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Patent # Description
US-1,028,3688 Light emitting device
A light emitting device includes a mounting board, a first light emitting element and a second light emitting element. The mounting board includes an insulator...
US-1,028,3687 Light emitting diode
A light emitting diode is disclosed. The light emitting diode includes: a plurality of light emitting cells including a first light emitting cell and a second...
US-1,028,3686 Optoelectronic semiconductor component, optoelectronic arrangement and method of producing an optoelectronic...
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic...
US-1,028,3685 Light emitting device and method of fabricating the same
Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first...
US-1,028,3684 Light emitting device and manufacturing method thereof
A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite...
US-1,028,3683 Filament structure and LED light bulb having the same
An LED filament contains: a light transmissive substrate, at least one LED chip, a first electrode pin, a second electrode pin, a light emitting layer, and a...
US-1,028,3682 LED package structure and LED light-emitting device
The present disclosure provides a LED package structure and a LED light-emitting device. The LED package structure comprises a LED chip and a wavelength...
US-1,028,3681 Phosphor-converted light emitting device
A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising...
US-1,028,3680 Method for the production of an electronic module having an electronic component embedded therein
An electronic module and method for the production of the electronic module in accordance with some embodiments of the invention are disclosed. The electronic...
US-1,028,3679 Light emitting device and light source module
A light emitting device, has: a light emitting element; a substrate having a first main surface on which the light emitting element is mounted, and recesses on...
US-1,028,3678 Light-emitting-device package and production method therefor
A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first...
US-1,028,3677 LED structure and fabrication method
A light-emitting diode (LED) structure includes a substrate; a first semiconductor layer on the substrate; a light emitting layer on the first semiconductor...
US-1,028,3676 Light-emitting diode chip with one of a mirror layer and an adhesion-promoting layer for high efficiency and...
A light-emitting diode chip includes a semiconductor layer sequence based on InGaAlAsP and generates visible light or near-infrared radiation, a current...
US-1,028,3675 Vertical light emitting diode having electrode configuration and light emitting diode package having the same
A light emitting diode including a semiconductor stack including a lower semiconductor layer, an active layer, and an upper semiconductor layer; an upper...
US-1,028,3674 Graphene-based solid state devices capable of emitting electromagnetic radiation and improvements thereof
Described herein are solid-state devices based on graphene in a Field Effect Transistor (FET) structure that emits high frequency Electromagnetic (EM) radiation...
US-1,028,3673 Light emitting device, light emitting device package and illumination system
A light emitting device is provided. The light emitting device includes a first semiconductor layer, an active layer including a plurality of well layers and a...
US-1,028,3672 Quantum dot light-emitting device
A quantum dot light-emitting device includes: a first electrode; a second electrode opposite to the first electrode; an emission layer between the first...
US-1,028,3671 Method of producing III nitride semiconductor light-emitting device
Provided is a method of producing a III nitride semiconductor light-emitting device having an n-type semiconductor layer, a light emitting layer, a barrier...
US-1,028,3670 Method for manufacturing light emitting device
A soluble member is provided on a light emitting surface of a light emitting element. The soluble member is soluble in a solvent. The soluble member has a first...
US-1,028,3669 Semiconductor light emitting device and method of fabricating the same
A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a...
US-1,028,3668 Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same
A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The...
US-1,028,3667 Surface plasma wave coupled detectors
The present disclosure relates to an electromagnetic energy detector. The detector can include a substrate having a first refractive index; a metal layer; an...
US-1,028,3666 Manufacturing semiconductor-based multi-junction photovoltaic devices
Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent...
US-1,028,3665 Compensated photonic device structure and fabrication method thereof
Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a...
US-1,028,3664 Avalanche diode including vertical PN junction
An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN...
US-1,028,3663 Heterostructure germanium tandem junction solar cell
A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of...
US-1,028,3662 Parallel interconnection of neighboring solar cells with dual common back planes
A solar assembly or module comprising a plurality of solar cells and a support, the support comprising a conductive layer or back plane on each planar side....
US-1,028,3661 Photovoltaic module assembly
A photovoltaic module assembly, comprising: a first layer; a back layer, wherein the back layer comprises a second layer, a third layer, and a support layer...
