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Patent # Description
US-1,029,0738 Methods of forming epi semiconductor material on a recessed fin in the source/drain regions of a FinFET device
One illustrative method disclosed includes, among other things, forming a gate structure around a fin and above a layer of insulating material, forming a gate...
US-1,029,0737 Semiconductor arrangement with one or more semiconductor columns
A semiconductor arrangement comprises a substrate region and a first semiconductor column projecting from the substrate region. The semiconductor arrangement...
US-1,029,0736 Semiconductor device and method of forming the same
A semiconductor device and a method of forming the same are provided. A substrate is provided. A trench is formed in the substrate and a conductive material is...
US-1,029,0735 Methods of manufacturing a semiconductor device with a buried doped region and a contact structure
A method of manufacturing a semiconductor device includes: forming a doped region in a semiconductor substrate at a first distance to a main surface plane of...
US-1,029,0734 MOSFET and power conversion circuit
A MOSFET includes: a semiconductor base substrate having a super junction structure; and a gate electrode formed on a first main surface side of the...
US-1,029,0733 Semiconductor device, and method for manufacturing the same
A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a...
US-1,029,0732 High voltage semiconductor devices and methods of making the devices
A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type...
US-1,029,0731 Semiconductor device, power supply circuit, and computer
A semiconductor device of an embodiment includes a nitride semiconductor layer, a first electrode provided on the nitride semiconductor layer, a second...
US-1,029,0730 Semiconductor power device
A semiconductor power device includes an engineered aluminum-nitride substrate structure, and method of fabricating the same are described. The engineered...
US-1,029,0729 Narrow active cell IE type trench gate IGBT and a method for manufacturing a narrow active cell IE type trench...
In an equal width active cell IE type IGBT, a wide active cell IE type IGBT, and the like, an active cell region is equal in trench width to an inactive cell...
US-1,029,0728 Semiconductor device and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first doped region, a second doped...
US-1,029,0727 Semiconductor device structure for insulated gate bipolar transistor
A performance of a semiconductor device including an RC-IGBT is improved. An AlNiSi layer (a layer containing aluminum (Al), nickel (Ni), and silicon (Si)) is...
US-1,029,0726 Lateral insulated gate bipolar transistor
A lateral insulated gate bipolar transistor, comprising: a substrate (100), having a first conductivity type; an insulating layer (200), formed on the substrate...
US-1,029,0725 Bipolar junction transistor and integrated circuit device
A bipolar junction transistor includes a semiconductor substrate, a fin structure, an epitaxial emitter, an epitaxial collector and a gate. The fin structure is...
US-1,029,0724 FinFET devices having a material formed on reduced source/drain region
A semiconductor device includes a fin structure of a first semiconductor material on a substrate. The fin structure has a source region, a drain region, and a...
US-1,029,0723 Semiconductor device with metal gate
A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the...
US-1,029,0722 Memory device and method of fabricating thereof
A memory device includes a semiconductor substrate having a cell region and a peripheral region surrounding the cell region and a pair of control gate stacks on...
US-1,029,0721 Method of fabricating an electromechanical structure including at least one mechanical reinforcing pillar
The invention provides a method of fabricating an electromechanical structure presenting a first substrate including a layer of monocrystalline material covered...
US-1,029,0720 Semiconductor device and method for manufacturing the same
The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause...
US-1,029,0719 Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to...
A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material....
US-1,029,0718 Metal-oxide-semiconductor transistor and method of forming gate layout
A metal-oxide semiconductor transistor includes a substrate, a gate insulating layer disposed on a surface of the substrate, and a metal gate disposed on the...
US-1,029,0717 Thin film transistor, manufacturing method thereof, and display device including the same
The thin film transistor (TFT) contains a gate electrode metallic layer above a substrate, a gate insulator layer covering the substrate and the gate electrode...
US-1,029,0716 Semiconductor device having interfacial layer and high .kappa. dielectric layer
A semiconductor device has a semiconductor substrate. A silicon germanium layer is disposed on the semiconductor substrate. The silicon germanium layer has a...
US-1,029,0715 Semiconductor device and method for manufacturing the same
A semiconductor device can include: a substrate having a semiconductor material; a plurality of semiconductor layers of a first conductivity type, and being...
US-1,029,0714 Transistor structure with field plate for reducing area thereof
In some embodiments, a BJT structure includes a base region, an emitter region formed in the base region and including an emitter doping region, a collector...
