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Patent # Description
US-1,029,0790 High thermal conductivity quantum dot light emitting diode
Provided is a high thermal conductivity quantum dot light emitting diode, comprising a bracket, an light emitting diode chip fixed on the bracket and connected...
US-1,029,0789 Light emitting device, manufacturing method for the light emitting device, and lighting module having the light...
A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an...
US-1,029,0788 Systems and methods for managing heat from an LED
Light-emitting devices and particularly light-emitting device assemblies that include light-emitting diodes (LEDs) as light sources are described. The methods...
US-1,029,0787 Metal coating method, light-emitting device, and manufacturing method for the same
A light-emitting device includes: a light-emitting element; a coating member that covers the light-emitting element; and two external connection electrodes...
US-1,029,0786 Transparent light emitting diode film
A transparent light emitting diode film is disclosed. The transparent light emitting diode film includes a base, an electrode layer positioned on the base and...
US-1,029,0785 Laminating structure of electronic device using transferring element, transferring apparatus for fabricating...
A laminating structure of an electronic device using a transferring element according to the present disclosure includes a target substrate, a bottom electrode...
US-1,029,0784 Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic...
An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part...
US-1,029,0783 LED bracket, LED device and LED display screen
An LED bracket, an LED device and an LED display screen are disclosed. The LED bracket includes a metal bracket and a cup cover wrapping the metal bracket. The...
US-1,029,0782 Method for mirror-coating lateral surfaces of optical components for use in optoelectronic semiconductor...
A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on...
US-1,029,0781 Color filter and color filter array panel
Provided is a color filter array panel. The color filter array panel according to exemplary embodiments of the present invention includes: a substrate; a color...
US-1,029,0780 Method for manufacturing light-emitting device
A method for manufacturing a light-emitting device includes: providing first and second substrates each including a plurality of packages, the packages each...
US-1,029,0779 Light emitting element
A light emitting element includes a light emitting member that is formed of at least two kinds of an oxide material and has a plate shape; and a light...
US-1,029,0778 Semiconductor device having semiconductor element bonded to base body by adhesive member
A semiconductor device in which wet-spreading of an adhesive member for bonding the semiconductor element on a base body is suppressed. The semiconductor device...
US-1,029,0776 White light emitting diode, manufacturing method and application thereof
Provided is a white light emitting diode, comprising a substrate, and a blue chip, a light emitting layer and an inorganic protective layer, which are...
US-1,029,0775 Luminescent ceramic for a light emitting device
A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer...
US-1,029,0774 Wearable display having an array of LEDs on a conformable silicon substrate
A conformable electronic device and methods for forming such devices are described. Embodiments of a conformable electronic device may include a silicon...
US-1,029,0773 Light-emitting device
A light-emitting device is disclosed and comprises: a substrate; a light-emitting stack comprising a first conductivity type semiconductor layer, an active...
US-1,029,0772 Light-emitting diode and manufacturing method therefor
A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least...
US-1,029,0771 Group III nitride semiconductor light emitting device and method for manufacture the same
Provided is a III nitride semiconductor light emitting device with improved reliability capable of maintaining light output power reliably as compared with...
US-1,029,0770 Nitride semiconductor light-emitting element
A nitride semiconductor light-emitting element having a main emission wavelength of 520 nm or more, including a sapphire substrate, and a semiconductor layer...
US-1,029,0769 Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer
A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor...
US-1,029,0768 Nanowire formation methods
Methods of forming an integrated InGaN/GaN or AlInGaP/InGaP LED on Si CMOS for RGB colors and the resulting devices are provided. Embodiments include forming...
US-1,029,0767 High efficiency visible and ultraviolet nanowire emitters
GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices....
US-1,029,0766 Light emitting device
Disclosed in an embodiment is a light emitting device comprising: a first semiconductor layer; an active layer disposed on the first semiconductor layer and...
US-1,029,0765 Solar cell and method for manufacturing the same
A solar cell and a method for manufacturing the solar cell are discussed. The method for manufacturing the solar cell includes applying an electrode paste on a...