US-1,028,3660 Photovoltaic devices comprising an anti-reflective layer containing dispersed objects having areas with...
The present invention relates to photovoltaic devices which comprise: a semiconducting material able to ensure a photovoltaic effect when it is subject to...
US-1,028,3659 Configurations for solar cells, solar panels, and solar panel systems
Embodiments of the disclosure are generally related to solar panel configurations. In some embodiments, the active surface area of the solar panel is increased...
US-1,028,3658 Interband cascade devices
Photovoltaic (PV) and photodetector (PD) devices, comprising a plurality of interband cascade (IC) stages, wherein the IC stages comprise an absorption region...
US-1,028,3657 Broadband photovoltaic sheets and method of constructing the same
The invention described herein details flexible, high-efficiency photovoltaic cells with nano-enhanced absorbers and ultra-low dark current. By extending...
US-1,028,3656 Photoelectric conversion device
A photoelectric conversion device includes a quantum dot layer formed by integrating a plurality of quantum dots on a main surface of a semiconductor substrate....
US-1,028,3655 Quantum dot apparatus and associated methods and apparatus
A method comprising: depositing a quantum dot solution onto a supporting substrate in a drop-wise manner to form one or more discrete droplets on a surface of...
US-1,028,3654 Method of manufacturing cigs-based solar cell and cigs-based solar cell
A method of manufacturing a CIGS-based solar cell including a transparent rear electrode, the method comprising forming a rear electrode layer including a...
US-1,028,3653 Solar cell with reduced absorber thickness and reduced back surface recombination
A stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar...
US-1,028,3652 Electrode stack structure capable of preventing moisture from entering photodiode
The present invention provides an electrode stack structure capable of preventing moisture from entering a photodiode, comprising: a semiconductor layer; an...
US-1,028,3651 Photodetection device and system having avalanche amplification
A photodetection device includes a semiconductor substrate; and a pixel including a first semiconductor region having signal charges as majority carriers, and...
US-1,028,3650 Silicon on insulator (SOI) transcap integration providing front and back gate capacitance tuning
Certain aspects of the present disclosure generally relate to a semiconductor variable capacitor offering at least two types of capacitance tuning, as well as...
US-1,028,3649 Schottky barrier diode and electronic apparatus
A Schottky barrier diode includes a graphene nanoribbon, a first electrode connected to one end of the graphene nanoribbon, and a second electrode connected to...
US-1,028,3648 PN junction-based electrical fuse using reverse-bias breakdown to induce an open conduction state
A fuse device is formed by a PN junction semiconducting region that is electrically insulated from other portions of an integrated circuit. The fuse device...
US-1,028,3647 Semiconductor device
According to one embodiment, a semiconductor device includes an interconnection layer, a stacked body, a plurality of separation portions, a semiconductor body,...
US-1,028,3646 Nonvolatile semiconductor memory device and method for manufacturing the same
According to one embodiment, a nonvolatile semiconductor memory device includes first and second gate electrode layers, an inter-layer insulating layer, a...
US-1,028,3644 Thin film transistor having stable threshold voltage and less parasitic capacitance, and display device using...
A thin film transistor includes a first oxide semiconductor, a source electrode, a drain electrode, a gate insulating film and a gate electrode. A second oxide...
US-1,028,3643 Display device
The purpose of the invention is suppressing a kink phenomenon and improving the image quality of a display device. The display device has a TFT in a pixel. The...
US-1,028,3642 Thin body field effect transistor including a counter-doped channel area and a method of forming the same
Manufacturing techniques and related semiconductor devices are disclosed in which the channel region of analog transistors and/or transistors operated at higher...
US-1,028,3641 Contact structures, FinFET devices and methods of forming the same
Contact structures, FinFET devices and methods of forming the same are disclosed. One of the contact structures includes a source/drain region, a mask layer, a...
US-1,028,3640 Source/drain contacts for non-planar transistors
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate...
US-1,028,3639 Semiconductor structure and method for forming the same
A semiconductor structure includes a substrate, a first fin structure disposed over the substrate, a second fin structure disposed over the substrate, and an...
US-1,028,3638 Structure and method to achieve large strain in NS without addition of stack-generated defects
A stack for a semiconductor device and a method for making the stack are disclosed. The stack comprises a plurality of sacrificial layers in which each...
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