividing portion and a light receiving...
US-1,026,3025 Solid-state imaging sensor
The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A...
US-1,026,3024 Imaging element, electronic device, and manufacturing method
The present technology relates to an imaging element, an electronic device, and a manufacturing method that make it possible to prevent color mixing in a pixel...
US-1,026,3023 Device, electronic apparatus, and transport apparatus
A color filter layer and a light transmissive layer have a groove between a first color filter and a second color filter and between a first light transmissive...
US-1,026,3022 RGBZ pixel unit cell with first and second Z transfer gates
An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The...
US-1,026,3021 Global shutter pixels having shared isolated storage capacitors within an isolation structure surrounding the...
Disclosed herein is an electronic device including an integrated circuit substrate, with a pixel array area within the integrated circuit substrate. A first...
US-1,026,3020 Planar nano-oscillator array having phase locking function
Provided is a planar nano-oscillator array having phase locking function, including two or more planar nano-oscillators which are arranged in parallel. The two...
US-1,026,3019 Flexible panel and method for manufacturing the same
A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an...
US-1,026,3018 Signal line structure, array substrate, and display device
Embodiments of the disclosure relate to a signal line structure, an array substrate, and a display device, where the signal line structure includes a plurality...
US-1,026,3017 Pixel structure, display panel and manufacturing method of pixel structure
A pixel structure, a display panel and a manufacturing method of the pixel structure are disclosed. The pixel structure includes: gate lines extending in...
US-1,026,3016 Active matrix substrate and method for producing the same
An active matrix substrate includes a first TFT (10), a second TFT (20) disposed per pixel, and a circuit including the first TFT. The first and second TFTs...
US-1,026,3015 Semiconductor device
A semiconductor device includes a first electrode, a first insulating layer on the first electrode, a second electrode on the first insulating layer, a second...
US-1,026,3014 Fin-type field-effect transistor
This invention relates to a fin field-effect transistor semiconductor structure. The method of forming the semiconductor structure can include patterning a...
US-1,026,3013 Method of forming an integrated circuit (IC) with hallow trench isolation (STI) regions and the resulting IC...
Disclosed is an integrated circuit (IC) formation method, wherein trenches are formed within a semiconductor layer to define semiconductor mesa(s). Instead of...
US-1,026,3012 Semiconductor integrated circuit device comprising MISFETs in SOI and bulk substrate regions
The semiconductor integrated circuit device has a hybrid substrate structure which includes both of an SOI structure and a bulk structure on the side of the...
US-1,026,3011 Process for making ICs from standard logic cells that utilize TS cut mask(s) and avoid DFM problems caused by...
An improved standard cell chip, library and/or process ensures that there is adequate spacing between TSCUT jogs and nearby gate contacts to avoid inadvertent...
US-1,026,3010 Semiconductor device and manufacturing method thereof
A semiconductor device includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer and disposed on the...
US-1,026,3009 Semiconductor devices with vertical channel structures
Semiconductor devices are provided. The semiconductor devices may include a substrate, a ground selection gate electrode, and a channel structure. The channel...
US-1,026,3008 Semiconductor memory device and method of manufacturing the same
According to an embodiment, a semiconductor memory device comprises a plurality of control gate electrodes, a semiconductor layer, and a first insulating layer....
US-1,026,3006 Semiconductor memory devices
A semiconductor memory device may include: a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately...
US-1,026,3005 Method of manufacturing a semiconductor device
A control gate electrode and a memory gate electrode of a memory cell of a non-volatile memory are formed in a memory cell region of a semiconductor substrate,...
US-1,026,3004 Semiconductor device and method of manufacturing
The present disclosure relates to a method of forming sidewall spacers configured to improve dielectric fill between adjacent gate structures. In some...
US-1,026,3003 Semiconductor device and method of manufacturing the same
Provided is a semiconductor device which has a non-volatile memory including: a semiconductor substrate; a tunnel insulating film formed on a surface of the...
US-1,026,3002 Anti-fuse memory and semiconductor storage device
In an anti-fuse memory includes a rectifier element of a semiconductor junction structure in which a voltage applied from a memory gate electrode to a word line...
US-1,026,3001 Method of forming semiconductor memory device
A method of forming semiconductor memory device including following steps. Firstly, a substrate having a memory cell region and a peripheral region is provided,...
US-1,026,3000 Device comprising capacitor and forming method thereof
A device including a capacitor includes an isolation structure, a first control gate, a first selective gate and a first dielectric layer. The isolation...
US-1,026,2999 High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type...
An electrical device that includes at least one n-type field effect transistor including a channel region in a type III-V semiconductor device, and at least one...
US-1,026,2998 Semiconductor device and method of manufacturing the same
A semiconductor device includes a substrate including a first active area extending in a first direction and a second active area extending in a second...
US-1,026,2997 High-voltage LDMOSFET devices having polysilicon trench-type guard rings
A high-voltage semiconductor device including a semiconductor layer formed on a substrate is provided. A first well region having a first conductivity type and...
US-1,026,2996 Third type of metal gate stack for CMOS devices
A third type of metal gate stack is provided above an isolation structure and between a replacement metal gate n-type field effect transistor and a replacement...
US-1,026,2994 FinFET LDMOS devices with additional dynamic control
A FinFET semiconductor device having semiconductor body including a source region of a first type, and a drain region of a second type, and a drain-region...
US-1,026,2993 Semiconductor devices and a method for forming a semiconductor device
A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a...
US-1,026,2992 Three dimensional LVDMOS transistor structures
A semiconductor device having a first stack and a second stack of device components. The first stack has a transistor switching element having a channel, a...
US-1,026,2991 Distributed decoupling capacitor
The electrical device includes a plurality of fin structures, the plurality of fin structures including at least one decoupling fin and at least one...
US-1,026,2990 Electrostatic discharge protection device for differential signal devices
A robust electrostatic (ESD) protection device is provided. In one example, the ESD protection device is configured to accommodate three nodes. When used with a...
US-1,026,2989 ESD protection for 2.5D/3D integrated circuit systems
An integrated circuit structure includes first and second integrated circuit devices disposed on a interposer. Each integrated circuit device has electrostatic...
US-1,026,2988 Electrostatic discharge protection device
An electrostatic discharge protection device and a method of making the same. The device includes a device area located on a semiconductor substrate. The device...
US-1,026,2987 Electrostatic discharge protection circuit
The present invention provides an ESD protection circuit electrically connected between a high voltage power line and a low voltage power line, and the ESD...
US-1,026,2986 Protection device and method for fabricating the protection device
A protection device as provided includes a doped well with a first-type impurity, formed in a substrate. A first semiconductor terminal with a second-type...
US-1,026,2985 Circuits and methods for lowering leakage in ultra-low-power MOS integrated circuits
A block of logic gates has MOS transistors whose body terminals are connected with a body voltage rail and whose source terminals are connected with a logic...
US-1,026,2984 Optical integrated circuit systems, devices, and methods of fabrication
An optical integrated circuit device includes an electrically insulating substrate, an optical connection disposed at a boundary of the optical integrated...
US-1,026,2983 Integrated photo detector, method of making the same
An integrated photo detector with enhanced electrostatic discharge damage (ESD) protection. The integrated photo detector includes a first photodiode formed in...
US-1,026,2982 Integrated circuits with standard cell
The present invention provides an integrated circuit with a standard cell of an inverter. The integrated circuit includes: a first metal line and a second metal...
US-1,026,2981 Integrated circuit, system for and method of forming an integrated circuit
A method of forming an integrated circuit is disclosed. The method includes generating, by a processor, a layout design of the integrated circuit, outputting...
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