US-1,029,0764 Process for automatic assembly of photovoltaic panels
A plant and system for the automatic horizontal assembly of photovoltaic panels with front-back-contact solar cells of crystalline silicon, of the type called...
US-1,029,0763 Roll-to-roll metallization of solar cells
Disclosed herein are approaches to fabricating solar cells, solar cell strings and solar modules using roll-to-roll foil-based metallization approaches. Methods...
US-1,029,0762 Metal oxide film formation method
Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method...
US-1,029,0761 Apparatus and method for attaching interconnector of solar cell panel
Disclosed is a method for attaching an interconnector of a solar cell panel. The method includes forming a flux layer by spraying flux over the interconnector...
US-1,029,0760 Process of manufacturing an avalanche diode
In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A...
US-1,029,0759 Back contact type perovskite photoelectric conversion element
A perovskite photoelectric conversion element includes a light transmitting substrate 11, on a front surface of which light is made incident, an oxide porous...
US-1,029,0758 Contacts for solar cells
A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal...
US-1,029,0757 Power source and method of forming same
Various embodiments of a power source and method of forming such power source are disclosed. The power source can include a substrate and a cavity disposed in a...
US-1,029,0756 Multilayer structure, device using the same, method for producing the multilayer structure, and method for...
Provided are a novel multilayer structure that can be used to protect a device and a device using the multilayer structure. The disclosed multilayer structure...
US-1,029,0755 High efficiency photovoltaic cells and manufacturing thereof
Novel structures of photovoltaic cells are provided. The cells are based on nanometer or micrometer-scaled wires, tubes, and/or rods, which are made of...
US-1,029,0754 Light harvesting antenna complexes
The invention disclosed concerns a simple ring-hub arrangement of interacting two-level systems using a theoretical quantum jump approach which mimics a...
US-1,029,0753 Mid-infrared photodetectors
Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The...
US-1,029,0752 Methods of doping semiconductor materials and metastable doped semiconductor materials produced thereby
The structures of base semiconductor materials such as Si are modified by the use of isotope transmutation alloying. A radioisotope such as Si.sup.31 is added...
US-1,029,0751 Radiation detector comprising amorphous selenium
A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the...
US-1,029,0750 Systems and methods for forming foil contact rear emitter solar cell
A solar cell structure may provide a front surface that may include a front passivation layer and front anti-reflective layer. The solar cell structure may...
US-1,029,0749 Solar cell module and solar cell
A solar cell includes: a first bus bar electrode disposed on a first end portion of the solar cell, and to which the wiring member is connected; a second bus...
US-1,029,0748 Monolithically integrated thin-film device with a solar cell, an integrated battery, and a controller
A thin-film monolithically integrated solar module with a solar cell, an integrated energy storage device, and a controller may be provided. It may comprise a...
US-1,029,0747 MIS capacitor for finned semiconductor structure
MIS capacitors are formed using a finned semiconductor structure. A highly doped region including the fins is formed within the structure and forms one plate of...
US-1,029,0745 Semiconductor device and method for manufacturing the same
A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators...
US-1,029,0744 Semiconductor device
A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an...
US-1,029,0743 Metal oxide thin-film transistor and manufacturing method for the same
The present invention relates to a metal oxide thin-film transistor and manufacturing for the same. The thin-film transistor includes a substrate; a source...
US-1,029,0742 Semiconductor device including oxide semiconductor layer
It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a...
US-1,029,0741 Thin film transistor, array substrate and display panel having the same, and fabricating method thereof
The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion...
US-1,029,0740 Semiconductor device with reduced parasitic capacitance
A semiconductor device comprising a substrate and a transistor comprising a source, drain, and gate formed on the substrate. The semiconductor device further...
US-1,029,0739 Device and method of dielectric layer
A method includes etching a semiconductor substrate to form a trench extending from a top surface of the semiconductor substrate into the semiconductor...
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