US-1,029,0713 Field-effect transistor
A field-effect transistor having a transconductance (gm) that remains within 65% of a maximum gm value over at least 85% of a gate voltage range that...
US-1,029,0711 Semiconductor device
The present invention relates to a vertical semiconductor device such as an IGBT or a diode which includes an N buffer layer formed in the undersurface of and...
US-1,029,0710 Semiconductor device and method for forming the same
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first gradient layer, two source/drain structures, a...
US-1,029,0709 Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces
Transistor devices having indium gallium arsenide active channels, and processes for the fabrication of the same, that enables improved carrier mobility when...
US-1,029,0708 Field effect transistors and methods of forming same
Semiconductor devices and methods of forming the same are provided. A first gate electrode layer is formed over a substrate. A first gate dielectric layer is...
US-1,029,0707 Semiconductor device
A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain...
US-1,029,0706 Three-dimensional semiconductor wafer
A three-dimensional semiconductor wafer relates to a semiconductor wafer, including a raw semiconductor wafer, at least one connection layer, a conduction layer...
US-1,029,0705 Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor
Provided are a laterally diffused metal oxide semiconductor field-effect transistor and a manufacturing method therefor. The method comprises: providing a wafer...
US-1,029,0704 Semiconductor device and method for manufacturing same, power conversion device, three-phase motor system,...
An object of the present invention is to provide high-performance highly-reliable power semiconductor device. The semiconductor device according to the present...
US-1,029,0703 Power device integration on a common substrate
A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and...
US-1,029,0702 Power device on bulk substrate
A metal-oxide-semiconductor field-effect transistor (MOSFET) power device includes an active region formed on a bulk semiconductor substrate, the active region...
US-1,029,0701 MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same
A MIM capacitor includes a bottom electrode, a middle electrode disposed over the bottom electrode, a top electrode disposed over the middle electrode, a first...
US-1,029,0700 Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
A tri-layer dielectric stack is provided for a metal-insulator-metal capacitor (MIMCAP). Also, a metal-insulator-metal capacitor (MIMCAP) is provided having...
US-1,029,0699 Method for forming trench capacitor having two dielectric layers and two polysilicon layers
An integrated trench capacitor and method for making the trench capacitor is disclosed. The method includes forming a trench in a silicon layer, forming a first...
US-1,029,0698 Substrate resistor with overlying gate structure
An illustrative method includes, among other things, forming a plurality of fins. A subset of the plurality of fins is selectively removed, leaving at least a...
US-1,029,0697 Magnetic core inductor semiconductor structure and method
A method of manufacturing a semiconductor device and the semiconductor device are provided in which a plurality of layers with cobalt-zirconium-tantalum are...
US-1,029,0696 Flexible display substrate, display panel, and display device
Disclosed are a flexible display substrate, a display panel, and a display device. A traveling wire in a fixed bending area includes a plurality of sequentially...
US-1,029,0695 Display panel and fabrication method thereof
A display panel and a display panel fabrication method are provided. The display panel comprises a display region; and a peripheral circuit region surrounding...
US-1,029,0694 Organic light-emitting display panel and organic light-emitting display device
Disclosed are an organic light-emitting display panel and an organic light-emitting display device. The organic light-emitting display panel includes a display...
US-1,029,0693 Display panel and method for driving the same
Provided is a novel display panel that is highly convenient or reliable or a display panel with a high pixel aperture ratio. The display panel includes the...
US-1,029,0692 Array substrate for thin film transistor and display device of the same
A thin-film transistor array substrate and a display device are disclosed. The thin-film transistor array substrate includes a substrate, a gate electrode...
US-1,029,0691 Organic light emitting display panel and organic light emitting display device
Provided are an organic light emitting display panel and an organic light emitting display device. The organic light emitting display panel includes: an organic...
US-1,029,0690 Organic light emitting display panel with uniform luminance
Provided is an organic light emitting display panel with uniform luminance. A flattening layer including a contact hole is disposed on a substrate on which an...
US-1,029,0688 AMOLED device and manufacturing method thereof
The present invention provides an AMOLED device and a manufacturing method thereof. The manufacturing method of the AMOLED device according to the present...
US-1,029,0687 Lighting apparatus using organic light emitting diode and method of fabricating the same
A lighting apparatus using an organic light emitting diode and a method of fabricating the same according to the present disclosure is configured such that a...
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